Wide Band Gap Semiconductor Materials and Devices

Contact: Michael S. Shur

CII 9017 CIEEM

110-8th Street, Rensselaer Polytechnic Institute

Troy, New York 12180-3590

(518) 276 2201 (518) 276 2990 (fax)

E-mail: shurm@rpi.edu Home page: http://www.ecse.rpi.edu/shur/ 

 Subject Index

2-Dimensional Electron Gas, 20

AlGaN/GaN, 10, 11, 22, 23, 26, 27, 32, 35, 36, 48, 49, 60, 68, 69, 74, 75, 76, 77

AlGaN-GaN Heterostructures, 80

Breakdown Characteristics, 6, 86

Cyclotron Resonance, 44, 66

Deformation, 78

Detection of Microwave Radiation, 75

Doped Channel, 33, 34, 47, 48, 49, 65, 70, 76

Effective Mass, 44

Electron Mobility, 27, 61, 74, 75

Electronic Fluid, 75

Field Effect Transistors, 17, 22, 59

GaN Based Field Effect Transistors, 36, 38

GaN Diodes, 86

GaN/AlGaN, 12, 15, 17, 19, 28, 31, 33, 34, 47, 59, 65, 70, 81

GaN/AlN/GaN, 9

GaN-AlGaN, 20, 24, 37, 40, 44, 62, 66, 78, 87

GaN-AlN-GaN, 4, 5, 21, 79, 87

GaN-based field effect transistors, 18

GaN-InGaN Multiple Quantum Wells, 51

Gated Photodetector, 19

Hall Measurements, 31

Heterostructure Field Effect Transistor, 10, 15, 18, 19, 22, 23, 26, 28, 32, 33, 34, 47, 48, 49, 63, 65, 70, 76, 81, 90

Heterostructure Insulated Gate Field Effect Transistors, 11

High Power, 55, 70, 77, 81, 85

High Temperature Applications, 3, 8, 17, 50, 48, 68

impact ionization, 90

indium nitride, 83, 84

Indium Nitride, 73

Light Emitting Diodes, 43, 51, 58

Low frequency noise, 89

Microwave Operation, 33, 10, 65, 81

Monte Carlo Calculation, 2, 54, 82

Multiple Quantum Well, 58

High Field Electron Transport in GaN, 42, 88

Offset Gate, 69

Ohmic Contacts, 16, 31, 67

Optical phonon scattering, 13

Optoelectronic Devices, 12, 24, 35, 43, 60

Photodetectors, 59, 71

Piezoelectric effects, 7, 14, , 87

Piezoresistive Effect, 30, 79

Processing, 24, 46

Pyroelectric Effect, 45

Pyroelectricity, 52

Quantum Shift, 58

Semiconductor-Insulator-Semiconductor Structure, 4, 7, 5, 9, 21

SiC Devices, 16, 64

SiC Substrates, 68, 76, 80

SiC/AlN/SiC, 7

Silicon Carbide, 1, 3, 6, 8, 9, 16, 40

Silicon Carbide HJFET, 1

Stimulated Emission, 58

Strain, 4, 5, 9, 21, 25, 62

Substrate Bias, 76

Surface Reconstruction, 39

Ultraviolet Detectors, 53

Velocity overshoot, 83

Wide Band Gap Semiconductors, 12, 22, 29, 57

Zinc- Blende GaN, 39

 

 

 

Updated: 4/19/98

 

  1. P. Rabkin, M. Shur, and P. Blakey, DC and AC Analysis of a Silicon Carbide HJFET, Simulation Standard, vol. 3, No. 5, pp. 2-3, October (1992)

