2. M. S. Shur, Dynamics of Crystals Having the KH2PO4 Structure, Soviet Phys. Solid State, vol. 8, No. 1, pp. 43-46 (1966)

3. M. S. Shur, Variation of Low-Frequency Vibrational Spectrum of KH2PO4 During Phase Transition, Soviet Phys. Solid State, vol. 8, No. 4, pp. 1008-1010 (1966)

4. M. S. Shur, Group-Theoretical Analysis and Basic Vectors of Normal Long-Wave Vibrations of Crystals Having KH2PO4 Structure above their Curie Point, Soviet Phys. Crystallography, vol. 11, No. 3, pp. 394-397 (1966)

5. E. V. Chisler and M. S. Shur, The Raman Spectrum of NaNO2 in the Ferroelectric Phase, Physica Status Solidi, vol. 17, No. 1, pp. 163-171 (1966)

6. E. V. Chisler and M. S. Shur, Raman Spectrum and Phase Transition in the Ferroelectric Crystal NaNO2, Physica Status Solidi, vol. 17, No. 1, pp. 173-176 (1966)

7. M. S. Shur, Translational Normal Vibrations of the Ferroelectric Crystal KH2PO4, Soviet Phys. Solid State, vol. 8, No. 8, pp. 2007-2008 (1967)

8. M. S. Shur, Theorem About Third Order Invariants for Irreducible Representations of Space Groups, Soviet Phys. JETP, vol. 24, No. 4, pp. 845-846 (1967)

9. M. S. Shur, Group-Theoretical Analysis and Basis Vectors of the Long Wavelength Normal Vibrations in Crystals with the KH2PO4 Structure below the Curie Point, Kristallographia, vol. 12, No. 2, p. 215-221 (1967) (in Russian). English translation in Sov. Phys. Crystallography, vol. 12, No. 2, pp. 181-185 (1967)

10. M. S. Shur, Projection Operators for the Irreducible Representations of Space Groups, Kristallographia, vol. 12, No. 6, pp. 981-988, 1967 (in Russian). English translation in Sov. Phys. Crystallography, vol. 12, No. 6, pp. 857-862 (1967)

11. E. V. Chisler, M. S. Shur, Study of Ferroelectric Transition in NaNO2 Using Raman Scattering Spectrum in the Region of NO2 Anion Vibrations, Soviet Phys. Solid State, vol. 9, No. 4, pp. 796-799 (1967)

12. M. S. Shur, Vibrational Spectrum of Ferroelectric Crystal KH2PO4, Isvestiya AN, ser. fiz., vol. 31, No. 7, pp. 1042-1046 (1967) (in Russian). English translation in Bull. Acad. Sci. USSR Phys. Ser., vol. 31, No. 7, pp. 1059-1063 (1967)

13. E. V. Chisler, M. S. Shur, Ferroelectric Transition Study in NaNO2 by Raman Spectrum, Isvestiya AN, ser. fiz., vol. 31, No. 7, pp. 1098-1103 (1967) (in Russian). English translation in Bull. Acad. Sci. USSR Phys. Ser., vol. 31, No. 7, pp. 1116-1121 (1967)

14. E. V. Chisler, M. S. Shur, Method of Group-Theoretical Analysis of Limiting Dipole Optical Vibrations of Ionic Crystals, Isvestiya SO AN USSR, ser. phys., vol. 4, No. 9, pp. 69-71 (1967) (in Russian).

15. M. S. Shur, Group Theory Application Analysis and Calculation of Vibrational Spectra of Crystals, Kandidat Dissertation (Ph.D. Thesis), (in Russian), A. F. Ioffe Phys. Tech. Institute of Acad. of Sci. of USSR, Leningrad (1967)

16. M. E. Levinshtein and M. S. Shur, Calculation of the Parameters of Microwave Gunn Generator, Electronics Lett., vol. 4, No. 11, pp. 233-235 (1968)

17. M. S. Shur, Possibility of Instability in Ferroelectric Crystals Having Semi-conducting Properties, Soviet Phys. Solid State, vol. 10, No. 9, pp. 2087-2091 (1968)

18. M. Levinshtein and M. S. Shur, Behavior of the High Field Domains Below the voltage of the Nucleation Threshold, Phys. Status Solidi, 28, pp. 827-834 (1968)

19. D. P. Dizhur, M. E. Levinshtein, D. N. Nasledov and M. S. Shur, Computer Model of the Gunn Diode, Proc. of MOGA-68, Hamburg, pp. 436-442 (1968)

20. D. P. Dizhur, M. E. Levinshtein and M. S. Shur, Computer Calculations of the Efficiency of the Gunn Generator, Electronics Letters, vol. 4, No. 21, pp. 444-446 (1968)

21. N. A. Gorunova, L. B. Zlatkin, Y. F. Markov, A. I. Stekhanov and M. S. Shur, Infrared Reflectivity Spectra and Optical Constants of ZnSnP2 Crystals in the Chalkopyrite and Sphalerite Structure, Soviet Phys. Solid State, vol. 10, No. 7, pp. 1782-1783 (1969)

22. M. S. Shur, Y. N. Tsarev, Vibrational Spectra of Crystals Having the Rutile Structure and Non-Analytical Behavior of the Limiting Dipole Frequencies, Soviet Phys. Solid State, vol. 10, No. 10, pp. 2293-2298 (1969)

23. M. S. Shur, Strong-Field Domain Parameter Change Times during Small Displacement Field Changes, Sov. Phys. Solid State, vol. 10, No. 10, pp. 2479-2480 (1969)

24. M. S. Shur, Theory of Electric Induction Waves in Ferroelectric Semiconductor Crystals, Sov. Phys. Solid State, vol. 10, No. 12, pp. 2827-2831 (1969)

25. M. S. Shur, Types of Electric Induction Waves in Ferroelectric Semiconductors with a First Order Phase Transition at Temperatures above the Transition Temperature, Sov. Phys. Solid State, vol. 10, No. 12, pp. 2925-2927 (1969)

26. M. S. Shur, Theory of Electric Induction Waves in Semiconducting Ferroelectric Crystals, Bull. Acad. Sci. USSR Phys. Ser., vol. 33, No. 2, pp. 187-191 (1969)

27. L. B. Zlatkin, Y. F. Markov, A. I. Stekhanov and M. S. Shur, Reflection and Optical Constants of ZnSnP2 Crystals with Chalkopyrite and Sphalerite Structure, Phys. Status Solidi, 32, No. 2, pp. 473-479 (1969)

28. M. E. Levinshtein and M. S. Shur, Current Stabilizer on Gunn Diode, Fiz. Tekh. Poluprov., 3, No. 7, pp. 1085-1087 (1969) (in Russian). English translation in Soviet Phys. Semicond., 3, No. 7 (1969)

29. A. I. Kazakov and M. S. Shur, Possibility of Modulation of Gunn Oscillations by an Ultrasound Wave, Fiz. Tekh. Poluprov., 3, No. 7, pp. 1250-1263 (1969) (in Russian). English Translation in Soviet Phys. Semicond., 3, No. 8, pp. 1047-1048 (1969)

30. A. I. Kazakov and M. S. Shur, Modulation of Gunn Generation by Ultrasound Wave in New Piezo and Ferroelectric Materials, MDNTP, M, pp. 236-238 (1969)

31. M. E. Levinshtein, D. N. Nasledov, and M. S. Shur, Magnetic Field Influence on the Gunn Effect, Phys. Status Solidi, 33, No. 2, pp. 897-903 (1969)

32. M. S. Shur, New Spontaneous Oscillations in a Gunn Diode, Associated with Non-Equilibrium Carrier Generation, Fiz. Tech. Poluprov., 3, No. 10, pp. 1465-1469 (1969) (in Russian). English translation in Sov. Phys. Semicond., 3, No. 10, pp. 1230-1233 (1970)

33. M. S. Shur, The Effect of the Shift of the Absorption Edge by Electric Field in Degenerate Semiconductors, Phys. Lett., 29A, No. 9, 490 (1969)

34. M. S. Shur, New Mechanism of Domain Instability in Ferroelectric Semiconductors, Sov. Phys. Solid State, 11, No. 9, pp. 2023-2027 (1969)

35. M. S. Shur, Semiconducting Properties of Ferroelectrics, Vestnik AN SSSR, No. 9, p. 119 (1969)

36. M. E. Levinshtein and M. S. Shur, Simple Analytical Theory of High Field Domain Behavior in GaAs Gunn Diode, Proc. of all Union Conference on GaAs, Tomsk (1969)

37. L. B. Zlatkin, Y. F. Markov, A. I. Stekhanov and M. S. Shur, The Investigation of the Vibrational Spectrum, Optical Constants and Ionicity of the Bond of CdGeAs2 in Crystal and Amorphous Phases, J. Phys. Chem. Sol., vol. 31, pp. 567-571 (1970)

38. G. A. Smolenskii, V. A. Bokov, V. F. Isupov, N. E. Krainik, R. E. Pasinkov, and M. S. Shur, Ferroelectrics and Antiferroelectrics, Publishing House Nauka, Moscow-Leningrad (1970) (in Russian).

39. B. L. Gelmont, Y. A. Goldberg, M. E. Levinshtein, T. V. L'vova, D. M. Nasledov, and M. S. Shur, Magnetic Field Influence on the Gunn Effect, in Proc. of 2nd Republican Conference on General and Applied Physics, Alma Ata (1970)

40. B. L. Gelmont and M. S. Shur, Influence of Internal Magnetic Field on the Gunn Effect, Sov. Phys. Semicond., 4, No. 4, pp. 611-613 (1970)

41. A. I. Gubanov and M. S. Shur, Anomalies in the Electrical Conductivity of a Ferroelectric Semiconductor near the Curie Point, Sov. Phys. Solid State, vol. 12, No. 2, pp. 517-518 (1970)

42. N. A. Guschina and M. S. Shur, Generation of Ultrasound in Gunn Diodes, Sov. Phys. Semicond., vol. 4, No. 6, pp. 922-926 (1970)

43. M. E. Levinshtein, T. V. L'vova, D. N. Nasledov and M. S. Shur, Magnetic Field Influence on the Gunn Effect II, physica status solidi A, vol. 1, pp. 177-187 (1970)

44. M. E. Levinshtein and M. S. Shur, Current Stabilizer, Soviet Patent No. 267706, Bulletin of Inventions & Discoveries, No. 13 (1970) (in Russian).

45. B. L. Gelmont and M. S. Shur, S-Shaped Current-voltage Characteristics and Pinching of Current in Gunn Diodes, Sov. Phys., JETP Lett., vol. 11, No. 7, pp. 223-226 (1970)

46. B. L. Gelmont and M. S. Shur, S-Type Current-voltage Characteristic in Highly Doped Gunn Diodes, Sov. Phys. Solid State, vol. 12, No. 6, pp. 1304-1308 (1970)

47. M. S. Shur, Influence of Field-Dependent Trapping on the Gunn Effect, Fiz. Tekh. Poluprov., vol. 4, No. 6, pp. 1202-1204 (1970) (in Russian). English translation in Soviet Phys. Semicond., vol. 4, No. 6, pp. 1202-1204 (1970)

48. B. L. Gelmont and M. S. Shur, Analytical Theory of the Stable Domains in High Doped Gunn Diodes, Electronics Lett., vol. 6, No. 12, pp. 385-387 (1970)

49. A. A. Kastalskii, E. J. Leonov, and M. S. Shur, Gunn Devices with Variable Energy Gap, Fiz. Tekh. Poluprov., vol. 4, No. 9, pp. 1609-1611 (1970) (in Russian).

50. B. L. Gelmont and M. S. Shur, Plasma Wave Instability in the Conditions of the Intervalley Transition, Phys. Lett., vol. 32A, No. 7, pp. 552-553 (1970)

51. B. L. Gelmont and M. S. Shur, S-Type Current-voltage Characteristics and Recombination Emission in Gunn Diodes, Elec. Lett., vol. 6, No. 16, pp. 531-532 (1970)

52. M. E. Levinshtein and M. S. Shur, Gunn Effect Devices I, (Review), Zarubezhnaya Radioelectronika, No. 9, p. 58 (1970) (in Russian).

53. M. E. Levinshtein and M. S. Shur, Gunn Effect Devices, II (Review), Zarubezhnaya Radioelectronika, No. 11, p. 50 (1970) (in Russian).

54. M. S. Shur, The Influence of the Field-Dependent Trapping on the Gunn Effect, in Proc. 8th Int. Conf. MOGA-1970, Amsterdam, pp. 9-16 (1970)

55. N. A. Guschina and M. S. Shur, Ultrasound Generation in the Gunn Diode, in Proc. 8th Inter. Conf. MOGA-1970, Amsterdam, pp. 9-18 (1970)

56. M. E. Levinshtein and M. S. Shur, The Investigation of the Gunn Diode Operation in a Resonator Using a Computer Model, in Proc. 8th Inter. Conf. MOGA-1970, Amsterdam, pp. 20-33 (1970)

57. B. L. Gelmont and M. S. Shur, S-Type Current-voltage Characteristics, Current Filament Formation and Stimulated Emission in High Doped Gunn Diodes, in Proc. 8th Inter. Conf., MOGA-1970, Amsterdam, pp. 9-37 (1970)

58. I. V. Grekhov, M. E. Levinshtein, and M. S. Shur, Gunn Diodes, Soviet Patent No. 367815, (21.12.1970), Bulletin of Inventions and Discoveries

59. I. V. Grekhov, M. E. Levinshtein, and M. S. Shur, Light Modulator, Soviet Patent No. 398153, (16.11.1970), Bulletin of Inventions and Discoveries

60. B. L. Gelmont and M. S. Shur, Current Filamentation in Heavily Doped Gunn Diodes, Sov. Phys. Semicond., vol. 4, No. 9, pp. 1419-1923 (1971)

61. B. L. Gelmont and M. S. Shur, Motion of a Current Filament in a Magnetic Field Under Gunn Effect Conditions, Sov. Phys. Semicond., vol. 4, No. 9, pp. 1540-1542 (1971)

62. K. V. Kuznetsov, M. E. Levinshtein, and M. S. Shur, The Investigation of the Gunn Diode Operation in a Resonator Using the Computer Model, Solid State Electronics, vol. 14, pp. 207-220 (1971)

63. M. S. Shur, Gunn Effect, Publishing House ENERGY, Moscow, Leningrad (1971) (in Russian).

64. L. B. Zlatkin, Y. F. Markov, V. M. Orlov, V. I. Sokolova, and M. S. Shur, Reflection and Absorption of CdSnP2 Crystals in Infra-Red Region, Sov. Phys. Semicond., vol. 4, No. 7, pp. 1181-1183 (1971)

65. B. L. Gelmont and M. S. Shur, Mechanism of the Relaxation Oscillations Due to Impact Ionization in Gunn Diodes, Phys. Lett., vol. 34A, No. 2, pp. 113-114 (1971)

66. B. L. Gelmont and M. S. Shur, High-Field Domains in Gunn Diodes with Two Types of Carriers, Sov. Phys., JETP, vol. 33, No. 6, pp. 1234-1239 (1971)

67. B. L. Gelmont and M. S. Shur, Quasineutral Wave Instability in a Semiconductor with Two Types of Carriers, Sov. Phys. Semicond., vol. 5, No. 6, pp. 955-958 (1971)

68. B. L. Gelmont and M. S. Shur, High-Field Domains in the Presence of Electron-Hole Pairs, Phys. Lett., vol. 36A, No. 4, pp. 305-307 (1971)

