GaN-based BJTs and HBTs
Hole lifetime in GaN is ~ 7 ns. GaN/AlGaN thyristors might support up to 5 kV operating voltages with current densities of 200 A/cm2 and operate at frequencies exceeding 2 MHz, see
- Z. Z. Bandic, E. C. Piquette, P. M. Bridger, T. F. Kuech, and T. C. McGill, Design and Fabrication of Nitride Based High Power Devices, in Proceedings of Materials Research Society Conference, December 1997, Boston, MA
Pankove et al. reported on a new Heterojunction Bipolar Transistor that used a heterojunction between GaN and SiC. The transistor exhibited an extremely high gain of ten million at room temperature, decreasing to 100 at 535°C.
- High-Power High-Temperature Heterobipolar Transistor With Gallium Nitride Emitter, MRS Internet J. Nitride Semicond. Res. Vol. 1, 39 (1996).
UCSB first demonstration of an AlGaN/GaN HBT.
- U. Mishra, private communication; also, to be presented at International Workshop on Compound Semiconductors, Japan, October (1998)