  2. B. Gelmont, K. Kim, and M. Shur, Monte Carlo Simulation of Electron Transport in Gallium Nitride, J. Appl. Phys., 74 (3), pp. 1818-1821, 1 August (1993)
  3. P. Rabkin, R. Cottle, M. Shur, and P. Blakey, The Forward and Reverse Characteristics of Silicon Carbide Diodes at High Temperatures, Simulation Standard, vol. 4, No. 3, pp. 6-7, May/June (1993)
  4. A. Bykhovski, B. Gelmont, and M. Shur, The Influence of the Strain-Induced Electric Field on the Charge Distribution in GaN-AlN-GaN Semiconductor-Insulator-Semiconductor Structure, J. Appl. Phys., vol. 74 (11), pp. 6734-6739 (1993)
  5. A. Bykhovski, B. Gelmont, and M. Shur, Strain and Charge Distribution in GaN-AlN-GaN Semiconductor-Insulator-Semiconductor Structure for Arbitrary Growth Orientation, Appl. Phys. Lett., vol. 63 (16), pp. 2243-2245 (1993)
  6. P. Rabkin, R. Cottle, P. A. Blakey, and M. S. Shur, 2D Simulation of DC, AC, and Breakdown Characteristics of Bipolar and Unipolar Silicon Carbide Devices, in Proceedings of International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 1-3, pp. 569-572 (1993)
  7. A. Bykhovski, B. Gelmont, M. S. Shur, and M. Spencer, Piezoelectric effects in SiC/AlN/SiC SIS Structures, in Proceedings of International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 1-3, pp. 581-584 (1993)
  8. M. Shur, B. Gelmont, C. Saavedra-Munoz, and G. Kelner, Potential of Wide Band Gap Semiconductor Devices for High Temperature Applications, Invited, in Proceedings of 5th Conference "Silicon Carbide and Related Compounds", Institute of Physics Conference Series Number 137, Institute of Physics Publishing, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman, Eds., Bristol and Philadelphia (1994), pp. 465-470
  9. A. Bykhovski, B. Gelmont, M. Shur, and A. Khan, Strain and Charge Distribution in GaN/AlN/GaN Semiconductor-Insulator-Semiconductor Structure, in Proceedings of 5th Conference "Silicon Carbide and Related Compounds, Institute of Physics Conference Series Number 137, Institute of Physics Publishing, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. A. Khan, R. Kaplan, and M. Rahman, Eds., Bristol and Philadelphia (1994), pp. 691-694
  10. M. A. Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm, and M. S. Shur, Microwave Performance of 0.25 micron gate AlGaN/GaN Heterostructure Field Effect Transistor, Applied Physics Letters, vol. 65 (9), pp. 1121-1123 (1994)
  11. M. A. Khan, Michael S. Shur, Q. C. Chen, and J. N. Kuznia, Current Voltage Characteristic Collapse in AlGaN/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias, Electronics Letters, vol. 30, No. 25, pp. 2175-22176, Dec. 8, 1994
  12. M. A. Khan, J. N. Kuznia, S. Krishnankutty, R. A. Scogman, D. T. Olson, W. J. Schaff, J. W. Burm, M. S. Shur, and T. George, Electronic and Optoelectronic Devices Based on GaN/AlGaN Heterostructures, MRS Proceedings, vol. 339, pp. 163-171, Diamond, SiC, Nitride Wide Band Gap Semiconductors, Editors C. H. Carter, G. Gildenblat, S. Nakamura, and R. Nemanich, MRS, Pittsburgh PA (1994)
  13. B. Gelmont, M. Shur, and M. Stroscio, Polar Optical phonon scattering in three- and two-dimensional electron gases, J. Appl. Phys., 77 (2), pp. 657-660, 15 Jan. (1995)
  14. A. Bykhovski, B. Gelmont, M. Shur, and A. Khan, Current-Voltage Characteristics of Strained Piezoelectric Structures, J. Appl. Phys., vol. 77(4), Feb. 15, pp. 1616-1620 (1995)
  15. M. A. Khan, M. S. Shur, J. N. Kuznia, J. Burm, W. Schaff, Temperature Activated Conductance in GaN/AlGaN Heterostructure Field Effect Transistors Operating at Temperatures up to 300 oC, Applied Physics Letters, 66,(9), pp. 1083-1085, 27 Feb. (1995)
