"Handbook on Semiconductor Parameters: Vol. 1
Si, Ge, C (diamond),GaAs, GaP, GaSb, InAs, InP, InSb "
just published by World Scientific.
EXCERPTED FROM A REVIEW BY Dr. Zegrya of A. F. Ioffe Insttute of Science and Technology:
The Editors of "Handbook on Semiconductor Parameters" - Professors M. Levinshtein, and S. Rumyantsev from Ioffe Institute, Russia, and M. Shur from Rensselaer Polytechnic Institute, USA - compiled an exceptional handbook, which allows you to find a parameter value or a needed dependence literally in a few seconds. Every researcher knows how much time is usually takes to find even a fairly common parameter value in a typical handbook. Often several different values are given and it is all too typical that these values differ by 10% or more even tough their stated accuracy is in the third decimal point. This Handbook is very different. The Editors and authors selected and stated the most reliable values for each semiconductor parameter. The data are organized in the same logical way for each semiconductor material and include:
Basic Parameters at 300K
Band Structure and Carrier Concentration
Temperature Dependences
Dependence of the Energy Gap on Hydrostatic Pressure.
Energy Narrowing at High Doping Levels.
Effective Masses.
Donors and Acceptors
Electrical Properties
Mobility and Hall Effect
Transport Properties in High Electric Field
Impact Ionization
Recombination Parameters
Optical Properties
Thermal Properties
Mechanical Properties, Elastic Constants, Lattice Vibrations.
Other Properties.
References
The Handbook is very compact (218 pages) but it includes nearly all needed information. Also, it gives references where additional information can be found. If you believe that this
book may be useful for you , or your colleagues, and students you can order Handbook directly from World Scientific:
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Book Information:
" Handbook Series on Semiconductor Parameters vol. 1.: Si, Ge, C (diamond), GaAs, GaP, GaSb, InAs, InP, InSb."
ed. by M. E. Levinshtein, S. L. Rumyantsev, and M.S. Shur.
World Scientific, 1996, 218 p.p.
$ 78 hc. ISBN 981-02-2934-8