69. I. V. Grekhov, A. M. Kolchin, M. E. Levinshtein, and M. S. Shur, Edge Electro-Optical Effect, Sov. Phys. Semicond., vol. 5, No. 11, pp. 1933-1935 (1971)

70. B. L. Gelmont and M. S. Shur, The Instability of Quasineutral Waves in a Semiconductor with Two Kinds of Carriers, Phys. Lett., vol. 35A, No. 5, pp. 353-354 (1971)

71. B. L. Gelmont, K. D. Tsendin, and M. S. Shur, Instability of Quasineutral Waves in the Case of Field-Dependent Electron Density, Sov. Phys. Semicond., vol. 5, No. 11, pp. 1890-1893 (1972)

72. M. E. Levinshtein and M. S. Shur, Gunn Effect (Review), Sov. Phys. Semicond., vol. 5, No. 9, pp. 1561-1587 (1972)

73. B. L. Gelmont and M. S. Shur, Analytical Theory of Recombination Domains, Sov. Phys. Semicond., vol. 5, No. 11, pp. 1841-1849 (1972)

74. B. L. Gelmont and M. S. Shur, Recombination Domains of Strong-Field in Semiconductors with Two Types of Carriers, Sov. Phys., JETP, vol. 61, No. 6, pp. 1295-1299 (1972)

75. B. L. Gelmont and M. S. Shur, Analytical Theory of the High-Field Domains in the Presence of Trapping, Phys. Lett., vol. 38A, No. 7, pp. 503-505 (1972)

76. M. E. Levinshtein, L. S. Pushkaroeva, and M. S. Shur, Influence of the Second Harmonic of a Resonator on the Parameters of a Gunn Generator for Transit and Hybrid Modes, Electronics. Lett., vol. 8, No. 2, pp. 31-33 (1972)

77. B. L. Gelmont and M. S. Shur, Hole Influence on the Gunn Effect, in Proceedings of the Symposium on Plasma Physics and Electrical Instabilities in Solids, Publishing House Mintis, Vilnius, pp. 258-261 (1972)

78. B. I. Shklovskii, M. S. Shur, and A. L. Efros, S-Type Current-voltage Characteristic in Compensated Semiconductors, Sov. Phys. Semicond., vol. 5, No. 10, pp. 1682-1685 (1972)

79. M. E. Levinshtein, S. M. Ryvkin, and M. S. Shur, Microwave Hot Electron Generators, Novye knigi za rubezhom (1972) (in Russian).

80. M. E. Levinshtein, L. S. Pushkaroeva, and M. S. Shur, Influence of the Second Harmonic of a Resonator on the Parameters of Gunn Generator for Transit and Hybrid Modes, VINITI No. 4877-72, abstract in Radiotekhnika i Elektronika, vol. 18, No. 3, p.667 (in Russian) (1972) English translation of the abstract in Radioengineering and Electronic Physics, vol. 18, No. 3 (1972)

81. B. L. Gelmont and M. S. Shur, S-Type Current-voltage Characteristics in Gunn Diodes with Deep Centers (Theory), Sov. Phys. Semicond., vol. 7, No. 1, pp. 50-54 (1973)

82. B. L. Gelmont and M. S. Shur, S-Type Current-voltage Characteristics in Gunn Diodes with Deep Centers, Comparison of the Theory and Experiment, Sov. Phys. Semicond., vol. 7, No. 3, pp. 377-379 (1973)

83. B. L. Gelmont and M. S. Shur, Characteristic Coherence Time of Gunn Oscillations under Impact Ionization Conditions, Sov. Phys. Semicond., vol. 7, No. 3, pp. 326-331 (1973)

84. B. L. Gelmont and M. S. Shur, S-Type Current-voltage Characteristics in Gunn Diodes, J. Phys. D., vol. 6, pp. 842-850 (1973)

85. M. S. Shur, Analytical Theory of Gunn Domain Dynamics, Sov. Phys. Semicond., vol. 7, No. 6, pp. 791-794 (1973)

86. M. E. Levinshtein and M. S. Shur, Contact and Inhomogeneities Influence on Gunn Effect (Review), Zarubezhnaya Radioelectronika, No. 5, pp. 88-114 (1973) (in Russian).

87. B. L. Gelmont and M. S. Shur, Method to Govern Gunn Diode Parameters, Soviet Patent No. 379968, Bulletin of Inventions and Discoveries, No. 20 (1973) (in Russian)

88. M. S. Shur, Possibility of Stimulated Emission of Light from a TRAPATT Diode, Sov. Phys. Semicond., vol. 8, No. 5, pp. 554-555 (1974)

89. M. E. Levinshtein and M. S. Shur, Influence of External Conditions on the Gunn Effect (Review), Zarubezhnaya Radioelectronika, No. 1 (1974) (in Russian).

90. M. E. Levinshtein and M. S. Shur, Some Parameters Characterizing Gunn Diode as Element for Logic Circuits, Radiotekhnika i Elektronika, vol. 19, No. 6, pp. 1310-1312 (1974) (in Russian). English translation in Radioengineering and Electronic Physics, vol. 19, No. 6 (1974)

91. M. E. Levinshtein and M. S. Shur, Simple Criterion of Determination of Operating Modes of Gunn Generator, Radiotekhnika i Elektronika, vol. 19, No. 7, pp. 1554-1556 (1974) (in Russian). English translation in Radioengineering and Electronic Physics, vol. 19, No. 7 (1974)

92. M. E. Levinshtein and M. S. Shur, Transient Characteristics of Gunn Diodes, in Proceedings of All Union Symposium on Microwave Generation by Gunn Diodes, Novosibirsk (1974), pp. 53-62, (in Russian)

93. B. L. Gelmont and M. S. Shur, Slow Domains in Gunn Diodes with Two Types of Carriers, in Proceedings of All Union Symposium on Microwave Generation by Gunn Diodes, Novosibirsk (1974), pp. 63-72, (in Russian)

94. B. L. Gelmont and M. S. Shur, Slow High-Field Domains in Gunn Diodes with Two Types of Carriers, J. Phys. D, vol. 7, pp. 1279-1286 (1974)

95. B. L. Gelmont and M. S. Shur, Motion of Current Filaments in Transverse Electric and Magnetic Fields, Sov. Phys. Semicond., vol. 7, No. 10, pp. 1311-1314 (1974)

96. B. L. Gelmont and M. S. Shur, Method of Microwave Amplification, Soviet Patent No. 422065, Bulletin of Inventions and Discoveries, No. 12 (1974) (in Russian)

97. M. E. Levinshtein and M. S. Shur, Logic, Functional and Optoelectronic Gunn Devices (Review) Zarubezhnaya Radiotekhnika, No. 11, pp. 18-31 (1974) (in Russian).

98. M. E. Levinshtein and M. S. Shur, Technology and Design of Gunn Diodes (Review) Zarubezhnaya Radiotekhnika, No. 12, pp. 62-78 (1974) (in Russian).

99. M. E. Levinshtein, Yu. K. Pozhela, and M. S. Shur, Gunn Effect, Soviet Radio, Moscow (1975) (in Russian)

100. M. E. Levinshtein and M. S. Shur, Physical Investigations of the Gunn Effect (Review), Sov. Phys. Semicond., vol. 9, No. 4, pp. 411-428 (1975)

101. B. L. Gelmont, R. F. Kazarinov, R. A. Suris, and M. S. Shur, Slow Gunn Domains in Compensated Semiconductors, J. Phys. D, vol. 8, pp. 530-534 (1975)

102. M. E. Levinshtein and M. S. Shur, Transient Properties of Gunn Diodes, Solid State Electronics, vol. 18, pp. 983-990 (1975)

103. M. E. Levinshtein, B. I. Shklovskii, M. S. Shur, and A. L. Efros, The Relation Between Critical Exponents of Percolation Theory, Sov. Phys. JETP, vol. 42, No. 1, pp. 197-200, July (1975)

104. M. E. Levinshtein, M. S. Shur, and A. L. Efros, Galvanomagnetic Phenomena in Disordered Systems Theory and Simulation, Sov. Phys. JETP, vol. 42, No. 6, pp. 1120-1124, Dec. (1975)

105. M. S. Shur, Hot Electron Mobility in Magnetic Field, Sov. Phys. Semicond., vol. 10, No. 1, pp. 88-90, January (1976)

106. M. S. Shur, Hot Electron Waves in Transverse Magnetic Field, Sov. Phys. Semicond., vol. 10, No. 1, pp. 69-72, January (1976)

107. M. E. Levinshtein and M. S. Shur, Comparison of Failure Mechanisms for Gunn Diodes Radiotekhnika i Elektronika, vol. 21, No. 3, pp. 582-588 (in Russian). English translation in Radio Engineering and Electronic Physics, vol. 21, No. 3, pp. 106-112, March (1976)

108. V. E. Dubrov, M. E. Levinshtein, and M. S. Shur, Anomaly of Dielectric Constant at Metal-insulator Transition. Theory and Modeling, JETP, vol. 70, No. 5, pp. 2014-2023 (1976) (in Russian), English translation in Sov. Phys, JETP, vol. 70, No. 5 (1976)

109. M. S. Shur, Critical Exponents Describing Divergence of the Correlation Radius in Percolation Problems, J. Phys. C., vol. 9, pp. L229-L230 (1976)

110. M. S. Shur, Influence of Non-Uniform Field Distribution in the Channel on the Frequency Performance of GaAs FETs, Electronics Letters, 12, No. 23, pp. 615-616 (1976)

111. M. S. Shur, Turnover of Current-voltage Characteristic in High Magnetic Field Due to Geometrical Magnetoresistance, Proc. of 13th Inter. Conf. on Phys. of Semicond., Rome, pp. 1145-1148 (1977)

112. K. Subhani, M. S. Shur, M. P. Shaw, and D. Adler, The Mechanism for Switching in Thin Chalcogenide-based Amorphous Films, Proc. of the 7th Inter. Conf. on Amorphous and Liquid Semiconductors, Edinburgh, Scotland, Ed. by W. E. Spear (1977), p. 712

113. M. S. Shur, Geometrical Magnetoresistance and Negative Differential Mobility in Semiconductor Devices, Solid State Electronics, vol. 20, No. 1, pp. 389-401, January (1978)

114. W. Czubatyj, M. S. Shur, and M. P. Shaw, Transferred Electron Effects in n-GaAs and n-InP Under Hydrostatic Pressures, Solid State Electronics, vol. 21, No. 1, pp. 75-78, January (1978)

115. L. F. Eastman and M. S. Shur, Frequency Limitations of Transferred Electron Devices Related to Quality of Contacts, Solid State Electronics, vol. 21, No. 5, pp. 787-791, March (1978)

116. M. S. Shur and L. F. Eastman, Current-voltage Characteristics, Small-Signal Parameters and Switching Times of GaAs FETs, IEEE Trans. on Electron Devices, vol. ED-25, No. 6, pp. 606-611, June (1978)

117. M. S. Shur, Analytical Model of GaAs MESFET, IEEE Trans. on Electron. Devices, vol. ED-25, No. 6, pp. 612-618, June (1978)

118. M. S. Shur, Maximum Electric Field in High-Field Domain, Electronics Letters, vol. 14, No. 16, pp. 521-522, August (1978)

119. M. S. Shur and L. F. Eastman, Surface Oriented Transferred Electron Devices, IEEE Trans. on Microwave Theory and Tech., vol. MTT-26, No. 12, pp. 1023-1028, December (1978)

120. M. S. Shur and L. F. Eastman, Current-voltage Characteristics, Small-Signal Parameters, Switching Times and Power Delay Products of GaAs MESFET's, 1978 IEEE MTT-S International Microwave Symposium Digest, p.150-152

121. M. S. Shur and L. F. Eastman, Surface-Oriented Transferred-Electron Devices, 1978 IEEE International Microwave Symposium Digest, pp. 375-377 (1978)

122. M. S. Shur, L. F. Eastman, S. Judraprawiva, J. Gammel, and S. Tiwari, Design Criteria for GaAs MESFET's Related to Stationary High Field Domains, IEDM Digest, pp. 381-384, Washington, December (1978)

123. M. S. Shur, Small-Signal Nonlinear Circuit Model of GaAs MESFET, Solid State Electronics, vol. 22, No. 8, pp. 723-728, August (1979)

124. M. S. Shur and L. F. Eastman, Ballistic Transport in Semiconductors at Low-Temperatures for Low Power High Speed Logic, IEEE Transactions Electron Devices, vol. ED-26, No. 11, pp. 1677-1683, November (1979)

125. L. F. Eastman and M. S. Shur, Substrate Current in GaAs MESFET's, IEEE Transactions Electron Devices, vol. ED-26, No. 9, pp. 1359-61, September (1979)

126. M. S. Shur and L. F. Eastman, Near Ballistic Transport in GaAs at 77`K, Proceedings of Seventh Biennial Cornell Conference. Active Microwave Devices and Circuits, August (1979), Ithaca, pp. 389-400

127. M. S. Shur, Analytical Model of GaAs MESFET's, IEEE Conference Record, Third Biennial University/Industry/Government Microelectronics Symposium, pp. 34-39, Lubbock, TX, May (1979)

128. L. F. Eastman, S. Tiwari, and M. S. Shur, Design Criteria for GaAs MESFET's Related to Stationary High Field Domains, Solid State Electronics, vol. 23, pp. 383-389, April (1980)

129. M. S. Shur, W. Czubatyj, and A. Madan, Determination of Depletion Width in Amorphous Materials using a Simple Analytical Model, Solar Cell Materials, 2, pp. 349-361 (1980)

130. M. S. Shur, W. Czubatyj and A. Madan, Schottky Barrier Profiles in a-Si Based Materials, J. Non-Cryst. Solids, vol. 35-36, Part 2, pp. 731-736, January/February (1980)

131. M. S. Shur and L. F. Eastman, I-V Characteristics on GaAs MESFET with Non-Uniform Doping Profile, IEEE Trans. Electron Devices, vol. ED-27, No. 2, pp. 455-461, February (1980)

132. A. Madan, S. R. Ovshinsky, W. Czubatyj and M. S. Shur, Some Electrical and Optical Properties of a-Si-F:H Alloys, Electronic Materials, vol. 9, No. 2, pp. 385-407, March (1980)

133. D. Adler, M. S. Shur, M. Silver and S. R. Ovshinsky, Threshold Switching in Chalcogenide Glass Thin Films, J. Appl. Phys. vol. 56, No. 6, pp. 3289-3309, June (1980)

134. W. Czubatyj, M. S. Shur, K. Ng, and A. Madan, Photovoltaic Behavior of Amorphous Silicon-Based Alloys, in Proc. of XIV IEEE Photovoltaic Conference, pp. 1214-1217, San Diego, CA, January (1980)

135. M. S. Shur and L. F. Eastman, Ballistic and Near Ballistic Transport in GaAs, IEEE Electron Device Letters, vol. EDL-1, No. 8, pp. 147-148, August (1980)

136. M. S. Shur, Ballistic and Collision Dominant Transport in a Short Semiconductor Diode, Proceedings of IEDM, pp. 618-621, Washington, DC (1980)

137. M. Hollis, N. Dandekar, L. F. Eastman, M. S. Shur, D. Woodard, R. Stall, and C. Wood, Transverse Magnetoresistance in GaAs Two-Terminal Device: A Characterization of Electron Transport in the Near Ballistic Regime, Proceedings of IEDM, pp. 622-625, Washington, DC (1980)

