Heterodimensional Device Technology

Our principal research is on novel heterodimensional devices for low power electronics applications. Heterodimensional devices utilize the interfaces between semiconductor regions of different dimensions, typically a three dimensional metal and a two dimensional electron gas channel. Examples of such devices include a 2D-Schottky diode, a Schottky Gated Resonant Tunneling Transistor, a 2D MESFET, and 2D JFET. The 2D Schottky diode demonstrated excellent performance linked to a high breakdown voltage, relatively large barrier height, and low series resistance (especially at cryogenic temperatures). The Resonant Tunneling Transistor exhibited a room temperature transconductance of 218 mS/mm, the highest yet reported for Schottky-gated RTTs. The 2D MESFET is an ultra-low power device which exhibited transconductances up to 295 mS/mm and 120 mS/mm at room temperature for 1.0 micron and 0.5 micron wide devices, respectively. The intrinsic transconductance for the 1.0 micron wide device was estimated to be 427 mS/mm (a record breaking performance for narrow devices). Using AIM-Spice, ring oscillator simulations based on measured device characteristics predict a power-delay product of less than 0.1 fJ, suggesting that these devices have tremendous potential for low power electronics applications.

Center for Integrated Electronics and Electronics Manufacturing (CIEE M)

Department of Electrical Computer and Systems Engineering at the Rensselaer Polytechnic Insitute.

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