  16. G. Kelner, M. S. Shur, and G. L. Harris, SiC Devices and Ohmic Contacts, chapter in "Properties of Silicon Carbide", G. Harris, Editor, pp. 231-273, INSPEC, IEE, United Kingdom, 1995
  17. M. S. Shur, A. Khan, B. Gelmont, R. J. Trew, and M. W. Shin, GaN/AlGaN Field Effect Transistors for High Temperature Applications, Inst. Phys. Conf. Ser. No 141: Chapter 4, pp. 419-424, (1995) Invited paper presented at Int. Symp. Compound Semicond., San Diego, CA, 18-22 Sept., 1994
  18. M. S. Shur and M. A. Khan, Optoelectronic GaN-based field effect transistors, in Optoelectronic Materials, Devices, and Integrated Circuits, Proc. SPIE 2397, Feb. 7 (1995) (Invited)
  19. M. A. Khan, M. S. Shur, Q. Chen, J. N. Kuznia, and C. J. Sun, Gated Photodetector Based on GaN/AlGaN Heterostructure Field Effect Transistor, Electronics Letters, vol. 31, No. 5, pp. 398-400, March 2, (1995)
  20. M. A. Khan, Q. Chen, C. J. Sun, M. Shur, and B. Gelmont, 2-Dimensional Electron Gas in GaN-AlGaN Heterostructures Deposited Using Trimethylamine-Alane as the Aluminum Source in Low Pressure Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett., vol. 67, No. 10, Sep. 4, pp. 1429-1431 (1995)
  21. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, Elastic Strain Relaxation in GaN-AlN-GaN Semiconductor-Insulator-Semiconductor Structures, J. Appl. Phys., 78 (6), pp. 3691-3696, 15 September (1995)
  22. M. S. Shur and M. A. Khan, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, in Proceeding of the Symposium on Wide Band Gap Semiconductors and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), F. Ren, D. N. Buckley, S. J. Pearton, P. Van Daele, G. C. Chi, T. Kamijoh, and F. Schuermeyer, Editors, Proceedings Volume 95-21, pp. 128-135, The Electrochemical Society, inc., New Jersey (1995), see also M. S. Shur and M. A. Khan, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, Abstract # 555, pp. 892-893, in Extended Abstracts, Vol. 95-2, Fall Meeting, Chicago, Illinois, Oct. 8-13, 1995, The Electrochemical Society, inc., New Jersey (1995)
  23. M. S. Shur and M. A. Khan, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, Abstract # 555, pp. 892-893, in Extended Abstracts, vol. 95-2, Fall Meeting, Chicago, Illinois, Oct. 8-13, 1995, The Electrochemical Society, inc., New Jersey (1995)
  24. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, I. Adesida, A. T. Ping, and M. S. Shur, Processing and characterization of GaN-AlGaN based electronic and optoelectronic devices, in Proceedings of International Semiconductor Device Research Symposium, vol. II, pp. 535-540, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995 (invited)
  25. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, Elastic Strain Relaxation in GaN-AlN Superlattices, in Proceedings of International Semiconductor Device Research Symposium, vol. II, pp. 541-544, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995
  26. M. A. Khan, M. S. Shur, and Q. Chen, High Transconductance AlGaN/GaN Optoelectronic Heterostructure Field Effect Transistor, Electronics Letters, vol. 31, No. 24, pp. 2130-2131, Nov. 23 (1995)
  27. M. Shur, B. Gelmont, and M. A. Khan, Electron Mobility in Two-Dimensional Electrons Gas in AlGaN/GaN Heterostructures and in Bulk GaN, J. Electronic Materials, vol. 25, No. 5, pp. 777-785 May (1996)