138. M. S. Shur, A. Madan, and W. Czubatyj, Experimental and Theoretical Study of High-Efficiency MIS Solar Cells, IEDM Technical Digest, pp. 545-548 (1980)

139. M. S. Shur and L. F. Eastman, GaAs n+-p-n+ Ballistic Structure, Electronics Letters, vol. 16, No. 1, pp. 522-523, June (1980)

140. L. F. Eastman, R. Stall, D. Woodard, M. S. Shur, and K. Board, Ballistic Electron Motion in GaAs at Room Temperature, Electronics Letters, vol. 16, No. 13, p.524, June (1980)

141. A. Madan, J. McGill, S. R. Ovshinsky, W. Czubatyj, J. Yang, and M. S. Shur, Effect of an Interfacial Oxide in Amorphous Si:F:H Alloy Based M-I-S Devices, in Proceedings of SPIE 24th International Symposium, San Diego, California, July (1980), vol. 248, pp. 26-29

142. M. S. Shur, W. Czubatyj, and A. Madan, Determination of Depletion Width in Amorphous Materials Using a Simple Analytical Model, Sol. Energy Materials, vol. 2, No. 3, pp. 349-361, April-June (1980)

143. L. F. Eastman, R. Stall, D. Woodward, C. E. C. Wood, N. Dandekar, M. S. Shur, M. Hollis, and K. Board, Ballistic Electron Transport in Thin Layers of GaAs, Eighth International Symposium on Gallium Arsenide and Related Compounds, pp. 185-192 (1981)

144. M. S. Shur and L. F. Eastman, Near-Ballistic Transport in GaAs Devices at 77 K, Solid State Electronics, vol. 24, No. 1, pp. 11-18, January (1981)

145. M. S. Shur, Ballistic Transport in Semiconductor with Collisions, IEEE Trans. Electron. Devices, vol. ED-28, No. 10, pp. 1120-1130, October (1981)

146. A. A. Kastalskii, M. S. Shur, and K. Lee, Conductance of Small Semiconductor Devices, in Proceedings of IEEE Cornell Microwave Conference, Ithaca, NY. pp. 107-114, August (1981)

147. A. A. Kastalsky and M. S. Shur, Conductance of Small Semiconductor Devices, Solid State Comm., vol. 39, No. 6, p. 715 (1981)

148. C. Hyun, M. S. Shur, and A. Madan, DLTS of a-Si Solar Cells, J. Non-Cryst. Solids, vol. 46, No. 3, pp. 221-234, December (1981)

149. A. Madan, W. Czubatyj, J. Yang, M. S. Shur and M. P. Shaw, Observation of Two Modes of Current Transport Through Phosphorous Doped Amorphous Hydrogenated Silicon Schottky Barriers, Appl. Phys. Letters, vol. 40, No. 3, pp. 234-6, February (1982)

150. M. Hack, J. McGill, W. Czubatyj, R. Singh, M. S. Shur, and A. Madan, Minority Carrier Diffusion Lengths in Amorphous Silicon Based Alloys, J. Appl. Phys., vol. 53, No. 9, pp. 6270-6275, September (1982)

151. M. J. Helix, S. A. Jamison, C. Chao, and M. S. Shur, Fan out and Speed of GaAs SDFL Logic, Journal of Sol. State Circuits, vol. SC-17, No. 6, pp. 1226-1232, December (1982)

152. C. H. Hyun, M. S. Shur, and A. Madan, Determination of the Density of Localized States in Fluorinated a-Si using DLTS, Appl. Phys. Lett., vol. 41, No. 2, pp. 178-180, July (1982)

153. T. J. Drummond, H. Morkoc, Kwyro Lee, and M. S. Shur, Model for Modulation Doped Field Effect Transistor, IEEE EDL., vol. EDL-3, No. 11, pp. 338-341, Nov. (1982)

154. M. S. Shur and Don Long, Performance Prediction for Submicron GaAs SDFL Logic, IEEE ELECTRON DEVICE LETTERS, vol. EDL-3, No. 5, pp. 124-127, May (1982)

155. T. J. Drummond, S. L. Su, W. Kopp, R. Fischer, R. E. Thorne, H. Morkoc, K. Lee, and M. S. Shur, High Velocity N-On and N-Off Modulation Doped GaAs/AlGaAs FETs, in International Electron Device Meeting Digest, pp. 586-589, December (1982), San Francisco

156. M. Hack and M. S. Shur, Simulation of Amorphous Silicon P-I-N Solar Cells Based on the Complete Set of Semiconductor Equations, in Proceedings of IEEE Solar Cell Conference, pp. 1429-1430, September (1982), San Diego

157. T. J. Drummond, S. L. Su, W. G. Lyons, R. Fisher, W. Kopp, H. Morkoc, K. Lee, and M. S. Shur, Enhancement of Electron Velocity in Modulation Doped (A1,Ga)As/GaAs FETs at Cryogenic Temperatures, Electronics Letters, vol. 18, No. 24, pp. 1057-1058, November (1982)

158. M. S. Shur, Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFETs, Electronics Letters, vol. 18, No. 21, pp. 909-910, October (1982)

159. K. Lee, M. S. Shur, T. J. Drummond, S. L. Su, W. G. Lyons, R. Fisher, and H. Morkoc, Design and Fabrication of High Transconductance Modulation Doped Transistors, J. Vac. Sci. Tech., vol. B1, No. 2, pp. 186-189, April-June (1983)

160. A. van der Ziel, M. S. Shur, K. Lee, T. H. Chen and K. Amberiadis, Carrier Distribution and Low-Field Resistance in Short n+-n-n+ Structures, IEEE Transactions on Electron Devices, vol. ED-30, No. 2, pp. 128-137, February (1983)

161. K. Lee and M. S. Shur, Impedance of Thin Semiconductor Films, J. Appl. Phys., vol. 54, No. 7, pp. 4028-4034, July (1983)

162. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, Current-voltage and Capacitance-voltage Characteristics of Modulation Doped Field Transistors, IEEE Trans. on Electron Devices, vol. ED-30, No. 3, pp. 207-212, March (1983)

163. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, Electron Density of the Two-Dimensional Electron Gas in Modulation Doped Layers, J. Appl. Physics, vol. 54, No. 4, pp. 2093-2096, April (1983)

164. T. J. Drummond, R. Fisher, S. L. Su, W. G. Lyons, H. Morkoc, K. Lee, and M. S. Shur, Characteristics of Modulation Doped AlGaAs/GaAs Transistors: Effect of Donor-electron Separation, Applied Physics Letters, vol. 42, No. 3, p. 262-264, February (1983)

165. M. Hack and M. S. Shur, Computer Simulation of Amorphous Silicon p-i-n Cells, IEEE Electron Device Letters, vol. EDL-4, No. 5, pp. 140-143, May (1983)

166. A. J. Valois, G. Y. Robinson, K. Lee, and M. S. Shur, Temperature Dependence of the I-V Characteristics of Modulation-doped FETs, J. Vac. Sci. Tech., vol. B1, No. 2, pp. 190-195, April-June (1983)

167. T. Vu, P. Roberts, R. Nelson, G. Lee, B. Hanzai, K. Lee, D. Lamb, M. Helix, S. Jamison, S. Hanka, J. Brown, and M. S. Shur, A 432-cell GaAs Gate Array with on Chip 64-bit RAM, in Proceedings of IEEE Custom IC Conference, Rochester NY, p. 32-6, May (1983)

168. R. Fisher, T. J. Drummond, W. Kopp, H. Morkoc, K. Lee, and M. S. Shur, Instabilities in Modulation Doped Field-Effect Transistors (MODFETs) at 77K, Electronics Letters, vol. 19, No. 19, pp. 789-791, September (1983)

169. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, Low Field Mobility of 2-d Electron Gas in Modulation Doped AlGaAs/GaAs Layers, in Proceedings of UGIM-83, Ed. by Noel R. Strader, pp. 173-177, Texas A&M (1983)

170. T. H. Chen, M. S. Shur, B. Hoefflinger, K. W. Lee, T. T. Vu, P. C. T. Roberts, and M. J. Helix, DOMES - GaAs Simulator, in Proceedings of Biennial IEEE Conference on High Speed Devices, Cornell University, August (1983), pp. 327-337

171. M. Hack and M. S. Shur, Theoretical Model of Amorphous Silicon p-i-n Cells, J. Appl. Phys., vol. 54, No. 10, pp. 5858-5863, October (1983)

172.M. S. Shur and M. Hack, A New Analytical Approach to Amorphous Silicon Thin Film Transistors, in Proceedings of 10th International Conference on Amorphous and Liquid Semiconductors, Tokyo, August (1983). Also in J. Non-Cryst. Solids, vol. 59 & 60, pp. 1171-1174, December (1983)

173. M. Hack, M. S. Shur, W. Czubatyj, J. Yang, and J. McGill, Amorphous Silicon Based Alloy Solar Cell Modeling with a New Diffusion Length Interpretation, in Proceedings of 10th International Conference on Amorphous and Liquid Semiconductors, Tokyo, August (1983). Also in J. Non-Cryst. Solids, vol. 59 & 60, pp. 1115-1118, December (1983)

174. K. Lee, M. S. Shur, T. J. Drummond and H. Morkoc, Low Field Mobility of 2-D Electron Gas in Modulation Doped AlGaAs/GaAs Layers, J. Appl. Phys., vol. 54, No. 11, pp. 6432-6438, November (1983)

175. J. Klem, W. T. Masselink, D. Arnold, R. Fisher, T. J. Drummond, H. Morkoc, K. Lee, and M. S. Shur, Persistent Photoconductivity in (Al,Ga)As/GaAs Modulation Doped Structures: Dependence on Structure and Growth Temperature, J. Appl. Phys., vol. 54, No. 9, pp. 5214-5217, September (1983)

176. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, A Unified Method For Characterizing (Al,Ga)As/GaAs MODFETs Including Parasitic MESFET Conduction in the (Al,Ga)As, in Proceedings of the IEEE Conference on High Speed Devices and Circuits, pp. 177-186, Cornell University, August (1983)

177. T. J. Drummond, R. Fisher, W. Kopp, H. Morkoc, K. Lee, and M. S. Shur, Bias Dependence and Light Sensitivity of (Al,Ga)As/GaAs MODFETs at 77 K, IEEE Trans. Electron Devices, vol. ED-30, No. 12, pp. 1806-1811, December (1983)

178. M. S. Shur, Low Field Mobility, Effective Saturation Velocity and Performance of Submicron GaAs MESFET's, The Physics of Submicron Structures, Ed. by H. L. Grubin, K. Hess, G. J. Iafrate, and D. K. Ferry, Plenum Press, New York and London (1984), pp. 321-326

179. K. Lee, M. S. Shur, K. W. Lee, T. Vu, P. Roberts, and M. Helix, A New Interpretation of End Resistance Measurements, IEEE Electron Device Letters, vol. EDL-5, No. 1, pp. 5-7, January (1984)

180. K. Lee, M. S. Shur, K. W. Lee, T. Vu, P. Roberts, and M. Helix, Low Field Mobility in GaAs Ion-implanted FETs, IEEE Trans. on Electron Devices, vol. ED-31, No. 3, pp. 390-393, March (1984)

181. T. Vu, P. C. Roberts, R. D. Nelson, G. M. Lee, B. R. Hansal, K. W. Lee, N. Zafar, D. R. Lamb, M. J. Helix, S. A. Jamison, S. A. Hanka, J. C. Brown, and M. S. Shur, A Gallium Arsenide SDFL Gate Array with On-Chip RAM, IEEE Transactions on Electron Devices, vol. ED-31, No. 2, pp. 144-156, February (1984). Also reprinted in IEEE Journal of Solid-State Circuits, vol. SC-19, No. 1, pp. 10-22, February (1984)

182. T. J. Drummond, R. Fisher, D. Arnold, H. Morkoc, and M. S. Shur, Current-voltage and Capacitance-voltage Characteristics of a Metal/Al.5Ga.5As/GaAs Capacitor, Appl. Phys. Lett., vol. 44, No. 2, pp. 214-216, January (1984)

183. M. Hack and M. S. Shur, Intensity Dependence of the Minority Carrier Diffusion Length in Amorphous Silicon Based Alloys, J. Appl. Phys., vol. 55 No. 8, pp. 2967-2971, April (1984)

184. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, Parasitic MESFET in (Al,Ga)As/GaAs Modulation Doped FET, IEEE Trans. Electron Devices, vol. ED-31, No. 1, pp. 29-35, January (1984)

185. M. Hack and M. S. Shur, The Role of Boron Profiling in Enhancing the Performance of Amorphous Silicon Based Alloy p-i-n Solar Cells, IEEE Trans. Electron Devices, vol. ED-31, No. 5, pp. 539-542, May (1984)

186. N. C. Cirillo, J. K. Abrokwah, and M. S. Shur, Self-aligned Modulation Doped (Al,Ga)As/GaAs Field-effect Transistor, IEEE Electron Device Letters, vol. EDL-5, No. 4, pp. 129-131, April (1984)

187. K. Lee, M. S. Shur, T. J. Drummond, and H. Morkoc, Charge Control Model of Inverted GaAs-AlGaAs Modulation Doped FETs (IMODFETs), J. Vac. Sci. Tech., vol. B2, No. 2, pp. 113-116, April-June (1984)

188. T. J. Drummond, R. Fisher, W. Kopp, D. Arnold, J. Klem, H. Morkoc, and M. S. Shur, Temperature Dependence of Al/Undoped Al0.5Ga0.5As/GaAs MIS Capacitors, IEEE Trans. Electron Devices, vol. ED-31, No. 9, pp. 1164-1168, September (1984)

189. K. Lee, M. S. Shur, A. J. Valois, G. Y. Robinson, X. Zhu, and A. Van der Ziel, A New Technique for Characterization of the End Resistance in Modulation Doped FETs, IEEE Transactions on Electron Devices, vol. ED-31, No. 10, pp. 1394-1398, October (1984)

190. A. A. Grinberg, M. S. Shur, R. Fisher, and H. Morkoc, An Investigation of the Effect of Graded Layers and Tunneling on the Performance of AlGaAs/GaAs Heterojunction Bipolar Transistors, IEEE Trans. on Electron Devices, vol. ED-31, No. 12, pp. 1758-65, December (1984)

191. M. Hack and M. S. Shur, Theoretical Studies of the Electric Field Distribution and Open-circuit voltage of Amorphous Silicon Based Alloy p-i-n Solar Cells, J. Appl. Phys., vol. 55, No. 12, pp. 4413-4417, June (1984)

192. K. Lee, M. S. Shur, T. J. Drummond and H. Morkoc, Parallel Conduction Correction to Measured Room Temperature Mobility in (Al,Ga)As-GaAs Modulation Doped Layers, Japanese Journal of Applied Physics, vol. 23, No. 4, pp. L230-L231, April (1984)

193. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, Reply to 'Comment on Threshold Switching in Chalcogenide Glass Thin Films, J. Appl. Phys., vol. 56, No. 2, pp. 579-580, July (1984)

194. M. Hack, S. Guha, and M. S. Shur, Dependence of Photoconductivity on the Dark Fermi Level Position in Amorphous Silicon Alloys, Appl. Phys. Lett, vol. 45, No. 4, pp. 467-469, August (1984).

