Table of Contents
SiC and Related Materials and Devices Michael Shur http://www.ecse.rpi.edu/shur/
Contact Information
Outline
Silicon (without carbon)
Compare with old economic wisdom
Roadmap for Si technology
Projected Technology Sophistication
Si versus SiC
Alexander Graham Bell (words on the wall at the entrance to Bell Labs)
Possible new applications
SiC - one of the first semiconductor materials to be discovered
Properties of SiC
Nitrides - friends and competitors
Wide band materials
Wide Band -> Strong Bond C and N are light
Wurtzite crystal structure
SiC Polytypes
3C-SiC and 4H-SiC
Other polytypes
Crystalline SiCN
High Drift Velocity
High Breakdown Field
Thermal Conductivity
Johnson's Figure of Merit
Keyes' Figure of Merit
Baliga Figure of Merit
Combined Figure of Merit for high frequency/high power
Combined Figures of Merit (Table)
Wide Band Gap Materials (Basic properties)
4H-SiC versus 6H-Sic
Other polytypes of interest
What is R?
Amorphous SiC:H
Bulk material growth
Seeded Sublimation Growth
Containless technique (Dmitriev et al)
Epitaxial growth
Dopants
Device Building Blocks
Substrates
Semi-insulating 4H-SiC substrates (from Cree Research, Inc.)
SiC Wafer Scale-up at Northrop Grumman
Microstructural Defects in 4H-SiC
Improvements in SiC Growth Lower Micropipe Density
Examples of SiC research in Japan
Future SiC projects in Japan
MITI 5 year National Program on Hard Electronics
Players (Universities and Gov. labs)
Players - Industrial Laboratories
The NEDO national project "R&D on Combustion Control (6-year MITI project roughly at $4M per year)
Epitaxial 4H-SiC layers (from CREE Research, Inc.)
Ohmic contacts
Schottky diodes
SiC Schottky Diode Design
Depletion width
On-resistance
On-resistance versus breakdown voltage
p-n diodes
Generation current (A) (per 1 µm3 of the depletion region volume) versus energy gap (at room temperature)
Typical performance of SiC p-n diodes
IMPATT structure and doping profile
IMPATT diode (principle of operation)
IMPATT current and voltage waveforms
SiC IMPATTs (expectations)
SiC (fabrication attempt)
Possible heterostructure systems (band offsets)
SiC MOS structures
SiC MOS formed by polysilicon oxidation of polycrystalline silicon
MOS Capacitance-voltage characteristics
SiC devices
SiC MOSFETs inversion and buried channel
SiC MOSFET I-Vs
SiC UMOSFET
SiC UMOSFET performance
SiC UMOSFET performance (Northrop Grumman)
SiC DIMOS
DIMOS Blocking Mode and Conduction Mode Characteristics
Northrop Grumman 4H-SiC DMOS blocking 900 V
SiC MESFET
Sanyo 6H-SiC MESFET
Sanyo 4H-SiC MESFET
Recent CREE announcement
Northrop Grumman MESFET
Denso Corporation 6H-SiC accumulation-mode trench MOSFET
Buried gate SiC JFET
Improved Field Uniformity
Lateral SiC JFET
Static Induction Transistor and Top gate SIT
300 Watts Output Power Achieved In Single SIT at S-Band at 2.9 GHz
Hitachi 4H-SiC SIT
Summary of Microwave Performance for wide band gap transistors
SiC NMOS binary counter
Operating Waveforms at room temperature
SiC NMOS half adder
SiC half adder waveforms at 304 oC
SiC Thyristor
Northrop Grumman Gate Turn-off Thyristors (GTOs)
SiC Thyristors
Nonvolatile RAM
Room temperature capacitance transients of charged SiC NVRAMs
Band diagrams below threshold
Piezoelectric Effect in GaN/AlGaN HFETs What about SiC?
Piezoelectric Properties of GaN
Potential applications
Importance of Energy Savings Green house effect!
Competition: GaN-based materials
AlGaN/GaN FET evolution
Mobility Versus Temperature in GaN HFETs on SiC
AlGaN/GaN on 6H-SiC Substrates
Backgating effects in AlGaN/GaN HFETs on 6H-SiC
SiC and GaN are Rapidly Re-Defining Microwave Power performance
Northrop Grumman 10GHz AlGaN MODFET Gives 2.66W/mm Output Power
Two dimensional device simulation
CAD Goals
Challenges in SiC FET modeling
Circuit simulation - AIM-Spice (http://www.aimspice.com)
AIM-Spice features
Additional AIM-Spice features
New Approach to FET Modeling
Unified charge control model (UCCM)
Universal drain current model
Advantages of universal drain current model
Effects included in the models
Parameter extraction
SiC MOSFET Parameters
NMOS characteristics
PMOS characteristics
Ring oscillators
SiC photodiode
SiC, Si, and GaN photodiodes
CREE latest device results (high power)
CREE latest device results (high frequency)
CREE latest device results (high temperature)
Devices poised for potential applications
Applications of High Temperature Electronics (examples)
Applications of power electronics devices (examples)
Applications and ratings
Application of microwave devices (examples)
References
Additional references
Conclusions
Acknowledgment
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