  28. M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. Blasingame, M. S. Shur, and H. Park, Enhancement and Depletion Mode GaN/AlGaN Heterostructure Field Effect Transistors, Appl. Phys. Lett., 68 (4), pp. 514-516, January 22 (1996)
  29. M. S. Shur, Wide Band Gap Semiconductors. Good Results and Great Expectations, pp. 279-290, in Proceedings of NATO Advanced Research Workshop, Ile de Bendor, France, July (1995), Future Trends in Microelectronics. Reflection on the Road to nanotechnology, edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky, NATO ASI series, Series E: Applied Sciences - vol. 323, Kluwer Academic Publishers, Dordrecht/ Boston/ Lisbon (1996)
  30. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, Piezoresistive Effect in Wurtzite n-type GaN, Appl. Phys. Lett., 68 (6), pp. 818-819 (1996)
  31. M. A. Khan, M. S. Shur, and Q. Chen, Hall Measurements and Contact Resistance in Doped GaN/AlGaN Heterostructures, Appl. Phys. Lett., vol. 68 (21), pp. 3022-3024, 20 May (1996)
  32. Q. Chen, M. A. Khan, J. W. Yang, C. J. Sun, M. S. Shur and H. Park, High Transconductance Heterostructure Field Effect Transistors Based on AlGaN/GaN, Appl. Phys. Lett., 69(6), pp. 794-796, Aug 5, 1996
  33. M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, B. T. Dermott and J. A. Higgins, Microwave Operation of GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors, IEEE Electron Device Letters, vol. 17, No. 7, pp. 325-327, July (1996)
  34. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Short Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors with 36.1 Cutoff Frequency, Electronics Letters, vol. 32, No. 4, pp. 357-358, Feb. 15 (1996)
  35. M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. S. Shur, Recent Progress in AlGaN/GaN Based Optoelectronic Devices, MRS Fall Meeting (1995), invited
  36. M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. S. Shur, Recent Progress in AlGaN/GaN Based Field Effect Transistors, MRS Fall Meeting (1995), invited
  37. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, and M. S. Shur, Optoelectronic and Electronic Devices Based on GaN-AlGaN Material System, in Proceedings of Topical Workshop on III-V Nitrides (TWN'95), 21-23 September 1995, Nagoya, Japan, IEEE Publication, I. Akasaki and K. Onabe, Editors, pp. 91-93
  38. M. Shur and A. Khan, GaN Based Field Effect Transistors, in "High Temperature Electronics", ed. M. Willander and H. L. Hartnagel, Chapman and Hall, pp. 297-321, London (1996)
  39. A. D. Bykhovski, and M. S. Shur. Surface Reconstruction of Zinc- Blende GaN, Appl. Phys. Lett., 69(16), pp. 2397-2399 (1996)
  40. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, M. S. Shur, Electronic devices based on GaN-AlGaN Material System, , Inst. Phys. Conf. Ser. No 142: Chapter 6, pp. 985-990, (1996) paper presented at Silicon Carbide and Related Materials Conf. 1995 , Kyoto, Japan
  41. M. S. Shur, W. C. B. Peatman, R. Tsai, F. Schuermeyer, and J. Xu, Heterodimensional Optoelectronic and Millimeter Wave Devices, in Proceeding of the 5th Biennial Department of Defense Photonics Conference, AFCEA, March, 1996, McLean, VA, pp. 285-288
  42. B. E. Foutz, L. F. Eastman, U. V. Bhapkar, M. S. Shur, Comparison of High Field Electron Transport in GaN and GaAs, Appl. Phys. Lett., 70, No 21, pp. 2849-2851, 1997
  43. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, B. Lim, M. Z. Anwar, M. Blasingame, M. S. Shur and H. Temkin, GaN-InGaN Based Optoelectronic Devices, in Proceedings of Workshop on Blue Light Emitting Diodes and Lasers, Chiba, Japan, March (1996)