195. M. Hack, S. Guha, and M. S. Shur, Photoconductivity and Recombination in Amorphous Silicon Alloys, in AIP Conference Proceedings No. 120, Optical Effects in Amorphous Semiconductors, Ed. by P. C. Taylor and S. G. Bishop, AIP, New York (1984), pp. 40-47

196. M. Hack, S. Guha, and M. S. Shur, Photoconductivity and Recombination in Amorphous Silicon Alloys, Phys. Rev. B, vol. 30, No. 12, pp. 6991-6999, December (1984)

197. M. S. Shur, M. Hack, and C. Hyun, Characteristics of Amorphous Silicon Based Alloy Field Effect Transistors, in Proceedings of Material Research Conference, Albuquerque, New Mexico, pp. 307-12, February (1984)

198. M. S. Shur and M. Hack, Physics of Amorphous Silicon Based Alloy Field Effect Transistors, J. Appl. Phys., vol. 55, No. 10, pp. 3831-3842, May (1984)

199. M. Hack, M. S. Shur, W. Czubatyj, J. McGill and J. Yang, The Role of Boron Profiling in Enhancing the Performance of Amorphous Silicon Based Alloy p-i-n Solar Cells, in Proceedings of IEEE Photovoltaic Specialists Conference, May 1-4 (1984), pp. 336-340

200. A. A. Grinberg and M. S. Shur, Density of Two-dimensional Electron Gas in Modulation Doped Structure with Graded Interface, Appl. Phys. Lett., vol. 45, No. 5, pp. 573-574, September (1984)

201. K. W. Lee, M. S. Shur, T. T. Vu, New Technique for Measurement of Electron Saturation Velocity in GaAs MESFETs, IEEE Electron Device Letters, vol. EDL-5, No. 10, pp. 426-427, October (1984)

202. M. Hack and M. S. Shur, Limitations to the Performance of Amorphous Silicon Alloy Pin Solar Cells, in Proceedings of the First International Photovoltaic Conference, Kobe, November (1984)

203. M. S. Shur, M. Hack, and C. Hyun, Flat-band voltage and Surface States in Amorphous Silicon Alloy Field Effect Transistors, J. Appl. Phys., vol. 56, No. 2, pp. 382-386, July (1984)

204. C. Hyun, M. S. Shur, M. Hack, Z. Yaniv, and V. Cannella, Above Threshold Characteristics of Amorphous Silicon Thin-film Transistors, Appl. Phys. Lett., vol. 45, No. 11, pp. 1202-1203, December (1984)

205. M. S. Shur, Folded Gate - a Novel Logic Gate Structure, IEEE Electron Device Letters, vol. EDL-5, No. 11, pp. 454-455, November (1984)

206. N. C. Cirillo, A. Fraasch, H. Lee, L. F. Eastman, M. S. Shur, and S. Baier, Novel Multilayer Modulation Doped (Al,Ga)As/GaAs Structures for Self-aligned Gate FETs, Electronics Letters, vol. 20, No. 21, pp. 854-855, October (1984)

207. N. C. Cirillo, J. K. Abrokwah, and M. S. Shur, A Self-aligned Gate Process for IC's Based on Modulation Doped (Al,Ga)As FETs, IEEE Trans. on Electron Devices, vol. ED-31, No. 12, p. 1963, December (1984)

207. A. A. Grinberg and M. S. Shur, Modulation Doped Structures with Graded Interfaces. J. Appl. Phys., vol. 57, No. 4, pp. 1242-1246, February (1985)

209. M. S. Shur, Analytical Models of GaAs FETs, IEEE Trans. Electron Devices, vol. ED-32, No. 1, pp. 70-72, January (1985)

210. T. H. Chen and M. S. Shur, Analytical Models of Ion-implanted FETs, IEEE Trans. Electron Devices, vol. ED-32, No. 1, pp. 18-28, January (1985)

211. T. H. Chen and M. S. Shur, A Capacitance Model of GaAs MESFETs, IEEE Trans. Electron Devices, vol. ED-32, No. 5, pp. 883-91, May (1985)

211a. M. S. Shur, T. H. Chen, C. H. Hyun, P. N. Jenkins, and N. Cirillo, Jr., Simulation and Design of Self-aligned Modulation Doped AlGaAs/GaAs Integrated Circuits, in Proceedings of the International Solid State Circuit Conference Technical Digest, New York (1985), pp. 264-265

212. K. W. Lee, M. S. Shur, K. Lee, T. Vu, P. Roberts and M. Helix, Source, Drain, and Gate Resistances and Electron Saturation Velocity in Ion-implanted GaAs FETs, IEEE Transactions on Electron Devices, vol. ED-32, No. 5, pp. 987-992, May (1985)

213. M. S. Shur, Spill-over Effects in Planar Doped Barrier Structures, Appl. Phys. Lett., vol. 47, No. 8, pp. 869-871, October (1985)

214. M. Hack and M. S. Shur, Analysis of Light-Induced Degradation in Amorphous Silicon p-i-n Cells, J. Appl. Phys., vol. 58, No. 4, pp. 1656-1661, August (1985)

215. M. Hack and M. S. Shur, Physics of a-Si p-i-n Solar Cells, J. Appl. Phys., vol. 58, No. 2, pp. 997-1020, July (1985)

216. A. A. Grinberg and M. S. Shur, Effect of Image Charges on Impurity Scattering of Two-dimensional Electron Gas in AlGaAs/GaAs, J. Appl. Phys., vol. 58, No. 1, pp. 382-6, July (1985)

217. J. Baek, M. S. Shur, K. Lee, and T. Vu, Current-voltage Characteristics of Ungated GaAs FETs, IEEE Trans. Electron Devices, vol. 32, No. 11, pp. 2426-2430, November (1985)

218. M. S. Shur and M. Hack, Determination of Density of Localized States in Amorphous Silicon Alloys, in Material Research Society Symposia Proceedings, vol. 49, Editors D. Adler, A. Madan and M. J. Thompson, MRS (1985), pp. 69-76

219. M. Hack, M. S. Shur, C. H. Hyun, Z. Yaniv, and V. Cannela, Theoretical and Experimental Studies of Above Threshold Characteristics of a-Si Alloy Thin Film Transistors, in Material Research Society Symposia Proceedings, vol. 49, Editors D. Adler, A. Madan, and M. J. Thompson, MRS (1985), pp. 373-378

220. M. S. Shur, Device Models for High Speed GaAs Integrated Circuits, in Proceedings of International Conference on Circuits and Systems, Kyoto, June (1985), pp. 43-46

221. S. M. Baier, M. S. Shur, K. Lee, N. C. Cirillo, and S. A. Hanka, FET Characterization using Gated TLM Structure, IEEE Trans. Electron Devices, vol. ED-32, No. 12, pp. 2824-2829, December (1985)

222. M. S. Shur, C. Hyun, M. Hack, Z. Yaniv, M. Yang and V. Cannella, Localized States Distribution and Characteristics of Amorphous Silicon Alloy FETs, in Proceedings of the 11th International Conference on Amorphous and Liquid Semiconductors, Rome, Italy (1985), Ed. F. Evangelisti and J. Stuke, North Holland, Amsterdam, pp. 1401-1404

223. M. Hack and M. S. Shur, Analysis of Light Induced Degradation in Amorphous Silicon Alloy p-i-n Solar Cells, in Proceedings of the 11th International Conference on Amorphous and Liquid Semiconductors, Rome, Italy (1985), Ed. by F. Evangelisti and J. Stuke, North Holland, Amsterdam, pp. 1481-1484

224. M. Hack and M. S. Shur, Implications of Light-induced Defects on the Performance of Amorphous Silicon Alloys p-i-n Solar Cells, in Conference Record of the 18th Photovoltaic Specialists Conference, Las Vegas, October 21-25 (1985), pp. 1588-1593

225. C. H. Hyun, M. S. Shur, J. H. Baek, N. C. Cirillo, Comparative Study of MODFET Integrated Circuits Operating at 77 and 300 K, in Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, July (1985), IEEE Cat. No. 85 CH2173-3, pp. 220-229

226. N. C. Cirillo, M. S. Shur, P. J. Vold, J. K. Abrokwah, R. R. Daniels, and O. N. Tufte, Complementary Heterostructure Insulated Gate Field Effect Transistors (HIGFETS), IEDM Technical Digest, pp. 317-320 (1985), Washington, published by IEEE

227. N. C. Cirillo, M. S. Shur, P. J. Vold, J. K. Abrokwah and O. N. Tufte, Realization of n-channel and p-channel High Mobility (Al,Ga)As-GaAs Heterostructure Insulated Gate FETs on a Planar Wafer Surface, IEEE Electron Device Letters, vol. EDL-6, No. 12, pp. 645-647, December (1985)

228. M. S. Shur and M. Hack, Determination of Density of Localized States in Amorphous Silicon Alloys from The Low Field Conductivity of Thin n-i-n Diodes, J. Appl. Phys., vol. 69, No. 3, pp. 803-807, February (1986)

229. M. S. Shur, C. Hyun, and M. Hack, New High Mobility Regimes of Operation of Amorphous Silicon Alloys FETs, J. Appl. Phys., vol. 59, No. 7, pp. 2488-2497, April (1986)

230. M. S. Shur, C. Hyun, M. Hack, and W. Czubatyj, Amorphous Silicon Alloys Thin Film Transistor Operation with High Field Effect Mobility, Proceedings of SPIE - International Society for Optical Engineering, vol. 617, Amorphous Semiconductors for Microelectronics, pp. 33-42 (1986)

231. M. S. Shur, GaAs FET Model, book section in Circuit Analysis, Simulation and Design, Advances in CAD for VLSI Series, Ed. A. Ruehli, North Holland (1986), pp. 155-178

232. C. H. Hyun, M. S. Shur, N. C. Cirillo, Simulation and Design Analysis of AlGaAs/GaAs MODFET Integrated Circuits, IEEE Trans. CAD ICAS, vol. CAD-5, No. 2, pp. 284-292, April (1986)

233. A. Peczalski, M. S. Shur, C. H. Hyun, K. Lee and T. Vu, Design Analysis of GaAs Direct Coupled Field Effect Transistor Logic, IEEE Trans. CAD ICAS, vol. CAD-5, No. 2, pp. 266-273, April (1986)

234. C. H. Chen, M. S. Shur and A. Peczalski, Trapping Enhanced Temperature Variation of the Threshold voltage of GaAs MESFETs, IEEE Trans. Electron Devices, vol. ED-33, No. 6, pp. 792-797, June (1986)

235. M. S. Shur, D. K. Arch, R. R. Daniels, and J. K. Abrokwah, New Negative Resistance Regime of Heterostructure Insulated Gate Transistor (HIGFET) Operation, IEEE Electron Device Letters, vol. EDL-7, No. 2, pp. 78-80, February (1986)

236. N. C. Cirillo, M. S. Shur, and J. K. Abrokwah, Inverted GaAs/AlGaAs Modulation Doped Transistors with Extremely High Transconductances, IEEE Electron Device Letters, vol. EDL-7, No. 2, pp. 71-74, February (1986)

237. M. Hack and M. S. Shur, Implications of Light-induced Defects on the Performance of Amorphous Silicon Alloy p-i-n Solar Cells, J. Appl. Phys., vol. 59, No. 6, pp. 2222-2228, March (1986)

238. J. Xu and M. S. Shur, A Tunneling Emitter Bipolar Junction Transistor, IEEE Electron Device Letters, vol. EDL-6, No. 7, pp. 416-418 (1986)

239. M. S. Shur, K. Lee, R. Choe, and E. Berger, Charge Collection by Drift During Single Particle Upset, IEEE Transactions on Nuclear Science, vol. NS-33, No. 5, pp. 1140-1146, October (1986)

240. M. Hack, M. S. Shur, and W. Czubatyj, Double Injection Field Effect Transistor Ò A new type of solid state device, Mat. Res. Soc. Symp. Proc. vol. 70. pp. 643-646 (1986)

241. M. Hack, M. S. Shur, W. Czubatyj, Double Injection Solid State Transistor - A new solid state device, Appl. Phys. Lett., vol. 48, (20), pp. 1386-1388, May (1986)

242. J. H. Baek, M. S. Shur, R. R. Daniels, D. K. Arch, J. K. Abrokwah, and O. N. Tufte, New Mechanism of Gate Current in Heterostructure Insulated Gate Field-Effect Transistors, IEEE Electron Device Letters, vol. EDL-7, No. 9, pp. 519-521, September (1986)

243. R. R. Daniels, R. Mactaggart, J. K. Abrokwah, O. N. Tufte, M. S. Shur, J. Baek and P. Jenkins, Complementary Heterostructure Insulated Gate FET Circuits for High-Speed, Low Power VLSI, IEDM Technical Digest, pp. 448-449, Los Angeles CA (1986)

244. D. K. Arch, J. K. Abrokwah, P. J. Vold, A. M. Fraasch, R. R. Daniels, N. C. Cirillo, M. S. Shur and J. Xu, Modulation-Doped Field-Effect Transistors Utilizing Superlattice AlGaAs/n+-GaAs Charge-Control Layers, Abstract, IEEE Trans. Electron Devices, vol. ED-38, No. 11, p. 1839 (1986)

245. J. Xu and M. S. Shur, Tunneling Emitter Bipolar Transistors (TEBTs), in Proceedings of the 1986 IEEE Bipolar Circuits and Technology Meeting, pp. 27 - 28, Minneapolis, IEEE (1986)

246. M. S. Shur, J. K. Abrokwah, R. R. Daniels, D. K. Arch, and N. C. Cirillo, Jr., Novel Heterostructure Transistors with Extremely Small Separation between the Gate and the Channel, in Extended Abstracts of the 18-th (1986 International) Conference on Solid State Devices and Materials, Tokyo (1986), ISBN 4-930813-14-X, Jap. Soc. Appl. Phys., pp. 363-366

247. J. Xu, B. A. Bernhardt, M. S. Shur, C. H. Chen, and A. Peczalski, Electron mobility and velocity in compensated GaAs, Appl. Phys. Lett., 49 (6), pp. 342-344 Aug. (1986)

248. A. Peczalski, M. S. Shur, and C. H. Chen, Device Physics and Modeling for GaAs Integrated Circuits, in Proceedings of KOSEF/NSF Joint Seminar, Aug. 7-29 (1986), Ed. C. Lee and W. Paul, Korea Science and Engineering Foundation and National Science Foundation, pp. 227-236

249. C. H. Hyun, M. S. Shur, and A. Peczalski, Analysis of Noise Margin and Speed of GaAs MESFET DCFL using UM-SPICE, IEEE Trans. CAD ICAS, vol. ED-33, No. 10, pp. 1421-1426, April 1986

250. M. Hack and M. S. Shur, Limitations to the open circuit voltage of amorphous silicon solar cells, Appl. Phys. Lett., vol. 49 (21), pp. 1432-1434, Nov. 24 (1986)

251. M. S. Shur, Folded Logic Gate, United States Patent # 4,593,300, June 3 (1986)

252. M. S. Shur, GaAs Devices and Circuits, Plenum Publishing Corporation, New York (1987)

253. A. Peczalski, C. H. Chen, M. S. Shur and S. M. Baier, Modeling and characterization of GaAs MESFETs, IEEE Trans. Electron Devices, vol. ED-34, No. 4, pp. 726-732 (1987)

254. D. K. Arch, M. S. Shur, J. K. Abrokwah, and R. R. Daniels, Superlattice Conduction in Superlattice Modulation-Doped Field-Effect Transistors, J. Appl. Phys, 61(4), pp. 1503-1509, Feb. 15 (1987)

255. M. S. Shur, J. K. Abrokwah, R. R. Daniels, and D. K. Arch, Mobility Enhancement in Highly Doped GaAs Quantum Wells, J. Appl. Phys, 61(4), pp. 1643-1645, Feb. 15 (1987)

256. M. Hack, H. Tuan, J. Shaw, M. S. Shur, and P. Yap, Physics of Novel Amorphous Silicon High voltage Transistor,, Material Research Society Conference, in Material Research Society Symposia Proceedings, Editors D. Adler, A. Madan and M. J. Thompson, MRS (1987), Proc. vol. 95, pp. 457-462 (1987)

257. C. H. Chen, A. Peczalski, M. S. Shur, and H. K. Chung, Orientation and Ion-implanted Transverse Effects in Self-Aligned GaAs MESFETs, IEEE Trans. Electron Devices, vol. ED-34, No. 7, pp. 1470-1481, July 1987

258. J. Xu and M. S. Shur, Velocity-Field Dependence in GaAs, IEEE Trans. Electron Devices, vol. ED-34, No. 8, pp. 1831-1832, Aug. 1987

259. J. Xu, M. S. Shur, and M. Hack, Amplification of Bipolar Current Flow by Charge Induced from an Insulated Gate, Applied Physics Letters, J. Appl. Phys., 62 (3), pp. 1108-1111, Aug. 1987

260. J. Baek, M. S. Shur, R. R. Daniels, D. K. Arch, J. K. Abrokwah, and O. N. Tufte, Current-voltage and Capacitance-voltage Characteristics of Heterostructure Insulated Gate Field Effect Transistors, IEEE Trans. Electron Devices, vol. ED-34, No. 8, pp. 1650-1657 (1987)

261. J. Xu and M. S. Shur, Velocity-Field Characteristics with Two Maxima in Compensated GaAs, Phys. Rev. B, vol. 36, No. 5, Aug. (1987)

262. M. S. Shur, Bipolar Permeable Base Transistor, in Proceedings of IEEE Bipolar Conference, Minneapolis, MN, pp. 37-38, September (1987)

263. J. Xu and M. S. Shur, Ballistic Transport in Hot Electron Transistors, J. Appl. Phys., 62 (9). pp. 3816-3820, 1 Nov. (1987)

264. R. R. Daniels, P.P. Ruden, M. S. Shur, D. E. Grider, T. Nohava, and D. Arch, Doped Channel Pseudomorphic GaAs/InGaAs/AlGaAs Heterostructure FETs, IEDM Technical Digest, pp. 921-924 (1987)

265. S. M. Baier, N. C. Cirillo Jr., S. A. Hanka, and M. S. Shur, Gated Transmission Line Model Structure for Characterization of FETs, Jan. 20 (1987), United States Patent # 4,638,341

266. M. Hack and M. S. Shur, Analysis of Stability of Amorphous Silicon Solar Cells, AIP Conference Proceedings, vol. 157, pp. 134-141 (1987)

267. M. Hack and M. S. Shur, Analysis of Amorphous Silicon Thin-Film Transistors, J. Non-Cryst. Solids, vol. 87 &88, 1291-1294 (1987)

268. M. Hack, R. Street, and M. S. Shur, Capacitance Studies of Thermal Equilibrium Changes in N-type Amorphous Silicon, J. Non-Cryst. Solids, vol. 87 &88, p. 803-806 (1987)

269. P. P. Ruden, C. J. Han, and M. S. Shur, Gate Current of Modulation Doped Field Effect Transistors, J. Appl. Phys., 64 (3), pp. 1541-1546, 1 Aug. (1988)

270. J. Baek and M. S. Shur, Comment on Charge Control MODFET Model, IEEE Trans. ED, IEEE Trans. Electron Devices, ED-35, No. 7, pp. 1162-1163, July (1988)

271. M. S. Shur, Recombination Current in Forward Biased p-n Junctions, IEEE Trans. Electron Devices, ED-35, No. 9, pp. 1564-1565, July (1988)

272. J. Conger, A. Peczalski, and M. S. Shur, Subthreshold Current in GaAs MESFETs, IEEE Electron Device Letters, EDL-9, No. 3, pp. 128-129, March (1988)

273. J. Xu and M. S. Shur, Double Ridley-Watkins-Hilsum-Gunn Effect in Compensated GaAs, Solid State Electronics, 31, pp. 607-610 (1988)

274. J. Xu and M. S. Shur, Double Base Hot Electron Transistor, Superlattices and Microstructures, vol. 4, No. 3, pp. 329-332 (1988)

275. J. Xu and M. S. Shur, Temperature Dependence of Electron Mobility and Peak Velocity in Compensated GaAs, Appl. Phys. Lett., 52 (11), pp. 922-923 (1988)

276. C. H. Chen, S. Baier, D. Arch, and M. S. Shur, A New and Simple Model for GaAs Heterojunction FET Characteristics, IEEE Trans. Electron Devices, ED-35, No. 5, pp. 570-577, May (1988)

277. M. S. Shur, J. H. Baek, P. P. Ruden, R. R. Daniels, D. E. Grider, T. Nohava, and D. Arch, Modeling and simulation of doped channel heterostructure FETs and integrated circuits, in Proceedings of 1988 IEEE International Symposium on Circuits and Systems, pp. 409-412, Helsinki (1988)

278. J. G. Simmons and M. S. Shur, Novel high speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits, in Proceedings of 1988 IEEE International Symposium on Circuits and Systems, pp. 1701-1704, Helsinki (1988)

279. R. R. Daniels, P.P. Ruden, M. S. Shur, D. E. Grider, T. Nohava, and D. Arch, Quantum Well p-channel AlGaAs/InGaAs/GaAs Heterostructure Insulated Gate Field Effect Transistors with Very High Transconductance, IEEE Electron Device Letters, EDL-9, pp. 355-357, July (1988)

280. M. Sweeny, J. Xu, M. S. Shur, Hole Subbands in One-Dimensional Quantum Well Wires, Superlattices and Microstructures, vol. 4, No. 4/5, pp. 623-626 (1988)

281. Y. Byun, M. S. Shur, A. Peczalski, and F. L. Schuermeyer, Gate-Voltage Dependence of Source and Drain Series Resistances and Effective Gate Length in GaAs MESFETs, IEEE Trans. Electron Devices, ED-35, pp. 1241-1246, August (1988)

282. M. Hack, J. G. Shaw, and M. S. Shur, Novel Amorphous Silicon Transistors For Use in Large Area Microelectronics, Material Research Society Conference, in Material Research Society Symposia Proceedings, Editors A. Madan and M. J. Thompson, P. C. Taylor, P. G. Lecomber, and Y. Hamakawa. MRS, vol. 118, p.207- 218 (1988)

283. M. Berroth, M. S. Shur, and W. Haydl, Hot Electron Model for GaAs Metal Semiconductor Field Effect Transistors, in Proceedings of the 1988 International Electronic Devices and Material Symposium, Taipei, pp. 177-181, August 29-31 (1988)

284. M. Berroth, M. S. Shur, and W. Haydl, Experimental Studies of Hot Electron Effects in GaAs MESFETs, in Extended Abstracts of the 20th (1988 International) Conference on Solid State Devices and Materials (SSDM-88), Tokyo, pp. 255-258, August 24-26 (1988)

285. C. J. Han, P. P. Ruden, D. Grider, A. Fraasch, K. Newstrom, P. Joslyn, and M. S. Shur, Short Channel Effects in Submicron Self-Aligned Gate Heterostructure Field Effect Transistors, IEDM Technical Digest, San Francisco, pp. 696-699, December (1988)

286. T. Vu, R. D. Nelson, G. M. Lee, P. C. T. Roberts, K. W. Lee, S. K. Swanson, A. Peczalski, W. R. Betten, S. A. Hanka, M. J. Helix, P. J. Vold, G. Y. Lee, S. A. Jamison, C. Arsenault, S. M. Karwaski, B. A. Naused, B. K. Gilbert, and M. S. Shur, Low Power 2K-Cell Gate Array and DCFL Circuits Using GaAs Self-aligned E/D MESFET's, IEEE J. Solid State Circuits, 23, No. 1, pp. 224-238, Feb. (1988)

288. P. P. Ruden, M. S. Shur, A. I. Akinwande, and P. Jenkins, Distributive Nature of Gate Current and Negative Transconductance in Heterostructure Field Effect Transistors, IEEE Transactions on Electron Devices, ED-36, No. 2, pp. 453-456, Feb. (1989)

289. P. C. Chao, M. S. Shur, R. C. Tiberio, K. H. G. Duh, P. M. Smith, J. M. Ballingall, P. Ho, and A. A. Jabra, DC and Microwave Characteristics of Sub-0.1µm gate-length planar-doped pseudomorphic HEMTs, IEEE Trans. Electron Devices, ED-36, No. 3, pp. 461-473, March (1989)

290. A. A. Grinberg and M. S. Shur, New Analytic Model for Heterostructure Field Effect Transistors, J. Appl. Phys., vol. 65(5), p.2116, March 1 (1989)

291. P. P. Ruden, M. S. Shur, D. K. Arch, R. R. Daniels, D. E. Grider, T. Nohava, Quantum Well p-channel AlGaAs/InGaAs/GaAs Heterostructure Insulated Gate Field Effect Transistors, IEEE Trans. Electron Devices, ED-36, No. 11, pp. 2371-2379 (1989)

292. M. S. Shur, M. Hack, and J. G. Shaw, A New Analytic Model for Amorphous Silicon Thin Film Transistors, J. Appl. Phys., 66(7), 3371-3380, 1 Oct. (1989)

293. M. S. Shur, Submicron GaAs, AlGaAs/GaAs and AlGaAs/InGaAs Transistors, (book chapter), in Integrated Circuits in 0.05-0.5 µm dimensional range, John Wiley and Sons, ed. K. Watts, pp. 122-175 (1989)

294. M. Hack, M. S. Shur, and C. C. Tsai, Amorphous Silicon Photoconductive Diode, Appl. Phys. Lett., 54 (2), pp. 96-98, Jan. 9 (1989)

295. M. S. Shur, Split-gate Field Effect Transistor, Appl. Phys. Lett., 54 (2), pp. 162-164, Jan. 9 (1989)

296. M. S. Shur, Physical Models for Compound Semiconductor Field Effect Transistors, in Semiconductor Device Modeling, pp. 89-108, C. Snowden, Editor, Springer-Verlag, London (1989)

297. M. S. Shur, Gallium Arsenide versus Silicon. Applications and Modeling, in Semiconductor Device Modeling, pp. 60-69, C. Snowden, Editor, Springer-Verlag, London (1989)

299. M. Hack, M. S. Shur, and J. G. Shaw, Physical Models for Amorphous Silicon Thin Film Transistors and Their Implementation in a Circuit Simulation program, IEEE Transactions Electron Devices, ED-36, No. 12, pp. 2764-2769 (1989)

300. J. Costa, M. S. Shur, and A. Peszalski, Monte Carlo Studies of Steady-State Electronic Transport in Compensated In0.53Ga0.47As, J. Appl. Phys., June (1989)

301. J. K. Abrokwah, N. C. Cirillo, M. S. Shur, and O. N. Tufte, High Transconductance Complementary (Al,Ga)As/GaAs Heterostructure Insulated Gate Field-Effect Transistor, United States Patent # 4,814,851, March 21 (1989)

302. M. S. Shur, M. Hack, and J. G. Shaw and R. A. Martin, Material Properties of Amorphous Silicon Relevant to Applications in Microelectronics, Proceedings of Advanced Material Concepts Conference, Denver, pp. 174-182, F. W. Smith, Editor, Advanced Materials Institute, Colorado (1989)

303. M. S. Shur, Applications of New Semiconductor Materials for Variable Threshold Field Effect Transistors, Proceedings of Advanced Material Concepts Conference, Denver, pp. 432-440, F. W. Smith, Editor, Advanced Materials Institute, Colorado (1989)

304. J. Costa, A. Peszalski, and M. S. Shur, Monte Carlo Studies of Electronic Transport in Compensated InP, J. Appl. Phys., 66(2), pp. 674-679 (1989)

305. M. S. Shur, M. Hack, J. G. Shaw and R. A. Martin, Capacitance-voltage characteristics of amorphous silicon thin film transistors, J. Appl. Phys., 66(7), 3381-3385, 1 Oct. (1989)

306. G. U. Jensen, T. A. Fjeldly, and M. S. Shur, Monte Carlo Simulation of Self-Aligned Heterostructure AlGaAs/GaAs Field Effect Transistors, Proceedings of the Sixth International Nasecode Conference, pp. 232-237, Ed. J. J. H. Miller, Bode Press Ltd., Ireland (1989)

307. M. S. Shur, III-V Transistors and Integrated Circuits (Tutorial), in Proceedings of ISSSE'89 International Symposium on Signals, Systems and Electronics, pp. 181-186, N∏rnberg, Fed. Rep. of Germany, September 18-20 (1989)

308. J. Xu and M. S. Shur, Tunneling Emitter Bipolar Transistor, United States Patent # 4,845,541, July 4 (1989)

309. G. U. Jensen, B. Lund, Tor A. Fjeldly, and M. S. Shur, Dependence on Gate Length of Electrical Properties of Self-Aligned AlGaAs/GaAs HEMTs studied by Monte Carlo Technique, in Proceedings of ESSDERC 89, Berlin, Sep. 11-14, pp. 615-618 (1989)

310. C. J. Han, P. P. Ruden, T. Nohava, D. Narum, D. Grider, K. Newstrom, P. Joslyn, and M. S. Shur, Velocity Saturation Effect in Heterostructure Field Effect Transistors, IEDM Technical Digest, pp. 121-124, IEEE, Washington (1989)

311. M. Hack, J. G. Shaw and M. S. Shur, Development of SPICE models for Amorphous Silicon Thin-Film Transistors, in Material Research Society Symposia Proceedings, MRS, vol. 149, pp. 233-238 (1989)

312. R. A. Martin, M. Hack, J. G. Shaw and M. S. Shur, Intrinsic Capacitance-Voltage characteristics of Amorphous Silicon and Polysilicon Thin Film Transistors, IEDM Technical Digest, pp. 361-364, IEEE, Washington (1989)

314. M. Hack, J. G. Shaw and M. S. Shur, Simulations and Physics of Amorphous Silicon Thin-Film Transistors, J. Non. Cryst. Solids, 115, pp. 150-155 (1989)

315. W. Czubatyj, M. Hack, and M. S. Shur, Method of Making a Double Injection Field Effect Transistor, United States Patent # 4,882,295, Nov. 21 (1989)

316. M. S. Shur, Modeling of GaAs and AlGaAs/GaAs Field Effect Transistors, in Introduction to GaAs Technology, J. Wiley, New York, ed. C. T. Wang (1990), pp. 27-97

317. M. S. Shur, Physics of Semiconductor Devices (with microcomputer programs), Prentice Hall, New Jersey (1990)

318. B. J. Moon, Y. H. Byun, K. Lee, and M. S. Shur, New Continuous Heterostructure Field Effect Transistor Model and Unified Parameter Extraction Technique, IEEE Trans. Electron Devices, ED-37, No. 4, pp. 908-918, April (1990)

319. P. P. Ruden, M. S. Shur, A. I. Akinwande, J. Nohava, D. Grider, and J. H. Baek, AlGaAs-InGaAs-GaAs Quantum Well Doped Channel Heterostructure Field Effect Transistors. IEEE Trans. Electron Devices, vol. 37, No. 10, pp. 2171-2175, October (1990)

320. Y. Byun, K. Lee, and M. S. Shur, Unified Charge Control Model and Subthreshold Current in Heterostructure Field Effect Transistors, IEEE Electron Device Letters, EDL-11, No. 1, pp. 50-53, Jan. 1990, see also correction IEEE Electron Device Letters, EDL-11, No. 6, p. 273, June (1990)

321. C. J. Han, P. P. Ruden, T. Nohava, D. Narum, D. Grider, K. Newstrom, P. Joslyn, and M. S. Shur, Velocity Saturation in Heterostructure Field Effect Transistors, IEEE Trans. Electron Devices, ED-37, No. 3, pp. 530-535, March (1990)

322. J. Xu and M. S. Shur, Double Base Hot Electron Transistor, United States Patent #4,901,122, February 13 (1990)

323. J. Xu, M. S. Shur, and M. Sweeny, Electronic and optoelectronic devices utilizing light hole properties, United States Patent, #4,899,201, February 6 (1990)

324. M. S. Shur, Modulation Doped Radiation Emitting Device, United States Patent 4,905,059, Feb. 27 (1990)

325. M. S. Shur and J. Simmons, Novel high speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits, United States Patent #4,899,200, February 6 (1990)

326. T. Brudevoll, T. A. Fjeldly, J. Baek, and M. S. Shur, Scattering Rates for Holes Near the Valence Band Edge in Semiconductors, J. Appl. Phys., 67 (12), pp. 7373-7382, 15 June (1990)

327. J. H. Baek and M. S. Shur, Mechanism of Negative Transconductance in Heterostructure Field Effect Transistors, IEEE Transactions Electron Devices, vol. 37, No. 8, pp. 1917-1921, August (1990)

328. K. Lee and M. S. Shur, p-Heterostructure Field Effect Transistors, SPIE conference Proceedings, vol. 1288, High Speed Electronics and Device Scaling, pp. 269-279, March (1990)

329. K. Lee and M. S. Shur, p-Heterostructure Field Effect Transistors for VLSI applications, IEEE Transactions Electron Devices, vol. 37, No. 8, pp. 1810-1820, Aug. (1990)

330. B. J. Moon, Y. H. Byun, K R. Lee, and M. S. Shur, Continuous Heterostructure Field Effect Transistor Model, in Proceedings of ISCAS, pp. 3069-3072, New Orleans, May (1990)

331. A. A. Akinwande, J. Zou, M. S. Shur, and A. Gopinath, Dipole Heterostructure Field Effect Transistor, IEEE Electron Device Letters, EDL-11, No. 8, pp. 332-333 (1990)

332. Y. J. Chen, E. D. Dahlberg, M. S. Shur, and A. Akinwande, Effect of Magnetic Field on Gate Current in Heterostructure Field Effect Transistors, Appl. Phys. Lett., 56 (20), pp. 2028-2030, May 14 (1990)

333. C. K. Park, B. J. Moon, K. R. Lee, and M. S. Shur, Unified I-V Model and Parameter Extraction of Submicron nMOSFETS for Circuit Simulation and Statistical Process Characterization, in Proceedings of 7th VLSI Process and Device Modeling Workshop, Aug. 20-21, Kawasaki, Japan (1990)

334. J. Zou, A. Gopinath, T. Akinwande, and M. S. Shur, Heterostructure Field Effect Transistor with doping dipole in charge control layer, Electronics Letters, vol. 26, No 14, p. 914, July (1990)

335. T. Steen, T. A. Fjeldly, and M. S. Shur, Analytical Modeling of Heterostructure Field Effect Transistors, in Proceedings of the 14th Nordic Semiconductor Meeting, Aarhus, Denmark, pp. 359-362, 17-20 June (1990)

336. T. A. Fjeldly, G. U. Jensen, B. Lund, T. Brudevoll, and M. S. Shur, Supercomputer Simulation of Advanced Semiconductor Devices by Self-Consistent Monte Carlo Technique, in Proceedings of the 14th Nordic Semiconductor Meeting, Aarhus, Denmark, June 17-20 (1990), pp. 347-350

337. M. E. Levinshtein and M. S. Shur, Editors, Best of Soviet Semiconductor Physics and Technology (1987-1988), American Institute of Physics, New York (1991)

338. Y. H. Byun, F. L. Schuermeyer, K. Lee, M. S. Shur, P. Cook, E. Martinez, E. J. Martinez, K. Evans, and C. E. Stutz, Quantum-Well Doped p-channel AlGaAs/GaAs0.85Sb0.15/GaAs Heterostructure Field Effect Transistors, IEEE Trans. Electron Devices, vol. 38, No. 3, pp. 672-674, March (1991)

339. B. J. Moon, C. K. Park, K. Lee, and M. S. Shur, New Short Channel nÒMOSFET Current-Voltage Model in Strong Inversion and Unified Parameter Extraction Method, IEEE Trans. Electron Devices, vol. 38, No. 3, pp. 592-602, March (1991)

340. C. K. Park, C. Y. Lee, K. R. Lee, B. J. Moon, Y. Byun, and M. S. Shur, A Unified Charge Control Model for Long Channel n-MOSFETs, IEEE Trans. Electron Devices, vol. ED 38, pp. 399-406, Feb. (1991)

341. G. U. Jensen and M. S. Shur, Variable Threshold Heterostructure FET Studied by Monte Carlo Simulation, in Computational Electronics. Semiconductor Transport and Device Simulation, K. Hess, J. P. Leburton, and U. Ravaioli, Ed., Kluwer Academic Publishers, Norwell, MA (1991), pp. 123-126

342. G. Kelner, S. Binari, M. Shur, J. Palmour, High Temperature Performance of a-Silicon Carbide Buried Gate Junction Field-Effect Transistors, Electronics Letters, vol. 27, No. 12, pp. 1038-1040, 6 June (1991)

343. R. F. Davis, G. Kelner, M. S. Shur, J. W. Palmour, and J. A. Edmond, Thin Film Deposition and Microelectronic and Optoelectronic Device Fabrication and Characterization in Monocrystalline Alpha and Beta Silicon Carbide, Proc. of IEEE, 79, No. 5, pp. 677-701, May (1991)

344. G. U. Jensen, B. Lund, T. A. Fjeldly, and M. S. Shur, Monte Carlo Simulation of Short Channel Heterostructure Field Effect Transistors, IEEE Transactions on Electron Devices, ED-38, No. 4, pp. 840-851 (1991)

345. M. Hack, J. G. Shaw and M. S. Shur, High Current Thin Film Transistor, Patent 4,990,977, Feb. 26 (1991)

346. W. C. B. Peatman, T. W. Crowe, and M. S. Shur, Design and Fabrication of Heterostructure Varactor Diodes for Millimeter and Submillimeter Wave Multiplier Applications, in Proceedings of 1991 IEEE/Cornell Conference, Ithaca, Cornell, pp. 49-57 (1991)

347. G. U. Jensen, B. Lund, M. S. Shur, and T. A. Fjeldly, Monte Carlo Simulation of Semiconductor Devices, Computer Physics Communications, vol. 67, No. 1, pp. 1-61 (1991)

348. T. A. Fjeldly, B. Moon, and M. S. Shur, Approximate Analytical Solution of Generalized Diode Equation, IEEE Trans. Electron Devices, ED-38, No. 8, pp. (1976)-1977, August (1991)

349. M. S. Shur, T. A. Fjeldly, and G. U. Jensen, Supercomputer Simulation of Submicron Semiconductor Devices, Supercomputing Review, pp. 29-33, June (1991)

350. M. S. Shur, Split-gate Field Effect Transistor, United States Patent 5,012,315, April 30 (1991)

351. B. Gelmont, M. S. Shur, and R. J. Mattauch, Capacitance-Voltage Characteristics of Microwave Schottky Diodes, IEEE Trans. Microwave Theory and Technique, vol. 39, No. 5, pp. 857-863 May (1991)

352. B. Moon, C. Park, K. Rho, K. Lee, M. S. Shur, and T. A. Fjeldly, New Analytical Model for p-Channel MOSFETs, IEEE Trans. Electron Devices, ED-38, No. 12, pp. 2632-2646, Dec. (1991)

353. J. Xu, M. S. Shur, and M. Sweeny, Electronic and Optoelectronic Laser Devices Utilizing Light Hole Properties, United States Patent, # 4,999,682, March 12 (1991)

354. M. Hack, J. G. Shaw, and M. S. Shur, Vertical Thin Film Transistor and Optical Sensor Having Leakage Current Suppression Elements, Patent 4,996,553, Feb. 26 (1991)

355. T. A. Fjeldly and M. S. Shur, Unified CAD Models for HFETs and MESFETs, in Workshop Proceedings, 21st European Microwave Conference, Stuttgart, pp. 198-205, September (1991)

356. F. L. Schuermeyer, M. S. Shur, and D. E. Grider, Gate Current in Self-Aligned p-channel Pseudomorphic Heterostructure Field Effect Transistors, IEEE Electron Device Letters, vol. 12, No. 10, pp. 571-573, October (1991)

357. M. S. Shur and T. A. Fjeldly, Foreword (editorial), in Proceedings of the Symposium on Supercomputer Simulation of Semiconductor Devices, Minneapolis, MN, Nov. 1990, Computer Physics Communications, vol. 67, No. 1, pp. R5-R6 (1991)

358. G. Kelner and M. S. Shur, SiC Field Effect Transistors, pp. 745-749, in Proceeding of The First International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. (1991)

359. Y. H. Byun, M. S. Shur, M. Hack, and K. Lee, New Analytical Poly-Silicon Thin-Film Transistor Model for CAD and Parameter Characterization, pp. 537-540, in Proceeding of The First International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. (1991)

360. T. Lauterbach, M. S. Shur, K. H. Bachem, and W. Pletschen, Emitter-Base Electron Transport in GaInP/GaAs Heterojunction Bipolar Transistors and Tunnel Emitter Bipolar Transistors, pp. 721-724, in Proceeding of The First International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. (1991)

361. B. Gelmont and M. S. Shur, Low Threshold Laser Utilizing Junction Between Two-Dimensional Electron Gas and p-type Semiconductor, in Proceeding of The First International Semiconductor Device Research Symposium, pp. 193-196, Charlottesville, VA, Dec. (1991)

362. T. A. Fjeldly, M. S. Shur, T. Y. Ytterdal, and K. Lee, Unified CMOS Model for Circuit Simulation, in Proceeding of The First International Semiconductor Device Research Symposium, pp. 407-410, Charlottesville, VA, Dec. (1991)

363. T. Ytterdal, K. Lee, M. S. Shur, and T. A. Fjeldly, AIM-Spice, a New Circuit Simulator Based on a Charge Control Model, in Proceeding of The First International Semiconductor Device Research Symposium, pp. 481-484, Charlottesville, VA, Dec. (1991)

365. M. Kanamori, G. Jensen, M. S. Shur, and K. Lee, Effect of p-buffer on characteristics of n-channel Heterostructure Field Effect Transistors, IEEE Transactions on Electron Devices, vol. 39, No. 2, pp. 226-233 (1992)

366. J. Zou, H. Dong, A. Gopinath, and M. S. Shur, Performance and Optimization of Dipole Heterostructure Field Effect, IEEE Trans. Electron Devices, IEEE Trans. Electron Devices, ED-39, No. 2, pp. 250-256, Feb. (1992)

367. T. A. Fjeldly, B. Moon, and M. S. Shur, Iterative solutions for the Generalized Diode Equation, IEEE Trans. Electron Devices, ED-39, No. 52, pp. 1269, May (1992)

368. B. Gelmont, M. S. Shur, and C. Moglestue, Theory of Junction between Two-Dimensional Electron Gas and p-type Semiconductor, IEEE Trans. Electron Devices, ED-39, No. 52, pp. 1216-1222, May (1992)

369. W. C. B. Peatman, T. W. Crowe, and M. S. Shur, A Novel Schottky/2-DEG Diode for Millimeter and Submillimeter Wave Multiplier Applications, IEEE Electron Device Letters, vol. 13, No. 1, pp. 11-13, Jan. (1992)

370. P. C. Chao, M. S. Shur, M. Y. Kao, and B. R. Lee, Breakdown Walkout in AlGaAs/GaAs HEMTs, IEEE Trans. Electron Devices, vol. 39, No. 3, pp. 738-740, March (1992)

371. Y. H. Byun, M. S. Shur, M. Hack, and K. Lee, New Analytical Poly-Silicon Thin-Film Transistor Model for CAD and Parameter Characterization, Solid State Electronics, vol. 35, No. 5, pp. 655-663, May (1992)

372. T. Globus, M. S. Shur, Y. Byun, and M. Hack, New Split FET Technique for Measurements of Source Series Resistance Applied to Amorphous Silicon Thin Film Transistors, IEEE Electron Device Letters, vol. 13, No. 2, pp. 108-110, February (1992)

373. K. Bhaumik, B. Gelmont, R. J. Mattauch, and M. S. Shur, Series Impedance of GaAs Planar Schottky Diodes Operated to 500 GHz, IEEE Trans. Microwave Theory and Technique, vol. 40, No. 5, pp. 880-885, May (1992)

374. B. Gelmont, B. Lund, K.-S. Kim, G. U. Jensen, M. S. Shur, and T. A. Fjeldly, Monte Carlo Simulation of Electron Transport in Mercury Cadmium Telluride", Journal of Applied Physics, vol. 71, No 10, pp. 4977-4982, May 15 (1992)

375. M. S. Shur, Split-gate Field Effect Transistor, United States Patent 5,079,620, January 7 (1992)

376. S. H. Jones, G. B. Tait, and M. S. Shur, Modulated-Impurity-Concentration Transferred-Electron Devices Exhibiting Large Harmonic Frequency Content, Microwave and Optical Technology Letters, vol. 5, No. 8, pp. 354-359, July (1992)

377. J. Conger, A. Peczalski, and M. S. Shur, Temperature Modeling of GaAs DCFL, International Journal of High Speed Electronics, vol. 3, No. 2, pp. 171-199, June (1992)

378. M. S. Shur, Studies of Electric Domains, Doctoral Dissertation (D. Sc. Thesis, Habilitation), (in Russian), A. F. Ioffe Phys. Tech. Institute of the Russian Acad. of Sciences, St. Petersburg (1992)

379. B. Lund, T. A. Fjeldly, and M. S. Shur, The Monte Carlo Technique as a Testing Ground for New Device Concepts, in Proceedings of International Symposium on Signals, Systems, and Electronics (ISSSE-92), URSI, pp. 605-609, Paris, Sep. 1992

380. M. S. Shur, T. Fjeldly, Y. Ytterdal, and K. Lee, Unified GaAs MESFET Model for Circuit Simulations, International Journal of High Speed Electronics, vol. 3, No. 2, pp. 201-233, June (1992)

381. T. Globus, M. S. Shur, and M. Hack, Studies of the Stability of Amorphous Silicon Thin Film Transistors, Material Res. Soc. Symposium Proc., vol. 258, p. 1013-1018 (1992)

382. F. L. Schuermeyer, E. Martinez, M. S. Shur, D. E. Grider, and J. Nohava, Subthreshold and Above Threshold Gate Current in Heterostructure Insulated Gate Field Effect Transistors, Electronics Letters, vol. 28, No. 11, pp. 1024-1025 (1992)

383. S. H. Kim, K. S. Min, S. W. Hong, K. R. Lee, M. S. Shur, and T. A. Fjeldly, AIM-Spice FET Device Models: New Device Modeling in VLSI Era, in Proceedings of International Symposium on Signals, Systems, and Electronics (ISSSE-92), URSI, pp. 615-619, Paris, Sep. 1992

384. K. S. Kim, B. Gelmont, and M. S. Shur, Monte Carlo Calculation for Gallium Nitride, in Proceedings of the International Workshop on Computational Electronics, Beckman Institute, University of Illinois at Urbana-Champaign, Illinois, May 28-29, 1992, pp. 213-216

385. B. Gelmont, K. S. Kim, and M. S. Shur, Doping Dependence of Breakdown Field in Hg1-x CdxTe, in Proceedings of the International Workshop on Computational Electronics, Beckman Institute, University of Illinois at Urbana-Champaign, Illinois, May 28-29, 1992, pp. 205-208

386. J. Conger, M. S. Shur, and A. Peczalski, Power Law GaAs MESFET Model, IEEE Trans. Electron Devices, vol. 39, No. 10, pp. 2415-2417, October (1992)

387. B. Gelmont, K.-S. Kim, and M. S. Shur, Theory of Impact Ionization and Auger Recombination in HgCdTe, Phys. Rev. Lett., vol. 69, No. 8, pp. 1280-1282, August (1992)

388. M. S. Shur and K. Lee, Field-Effect Compound Semiconductive Transistor with GaAs gate to increase barrier height and reduce turn-on voltage, United States Patent # 5,161,235, Nov. 3 (1992)

389. P. Rabkin, M. S. Shur, and P. Blakey, DC and AC Analysis of a Silicon Carbide HJFET, Simulation Standards, vol. 3, No. 5, pp. 2-3, October (1992)

390. M. S. Shur, T. A. Fjeldly, T. Ytterdal, and K. Lee, Unified MOSFET Model, Solid State Electronics, vol. 35, No. 12, pp. 1795-1802, Dec. (1992)

391. T. Globus, M. S. Shur, and M. Hack, Studies of Subthreshold and Leakage Current in Amorphous Silicon Thin Film Transistors, in Proceedings of the First Symposium on Thin Film Transistor Technology, Edited by Yue Kuo, Dielectric Science and Technology Divisions, Proceedings Volume 92-24, The Electrochemical Society, inc., 10 South Main Street, Pennington NJ 08534-2896, ISBN 1-56677-053-X, (1992), pp. 70-78

392. W. Peatman, T. Crowe, M. S. Shur, and B. Gelmont, A Schottky/2-DEG Varactor Diode for Millimeter and Submillimeter Wave Multiple Applications, Proc. 3rd Int'l. Conf. Space THz Tech., University of Michigan, Ann Arbor, Michigan, pp. 93-109, May 1992

393. K. M. Rho, K. Lee, M. S. Shur, and T. A. Fjeldly, Unified Quasi-Static MOSFET Capacitance Model, IEEE Trans. Electron Devices, vol. 40, No. 1, pp. 131-136, Jan. (1993)

394. T. A. Fjeldly and M. S. Shur, Threshold Voltage Modeling and the Subthreshold Regime of Operation of Short-Channel MOSFETs, IEEE Trans. Electron Devices, vol. 40, No. 1, pp. 137-145, Jan. (1993)

395. B. Gelmont and M. S. Shur, Spreading Resistance of a Round Ohmic Contact, Solid State Electronics, vol. 36, No. 2, pp. 143-146 (1993)

396. M. S. Shur and T. A. Fjeldly, HEMT Modeling, in Compound Semiconductor Device Modeling, C. Snowden and R. Miles, Editors, Springer Verlag, London (1993), pp. 56-73

397. M. S. Shur, Gunn and IMPATT Diode Modeling, in Compound Semiconductor Device Modeling, C. Snowden and R. Miles, Editors, Springer-Verlag, London (1993), pp. 87-103

398. K. Lee, M. S. Shur, T. A. Fjeldly, and T. Ytterdal, Semiconductor Device Modeling for VLSI, Prentice Hall, Englewood Cliffs, NJ (1993)

399. M. S. Shur, Transistor, McGraw-Hill Yearbook of Science and Technology, pp. 443-446 (1993)

400. B. Gelmont, K. S. Kim, and M. S. Shur, Monte Carlo Calculation of Electron Transport in Gallium Nitride, J. Appl. Phys., 74 (3), pp. 1818-1821, 1 August (1993)

401. B. Gelmont, W. Peatman, M. S. Shur, Heterodimensional Schottky Metal-Two Dimensional Electron Gas Interfaces, J. Vac. Sci. Technol. B11 (4), pp. 1670-1674, July/August (1993)

402. M. S. Shur, Future Impact of Solid State Technology of Computers, Computer, vol. 26, No. 4, pp. 103-104, April (1993)

403. G. L. Tan, J. M. Xu, and M. S. Shur, A GaAs/AlGaAs Double-Heterojunction Lateral PIN Ridge Waveguide Laser, Optical Engineering, 32, No. 9, pp. 2042-2045, 1993 (Invited)

404. M. S. Shur, Getting to Know Semiconductors. (Book Review), American J. Phys., vol. 61, No. 8, p. 765, August (1993)

405. P. Rabkin, R. Cottle, M. S. Shur, and P. Blakey, The Forward and Reverse Characteristics of Silicon Carbide Diodes at High Temperatures, Simulation Standards, vol. 4, No. 3, pp. 6-7, May/June (1993)

406. M. Shur, K. Lee, T. A. Fjeldly, and T. Ytterdal, "Computer Aided Design for Si and GaAs Integrated Circuits", '93 Korea-US IC Design Automation and Manufacturing Workshop, Nov 17-20, 1993, Taejon, Korea, pp. 71-80.

407. M. Dyakonov and M. S. Shur, Shallow Water Analogy for a Ballistic Field Effect Transistor. New Mechanism of Plasma Wave Generation by DC Current, Phys. Rev. Lett., vol. 71, No. 15, pp. 2465-2468, Oct. 11 (1993)

408. M. S. Shur, K. Lee, W. C. B. Peatman, and B. Gelmont, Novel Semiconductor Devices for High Speed VLSI AND Ultra-High Frequency Applications, ICVC Proceedings, pp. 444-449, Tajeon, Korea © 1993, KITE(1993) (Invited)

409. W. C. B. Peatman, H. Park, B. Gelmont, M. S. Shur, P. Maki, E. R. Brown, and M. J. Rooks, Novel Metal/2-DEG Junction Transistors, in Proceedings of 1993 IEEE/Cornell Conference, Ithaca, Cornell (1993), pp. 314-319

410. A. Bykhovski, B. Gelmont, and M. S. Shur, The Influence of the Strain-Induced Electric Field on the Charge Distribution in GaN-AlN-GaN SIS Structure, J. Appl. Phys. Dec., vol. 74 (11), p. 6734 (1993)

411. A. Bykhovski, B. Gelmont, and M. S. Shur, Strain and Charge Distribution in GaN-AlN-GaN SIS Structure for Arbitrary Growth Orientation, Appl. Phys. Lett., vol. 63, p. 2243 (1993)

412. B. Moon, S. Lee, M. S. Shur, H. Morkoc, and A. Gopinath, Measurements of Gate Voltage Dependence of Electron Mobility in d-Doped HFETs, IEEE Trans. Electron Devices, ED-40, No. 9, pp. 1711-1713 (1993)

413. E. Martinez, F. L. Schuermeyer, M. S. Shur, and C. Cerny, Factors determining the Gate Leakage Current in Different Heterostructure Field effect Transistor Technologies, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, VA, December, pp. 799-802 (1993)

414. W. C. B. Peatman, B. Gelmont, W. L. Grimm, H. Park, M. S. Shur, E. R. Brown, and M. J. Rooks, Heterodimensional Schottky-Gate Devices, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, VA, December, pp. 427-430 (1993)

415. P. Rabkin, R. Cottle, P. A. Blakey, and M. S. Shur, 2D Simulation of DC, AC, and Breakdown Characteristics of Bipolar and Unipolar Silicon Carbide Devices, in Proceedings of International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 1-3, pp. 569-572 (1993)

416. A. Bykhovski, B. Gelmont, M. S. Shur, and M. Spencer, Piezoelectric effects in SiC/AlN/SiC Structures, in Proceedings of International Semiconductor Device Research Symposium, Charlottesville, VA, Dec. 1-3, pp. 581-584 (1993)

417. M. Dyakonov and M. S. Shur, Ballistic FET as Tunable Terahertz Oscillator, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, VA, December, pp. 741-744 (1993)

418. M. S. Shur, M. Hack, and Y. H. Byun, Circuit Model and Parameter Extraction Technique for Polysilicon Thin Film Transistors, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, VA, pp. 165-168, December (1993)

419. T. Globus, M. S. Shur, and M. Hack,Temperature Dependence of Leakage Current in a-Si Thin Film Transistors, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, pp. 43-46, VA, December (1993)

420. T. Ytterdal, T. Steen, M. S. Shur, and T. A. Fjeldly, GaAs MESFET Model for a Wide Range of Temperatures, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, VA, December, pp. 121-124 (1993)

421. T. Ytterdal, T. A. Fjeldly, M. S. Shur, and K. Lee, Speed and Convergence Properties of Improved MOSFET Models Included in the Circuit Simulator AIM-Spice, in Proc. of 2d Internat. Semicond. Device Research Symp., Charlottesville, VA, December pp. 345-348 (1993)

422. B. Lund, P. Robertson, and M. S. Shur, Parameter Extraction Technique for Novel Unified HFET Device Model, in Proceedings of 2d International Semiconductor Device Research Symposium, Charlottesville, VA, December, pp. 543-546 (1993)

423. M. S. Shur, B. Gelmont, C. Saavedra-Munoz, and G. Kelner, Potential of Wide Band Gap Semiconductor Devices for High Temperature Applications, Invited, in Proceedings of 5th Conference "Silicon Carbide and Related Compounds", Institute of Physics Conference Series Number 137, Institute of Physics Publishing, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, Eds., Bristol and Philadelphia (1994), pp. 691-694

424. A. Bykhovski, B. Gelmont, M. S. Shur, and A. Khan, Strain and Charge Distribution in GaN/AlN/GaN SIS Structure, in Proceedings of 5th Conference "Silicon Carbide and Related Compounds, Institute of Physics Conference Series Number 137, Institute of Physics Publishing, M. G. Spencer, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, Eds., Bristol and Philadelphia (1994), pp. 691-694

425. M. S. Shur and T. A. Fjeldly, Device and Circuit Modeling of GaAs-based Transistors, in the Proceedings of 20th International Symposium on GaAs and Related Compounds, Freiburg, Germany, Aug. 29- Sep. 2, 1993, Institute Conference Series No 136, Chapter 2, pp. 21 - 28 (1994)

426. G. Kelner and M. S. Shur, Junction Field Effect Transistor with Lateral Gate Voltage Swing (GVS-JFET), United States Patent 5,309,007, May 1994

427. J. Conger, A. Peczalski, and M. S. Shur, Modeling Frequency Dependence of GaAs MESFET Characteristics, IEEE Journal of Solid State Circuits, vol. 29, No. 1, pp. 71-76 (1994)

428. E. Martinez, M. S. Shur, and F. L. Schuermeyer, Heterostructure Field Effect Transistors Operated in Hot Electron Regime, IEEE Trans. Electron Devices, vol. 41, No. 5, pp. 854-856 (1994)

429. W. C. B. Peatman, H. Park, and M. S. Shur, Novel Two-Dimensional Metal-Semiconductor Field Effect Transistor (2-D MESFET) for Ultra Low Power Circuit Applications, IEEE Electron Device Letters, vol. 15, No. 7, pp. 245-247, July (1994)

430. W. C. B. Peatman, E. R. Brown, M. J. Rooks, P. Maki, W. J. Grimm, and M. S. Shur, Novel Resonant Tunneling Transistor with High Transconductance at Room Temperature, IEEE Electron Device Letters, vol. 15, No. 7, pp. 236-238, July (1994)

431. T. Globus, H. C. Slade, M. S. Shur, and M. Hack, Density of Band Gap States in Amorphous Silicon from the Temperature Dependence of Thin Film Transistor Current, Mat. Res. Soc. Symp. Proc., vol. 336, pp. 823-829 (1994)

432. F. L. Schuermeyer, M. S. Shur, E. Martinez, and C. Cerny, Gate Currents in Heterostructure Field Effect Transistor Transistors: Contribution by "Warm" Electrons, Material Science and Engineering, B28, pp. 264-267 (1994)

433. M. A. Khan, J. N. Kuznia, D. T. Olson, W. Schaff, J. Burm, M. S. Shur, Microwave Performance of 0.25 micron gate AlGaN/GaN Heterostructure Field Effect Transistor, Applied Physics Letters, vol. 65 (9), pp. 1121-1123 (1994)

434. T. Ytterdal, M. S. Shur, and T. A. Fjeldly, Sub-MOSFET 0.1 µm Modeling and Circuit Simulation, Electronics Letters, vol. 30. No. 18, pp. 1545-1546, Sep. 1 (1994)

435. M. Asif Khan, Michael S. Shur, Q. C. Chen, and J. N. Kuznia, Current-Voltage Characteristic Collapse in AlGaN/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias, Electronics Letters, vol. 30, No. 25, p. 2175, Dec. 8, 1994

436. M. S. Shur, M. D. Jacunski, and M. Hack, Device and Circuit Models for Amorphous Silicon and Polysilicon Thin Film Transistors Used in High Definition Display Technology, in Proceedings of the International Conference on Information Displays, Monterey, CA, October 18-22 (1994), pp. 45-55 (Invited)

437. M. Asif Khan, J. N. Kuznia, S. Krishnankutty, R. A. Scogman, D. T. Olson, W. J. Schaff, J. W. Burm, M. S. Shur, and T. George, Electronic and Optoelectronic Devices Based on GaN/AlGaN Heterostructures, MRS Proceedings, vol. 339, pp. 1663-171, Diamond, SiC, Nitride Wide Band Gap Semiconductors, Editors C. H. Carter, G. Gildenblat, S. Nakamura, and R. Nemanich, MRS, Pittsburgh PA (1994)

438. H. C. Slade, B. Gelmont, T. Globus, M. S. Shur, and M. Hack, Effect of Stress on the Density of Deep Localized States in Amorphous Silicon Thin Film Transistors, Electrochemical Society Proceedings, vol. 94-35, pp. 207-219, the Fall Meeting, Florida, October (1994)

439. M. I. Dyakonov and M. S. Shur, New Hydrodynamic Phenomena in Electronic Fluid, in "22nd International Conference on the Physics of Semiconductors", D. J. Lockwood, Editor, World Scientific, vol. 1, pp. 811-814 (1995)

440. M. S. Shur, W. C. B. Peatman, H. Park, W. Grimm, and M. Hurt, Novel Heterodimensional Diodes and Transistors, Solid State Electronics, vol. 38, No. 9, pp. 1727-1730, Sep. (1995)

441. B. Gelmont, M. S. Shur, and M. Stroscio, Polar Optical phonon scattering in three- and two-dimensional electron gases, J. Appl. Phys., 77 (2), pp. 657-660, 15 Jan. (1995)

442. A. Bykhovski, B. Gelmont, M. S. Shur, and A. Khan, Current-Voltage Characteristics of Strained Piezoelectric Structures, J. Appl. Phys., vol. 77(4), Feb. 15, p. 1616-1620 (1995)

443. M. A. Khan, M. S. Shur, J. N. Kuznia, J. Burm, W. Schaff, Temperature Activated Conductance in GaN/AlGaN Heterostructure Field Effect Transistors Operating at Temperatures up to 300 oC, Applied Physics Letters, 66,(9), pp. 1083-1085, 27 Feb. (1995)

444. G. Kelner, M. S. Shur, and G. L. Harris, SiC Devices and Ohmic Contacts, chapter in "Properties of Silicon Carbide", G. Harris, Editor, pp. 231-273, INSPEC, IEE, United Kingdom, 1995

445. B. Gelmont, M. S. Shur, and R. J. Mattauch, Disk and Stripe Capacitances, Solid State Electronics, vol. 38, No. 3, pp. 731-734 (1995)

446. M. S. Shur, A. Khan, B. Gelmont, R. J. Trew, and M. W. Shin, GaN/AlGaN Field Effect Transistors for High Temperature Applications, Inst. Phys. Conf. Ser. No 141: Chapter 4, pp. 419-424, (1995) Invited paper presented at Int. Symp. Compound Semicond., San Diego, CA, 18-22 Sept., 1994

447. M. S. Shur and M. A. Khan, Optoelectronic GaN-based field effect transistors, in Optoelectronic Materials, Devices, and Integrated Circuits, Proc. SPIE 2397, Feb. 7 (1995) (Invited)

448. M. A. Khan, Q. Chen, C. J. Sun, M. S. Shur, M. F. Macmillan, R. P. Devaty, and J. Choyke, Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices, in Optoelectronic Materials, Devices, and Integrated Circuits, Proc. SPIE 2397, 283 (1995)

449. M. Dyakonov and M. S. Shur, Choking of Electron Flow - A Mechanism of Current Saturation in Field Effect Transistors, Phys. Rev. B, vol. 51, No. 20, pp. 14341-14345, 15 May (1995)

450. M. Asif Khan, Michael S. Shur, Q. Chen, J. N. Kuznia, and C. J. Sun, Gated Photodetector Based on GaN/AlGaN Heterostructure Field Effect Transistor, Electronics Letters, vol. 31, No. 5, pp. 398-400, March 2, (1995)

451. E. Martinez, F. Schuermeyer, C. Cerny, and M. S. Shur, Twin-Tub Complementary Heterostructure Field Effect Transistor Fab Process, United States Patent, 5,429,963, July 4, 1995

452. Y. Ytterdal, B.-J. Moon, T. Fjeldly, and M. S. Shur, Enhanced GaAs MESFET CAD Model for a Wide Range of Temperatures, IEEE Trans. Electron Devices, 42, No 10, pp. 1724-1734, October (1995)

453. T. Fjeldly and M. S. Shur, Simulation and Modeling of Compound Semiconductor Devices, International Journal of High Speed Electronics and Systems, vol. 6, No. 1, pp. 237-284 (1995)

454. M. S. Shur, Introduction, Special Issue on "Compound Semiconductor Electronics, International Journal of High Speed Electronics and Systems, vol. 6, No. 1, pp. III-VIII (1995)

455. W. C. B. Peatman, M. Hurt, H. Park, R. Tsai, and M. S. Shur, Narrow Channel 2-D MESFET for Low Power Electronics, IEEE Trans. Electron Devices, 42, No. 9, pp. 1569-1573, September (1995)

456. B. Gelmont and M. S. Shur, Hall Factor for Ionized Impurity Scattering, J. Appl. Phys., vol. 78, N4, Aug. 15, pp. 2846- 2847 (1995)

457. M. Dyakonov and M. S. Shur, High Electron Mobility Transistor as Electronic Flute, 1995 Conference Proceeding of International Symposium on Signals, Systems and Electronics, pp. 219-222, URSI, ISBN 0-7083-2516-8, Technical Digest, San Francisco, 1995

458. W. Peatman, M. Hurt, R. Tsai, T. Ytterdal, H. Park, J. Gonzalez, M. S. Shur, Heterodimensional Technology for Ultra Low Power Electronics, 1995 Conference Proceeding of International Symposium on Signals, Systems and Electronics, pp. 163-166, URSI, ISBN 0-7083-2516-8, Technical Digest, San Francisco, 1995

459. E. Martinez, M. S. Shur, and F. Schuermeyer, Analysis of the Hot Electron Regime of Operation in Heterostructure Field Effect Transistors, 1995 Conference Proceeding of International Symposium on Signals, Systems and Electronics, pp. 167-170, URSI, ISBN 0-7083-2516-8, Technical Digest, San Francisco, 1995

460. M. I. Dyakonov and M. S. Shur, Two Dimensional Electronic Flute, Applied Physics Letters, vol. 67 (8), August 21, pp. 1137-1139, 1995

461. M. Asif Khan, Q. Chen, and C. J. Sun, M. S. Shur, and B. L. Gelmont, 2-Dimensional Electron Gas in GaN-AlGaN Heterostructures Deposited Using Trimethylamine-Alane as the Aluminum Source in Low Pressure Metalorganic Chemical Vapor Deposition, Appl. Phys. Lett., vol. 67, No. 10, Sep. 4, pp. 1429-1431 (1995)

462. A. Bykhovski, B. Gelmont, and M. S. Shur, Elastic Strain Relaxation in GaN-AlN-GaN Semiconductor-Insulator-Semiconductor Structures, J. Appl. Phys., 78 (6), pp. 3691-3696, 15 September (1995)

463. H. Slade, M. S. Shur and M. Hack, Incorporation of Stress Effects into a-Si TFT Model for use in Circuit Simulators, Abstract # 535, pp. 861-862, in Extended Abstracts, vol. 95-2, Fall Meeting, Chicago, Illinois, Oct. 8-13, 1995, The Electrochemical Society, inc., New Jersey (1995)

464. M. S. Shur and M. Asif Khan, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, in Proceeding of the Symposium on Wide Band Gap Semiconductors and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII), F. Ren, D. N. Buckley, S. J. Pearton, P. Van Daele, G. C. Chi, T. Kamijoh, and F. Schuermeyer, Editors, Proceedings Volume 95-21, pp. 128-135, The Electrochemical Society, inc., New Jersey (1995), see also M. S. Shur and M. Asif Khan, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, Abstract # 555, pp. 892-893, in Extended Abstracts, Vol. 95-2, Fall Meeting, Chicago, Illinois, Oct. 8-13, 1995, The Electrochemical Society, inc., New Jersey (1995)

465. M. S. Shur and M. Asif Khan, Electronic and Optoelectronic AlGaN/GaN Heterostructure Field Effect Transistors, Abstract # 555, pp. 892-893, in Extended Abstracts, vol. 95-2, Fall Meeting, Chicago, Illinois, Oct. 8-13, 1995, The Electrochemical Society, inc., New Jersey (1995)

466. M. E. Levinshtein, S. L. Rumyantsev, G. S. Simin, H. Park, W. C. B. Peatman, and M. S. Shur, Low Frequency Noise in Two-Dimensional Metal-Semiconductor Field Effect Transistor, in Proceedings of International Semiconductor Device Research Symposium, vol. I, pp. 343 -346, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995

467. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, I. Adesida, A. T. Ping, and M. Shur, Processing and characterization of GaN-AlGaN based electronic and optoelectronic devices, in Proceedings of International Semiconductor Device Research Symposium, vol. II, pp. 535-538, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995 (invited)

468. M. I. Dyakonov and M. S. Shur, Terahertz Devices using Two Dimensional Electron Fluid: Sources, Detectors, Multipliers, and Mixers, in Proceedings of International Semiconductor Device Research Symposium, vol. II, pp. 455-458, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995 (invited)

469. M. J. Hurt, W. C. B. Peatman, R. Tsai, B. J. Moon, T. Ytterdal, and M. S. Shur, Comparison of 2-D and 3-D Side-gated FETs, in Proceedings of International Semiconductor Device Research Symposium, vol. I, pp. 79 -82, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995

470. B. L. Gelmont, M. S. Shur, and R. J. Mattauch, Theory of Dark Resistance in Photodiodes for Arbitrary Diode Geometry, in Proceedings of International Semiconductor Device Research Symposium, vol. I, pp. 277 - 280, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995

471. J. Robertson, T. Ytterdal, W. C. B. Peatman, R. Tsai, E. Brown, and M. S. Shur, 2-D MESFET/RTD Logic Element for Compact, Ultra Low-Power Electronics, in Proceedings of International Semiconductor Device Research Symposium, vol. I, pp. 365 - 368, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995

472. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, Elastic Strain Relaxation in GaN-AlN Superlattices, in Proceedings of International Semiconductor Device Research Symposium, vol. II, pp. 541-544, Charlottesville, VA, ISBN 1-880920-04-4, Dec., 1995

473. M. Asif Khan, M. Shur, and Q. Chen, High Transconductance AlGaN/GaN Optoelectronic Heterostructure Field Effect Transistor, Electronics Letters, vol. 31, No. 24, pp. 2130-2131, Nov. 23 (1995)

474. M. E. Levinshtein and M. S. Shur, Editors, Best of Soviet Semiconductor Physics and Technology (1989-1990), World Scientific, Singapore (1995)

475. M. D. Jacunski, M. S. Shur, A. A. Owusu, T. Ytterdal, and M. Hack, SPICE Models for N and P Channel Polysilicon Thin Film Transistors in All Regimes of Operation, in the AMLCDs 95 Workshop Proceedings, pp. 134-135, September (1995)

476. M. D. Jacunski, M. S. Shur, Drain Current and Capacitance Simulation of Polysilicon Thin Film Transistors, Semicad∆ Device Application Note, Dawn Technologies, inc., 1995

477. H. Slade, M. S. Shur, and M. Hack, Temperature-dependent Analytical Model of a-Si Thin Film Transistors Suitable for Implementation in SPICE, Mat. Res. Soc. Conf. Proc., Vol. 377, p. 861-866 (1995)

478. M. S. Shur, M. D. Jacunski, H. Slade, and M. Hack, Analytical Models for Amorphous-Silicon and Polysilicon Thin-Film Transistors for High Definition Display Technology, in Journ. Society for Information Display, vol. 3, No. 4, pp. 223-236, Dec. (1995)

479. M. S. Shur and Y. S. Park, ISCS-22 22nd International Symposium on Compound Semiconductors, Compound Semiconductors, vol. 8, No. 6, pp. 22- 24 (1995)

480. M. Hurt, M. S. Shur, W. C. B. Peatman, and P. B. Rabkin, Quasi-three-dimensional Modeling of a Novel 2-D MESFET, IEEE Trans. Electron Devices, vol. 43, No. 2, pp. 358-359, February (1996)

481. M. Dyakonov and M. S. Shur, Detection and Mixing of Terahertz Radiation by Two Dimensional Electronic Fluid, in the Proceedings of 22d International Symposium on GaAs and Related Compounds, Cheju, Korea, Aug. 28- Sep. 1, 1995, Institute Conference Series No 145, Chapter 5, pp. 785-790 (1996)

482. F. Schuermeyer, J. P. Loehr, R. E. Sheriff, C. Cerny, and M. S. Shur, Photoelectric measurements of interband transitions in fully fabricated pseudomorphic high electron mobility transistors, in the Proceedings of 22d International Symposium on GaAs and Related Compounds, Cheju, Korea, Aug. 28- Sep. 1, 1995, Institute Conference Series No, pp. (1996)

483. T. Ytterdal, B-J. Moon, T. A. Fjeldly and M. S. Shur, " GaAs MESFET Model for the Temperature Range from 4 K to 625 K", in Compound Semiconductors 1995, Inst. Phys. Conf. Ser. No. 145: Chapter 5, pp. 711-716, IOP Publishing Ltd. (1996). (Presented at Cheju Island, Korea, Aug./Sept., 1995)

484. M. E. Levinshtein, H. Park, W. C. B. Peatman, S. L. Rumyantsev, G. S. Simin, and M. S. Shur, Low Frequency Noise In Two-Dimensional Metal-Semiconductor Field Effect Transistors, Appl. Phys. Lett, 68 (22), May 27, 1996

485. M. S. Shur, B. Gelmont, and M. Asif Khan, High Electron Mobility in Two-Dimensional Electrons Gas in AlGaN/GaN Heterostructures and in Bulk GaN, J. Electronic Materials, vol. 25, No. 5, pp. 777-785 May (1996)

486. M. Asif Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. Blasingame, M. S. Shur, and H. Park, Enhancement and Depletion Mode GaN/AlGaN Heterostructure Field Effect Transistors, Appl. Phys. Lett., 68 (4), pp. 514-516, January 22 (1996)

487. T. Ytterdal, M. Hurt, M. S. Shur, H. Park, R. Tsai, and W. C. B. Peatman, High-Temperature Characteristics of Two-Dimensional MESFETs, IEEE Electron Device Lett., vol. 17, No. 5, May, pp. 214-216 (1996)

488. W. C. B. Peatman, R. Tsai, T. Ytterdal, M. Hurt, H. Park, J. Gonzales, and M. S. Shur, Sub-half-micron Width 2-D MESFET, IEEE Electron Device Lett., vol. 17, No. 2, pp. 40-42, Feb. (1996)

489. M. S. Shur, Wide Band Gap Semiconductors. Good Results and Great Expectations, pp. 279-290, in Proceedings of NATO Advanced Research Workshop, Ile de Bendor, France, July (1995), Future Trends in Microelectronics. Reflection on the Road to nanotechnology, edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky, NATO ASI series, Series E: Applied Sciences - vol. 323, Kluwer Academic Publishers, Dordrecht/ Boston/ Lisbon (1996)

490. M. I. Dyakonov and M. S. Shur, Field Effect Transistor as Two Dimensional Electronic Flute, pp. 251-262, in Proceedings of NATO Advanced Research Workshop, Ile de Bendor, France, July (1995), Future Trends in Microelectronics. Reflection on the Road to nanotechnology, edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky, NATO ASI series, Series E: Applied Sciences - vol. 323, Kluwer Academic Publishers, Dordrecht/ Boston/ Lisbon (1996)

491. M. S. Shur, W. C. B. Peatman, M. Hurt, R. Tsai, T. Ytterdal, and H. Park, Heterodimensional Technology for Ultra Low Power Electronics, in Proceedings of NATO Advanced Research Workshop, Ile de Bendor, France, July (1995), pp. 263-268, Future Trends in Microelectronics. Reflection on the Road to nanotechnology, edited by Serge Luryi, Jimmy Xu, and Alex Zaslavsky, NATO ASI series, Series E: Applied Sciences - vol. 323, Kluwer Academic Publishers, Dordrecht/ Boston/ Lisbon (1996)

492. K. Y. Lee, B. Lund, T. Ytterdal, P. Robertson, E. Martinez, J. Robertson, and M. Shur, Enhanced CAD Model for Gate Leakage Current in Heterostructure Field Effect Transistors, IEEE Transactions on Electron Devices, vol. 43, No. 6, pp. 845-851, June (1996)

493. R. Tsai, F. Schuermeyer, W. Peatman, and M. S. Shur, The Optoelectronic Response of Laterally Contacted 2D-MESFET, IEEE Transactions on Electron Devices, vol. ED-43, No. 12, pp. 2300-2301, Dec. (1996)

494. A. D. