Michael S. Shur

Rensselaer Polytechnic Institute, ECSE, CII 9017

Troy, New York 12180-3590

(518) 276-2201 (voice) (518) 276 2990 (fax) shurm@rpi.edu (e-mail) http://nina.ecse.rpi.edu/shur/

Our wide band gap research

Some other wide band gap web pages

Our wide band gap publications and subject index SiC technology and devices GaN/AlGaN photodetectors GaN, InN, and AlN parameters AlInGaN parameters Pyroelectric and Piezoelectric properties of GaN-based materials GaN/InN Transport Properties (see also Brian Foutz' home page) GaN. Where Electrons go ballistic AlGaN FET performance GaN HEMT MURI (with Cornell) GaN Compact Power Switches MURI (with NCSU) GaN MRS Fall 1998 tutorial

Materials Department at the University of California, Santa Barbara PhysTech-WBG Cree Research Inc. University of Michigan Solid State Group GaN and Related III-Nitrides at Cornell University Compound semiconductors Compound Semiconductor News MRS Internet Journal of Nitride Research

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