  44. W. Knap, H. Alause, J. M. Bluet, J. Camassel, J. Young, M. A. Khan, Q. Chen, S. Huant, and M. Shur, The Cyclotron Resonance Effective Mass of Two-Dimensional Electrons Confined at the GaN-AlGaN Interface, Solid State Comm, 99, No. 3, 195-199 (1996)
  45. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, M. A. Khan, Pyroelectric Effect in Wurtzite Gallium Nitride, in Symposium Proceedings of Material Research Society, vol. 423, pp. 75-79 (1996)
  46. J. C. Zolper, R. J. Shul, A. G. Baca, S. J. Pearton, C. R. Abernathy, R. G. Wilson, R. A. Stall, and M. Shur, III- Nitride Ion Implantation and Device Processing, Electrochemical Society Proceedings, Spring 96, May 6-10, Los Angeles, CA
  47. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, CW Operation of Short Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors at 10 and 15 GHz, IEEE Electron Device Lett., vol. 17, No. 12, pp. 584-585, Dec. (1996)
  48. M. A. Khan, Q. Chen, J. W. Yang, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, High Temperature Performance of Doped Channel AlGaN/GaN Heterostructure Field Effect Transistors, in Proceedings of High Temperature Conference, Sandia, Albuquerque, NM, June (1996)
  49. M. S. Shur and M. A. Khan, AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors, Physica Scripta, vol. T69, pp. 103-107 (1997)
  50. M. A. Khan, and Michael S. Shur, GaN Based Transistors for High Temperature Applications, Materials Science and Engineering, B, Solid State Materials for Advanced Technology, 46/1-3 pp. 69-73 (1997)
  51. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, B. Lam, H. Temkin, J. Schetzina, and M. S. Shur, UV, Blue And Green Light Emitting Diodes Based On GaN-InGaN Multiple Quantum Wells Over Sapphire and (111) Spinel Substrates, Materials Science and Engineering, B43, pp. 265-268 (1997)
  52. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, M. A. Khan, Pyroelectricity in Gallium Nitride Thin Films, Applied Physics Letters, November 18, 69(21), p. 3254-3256 (1996)
  53. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, B. Lam, M. Z. Anwar, M. S. Shur, H. Temkin, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Visible Light Emitters, Ultraviolet Detectors, and High-Frequency Transistors Based on III-N Alloys, (Invited.) The Physics of Semiconductors ed. by M. Scheffler and R. Zimmermann, pp. 3171-3178 (World Scientific, Singapore 1996)
  54. U. V. Bhapkar, and M. S. Shur, Monte Carlo Calculation of Velocity-Field Characteristic of Wurtzite GaN, J. Appl. Phys., 82 (4), pp. 1649-1655, August 15 (1997)
  55. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, GaN Based Heterostructure for High Power Devices, Solid State Electronics, vol. 41, No. 10, pp. 1555-1559 (1997)
  56. M. A. Khan, Q. Chen, J. W. Yang, M. Z. Anwar, and M. Blasingame, M. S. Shur, J. Burm and L. F. Eastman, Recent Advances in III-V Nitride Electron Devices, IEDM-96 Technical Digest, Invited, December (1996)
  57. Michael S. Shur and M. A. Khan, Wide Band Gap Semiconductors. Good Results and Great Expectations., in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, Chapter 2, pp. 25-32, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997)
  58. C. J. Sun, M. Z. Anwar, Q. Chen, J. W. Yang and M. A. Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, M. Smith, J. T. Lin, and H. X. Xiang, Quantum Shift of Band Edge Stimulated Emission in InGaN-GaN Multiple Quantum Well Light Emitting Diodes, Appl. Phys. Lett., 70 (22), pp. 2978-2980, June 2 (1997)
  59. M. S. Shur and M. A. Khan, GaN/AlGaN Heterostructure Devices: Photodetectors and Field Effect Transistors, MRS Bulletin, vol. 22, No. 2, pp. 44-50, Feb. (1997)
  60. M. A. Khan and M. S. Shur, Recent Progress in AlGaN/GaN Based Optoelectronic Devices, in Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3006, Optoelectronics Integrated Circuits, Yoon-Soo Park and Ramu V. Ramaswamy, Editors, (1997), pp. 154-163
  61. B. L. Gelmont, M. S. Shur, and M. Stroscio, Analytical Theory of Electron Mobility and Drift Velocity in GaN, Mat. Res. Soc. Proc. Vol. 449, pp. 609-614 (1997)
  62. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, Elastic Strain Relaxation in GaN-AlN, GaN-AlGaN, and GaN-InGaN Superlattices, J. Appl. Phys., Vol. 81, No. 9, pp. 6332, May (1997)
  63. M. S. Shur, Q. Chen, J. W. Yang, R. Gaska, M. Blasingame, M. A. Khan, A. Ping, I. Idesida, V. P. Madangarli, and T. S. Sudarshan, High Pinch-off Voltage AlGaN-GaN Heterostructure Field Effect Transistor, Proceedings of ISDRS-97, pp. 377-380, Charlottesville, VA, Dec. (1997)
  64. Michael S. Shur, SiC Transistors, in "SiC Materials and Devices", ed. Y. S. Park, (1998), Academic Press, Semiconductors and Semimetals, vol. 52, pp. 161-193 (1998)
  65. Q. Chen, R. Gaska, M. A. Khan, M. S. Shur, A. Ping, I. Adesida, J. Burm, W. J.Schaff, and L. F. Eastman, Microwave Performance of 0.25 micron Doped Channel GaN/AlGaN Heterostructure Field Effect Transistor at Elevated Temperatures, Electronics Letters, vol. 33, No. 7, pp. 637-639, March 27 (1997)
  66. W. Knap, S. Contreras, H. Alause, C. Skiberbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. W. Yang, Q. Chen, M. A. Khan, M. Sadowski, S. Huant, F. J. W. Yang, M. Goiran, J. Leotin, and M. Shur, Cyclotron Resonance and Quantum Hall Effect Studies of the Two-Dimensional Electrons Confined at the GaN-AlGaN Interface, Appl. Phys. Lett., 70 (16), pp. 2123-2125, April (1997)
  67. J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, 0.12-µm Gate III-V Nitride HFET's with High Contact Resistances, IEEE Electron Device Letters, vol. 18, No. 4, pp. 141-143, April (1997)
  68. R. Gaska, Q. Chen, J. W. Yang, A. Osinsky, M. A. Khan, and M. S. Shur, High Temperature Performance of AlGaN/GaN HFETs on SiC Substrates, IEEE Electron Device Letters, vol. 18, No. 10, pp.492-494, October 1997
  69. R. Gaska, Q. Chen, J. W. Yang, A. Osinsky, M. A. Khan, M. S. Shur, A. Ping, and I. Adesida, AlGaN/GaN Heterostructure FETs with Offset Gate Design, Electronics Letters, 33, No. 14, pp. 1255-1257, 3 July (1997)
  70. Q. Chen, R. Gaska, M. A. Khan, M. S. Shur, G. J. Sullivan, A. L. Saylor, and J. A. Higgins, High Power Microwave 0.25 Micron Doped Channel GaN/AlGaN Heterostructure Field Effect Transistor, IEEE Electron Device Lett., Vol. 19, No. 2, pp. 44 - 46, Feb. (1998)
  71. M. S. Shur and M. A. Khan, GaN and AlGaN Ultraviolet Photodetectors, Academic Press, Semiconductors and Semimetals, T. Moustakos and J. Pankove, Editors (1998), to be published
  72. M. A. Khan and M. S. Shur, GaN-based Devices for Electronic Applications, in Proceedings of ESSDERC '97, September 1997, to be published
  73. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, Electron Transport in Wurtzite Indium Nitride, J. Appl. Phys., 83 (2), pp. 826-829, 15 Jan. (1998)
  74. R. Gaska, J. W. Yang, A. Osinsky, A. D. Bykhovski, and Michael S. Shur, Piezoeffect and Gate Current in AlGaN/GaN High Electron Mobility Transistors, Appl. Phys. Lett., Applied Physics Letters 71(25), pp. 3673-3675, December 22 (1997)
  75. J. Q. Lu, M. S. Shur, R. Weikle, and M. I. Dyakonov, and M. A. Khan, Detection of Microwave Radiation by Electronic Fluid in AlGaN/GaN High Electron Mobility Transistors, in Proceedings of Sixteenth Biennial Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, Aug. 4-6 (1997), pp. 211-217, IEEE ISBN Number 0-7803-3970-3
  76. R. Gaska, M. S. Shur, J. W. Yang, A. Osinsky, A. O. Orlov, and G. L. Snider, Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates, in Proceedings of the International Conference on SiC and Related Compounds, Sweden (1997)to be published
  77. R. Gaska, J. W. Yang, A. Osinsky, M. A. Khan, M. S. Shur, Novel High Power AlGaN/GaN HFETs on SiC substrates, IEDM-97 Technical Digest, pp. 565-568, December, 1997
  78. R. Gaska, J. W. Yang, A. D. Bykhovski, Michael S. Shur, V. V. Kaminski, and S. M. Soloviov, The Influence of the Deformation on the Two-Dimensional Electron Gas Density in GaN-AlGaN Heterostructures, Appl. Phys. Lett., vol. 72 (1), pp. 64-66, Jan. 5. (1998)
  79. R. Gaska, J. W. Yang, A. D. Bykhovski, Michael S. Shur, V. V. Kaminski, and S. M. Soloviov, Piezoresistive Effect in GaN-AlN-GaN Structures, Appl. Phys. Lett., vol. 71 (26), pp. 3817-3819 29 Dec. (1997)
  80. R. Gaska, J. W. Yang, A. Osinsky, Q. Chen and M. A. Khan, A. O. Orlov, G. L. Snider, and M. S. Shur, Electron Transport in AlGaN-GaN Heterostructures Grown on 6H-SiC Substrates, Appl. Phys. Lett., 72, No. 6, pp. 707-709, Feb. 1998
  81. J. Deng, B. Iniguez, M. S. Shur, Q. Chen, J. W. Yang, R. Gaska, M. A. Khan, and G. J. Sullivan, High Power 0.25 micron GaN/AlGaN Heterostructure Field Effect Transistor: A Microwave Performance Simulation, submitted for publication
  82. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, Monte Carlo Simulation of Electron Transport in Wurtzite Aluminum Nitride, Solid State Comm, Vol. 105, No. 10, pp. 621-626 (1998)
  83. B. E. Foutz, S. K. O'Leary, M. S. Shur, L. F. Eastman, and U. V. Bhapkar, Velocity overshoot and ballistic transport in indium nitride, in Symposium Proceedings of Material Research Society, (1998)
  84. S. K. O'Leary, B. E. Foutz, M. S. Shur, L. F. Eastman, and U. V. Bhapkar, Velocity field characteristics of indium nitride, in Symposium Proceedings of Material Research Society, (1998)
  85. M. S. Shur, GaN and related materials for high power applications, in Symposium Proceedings of Material Research Society, Symposium E, Fall 1997, to be published
  86. A. Osinsky, M. S. Shur, R. Gaska, and Q. Chen, Avalanche Breakdown and Breakdown Luminescence in p-p -n GaN Diodes, Electronics Letters, accepted for publication
  87. R. Gaska, A. D. Bykhovski, V. V. Kaminski, and S. M. Soloviev, M. S. Shur, Strong Piezoelectric Effects in GaN-AlN-GaN Heterostructures and GaN-AlGaN HEMTs, in Proceedings of the Second International Conference on Nitride Semiconductors - ICNS'97, Tokushima, Japan, October 27-31, 1997, p. 184
  88. B. L. Gelmont, M. S. Shur, and M. Stroscio, Two-Region Model of High Field Electron Transport in GaN, Proceedings of ISDRS-97, pp. 389-392, Charlottesville, VA, Dec. (1997)
  89. M.E. Levinshtein, F. Pascal, S. Contreras and W. Knap, S. L. Rumyantsev, R. Gaska, J.W. Yang, and M. S. Shur, Low frequency noise in GaN/GaAlN heterojunctions, Appl. Phys. Lett., submitted for publication
  90. N. V. Dyakonova, A. Dickens, M. S. Shur, R. Gaska, and J. W. Yang, Temperature dependence of impact ionization in AlGaN-GaN Heterostructure Field Effect Transistors, Applied Physics Letters, 015820, 05/18/98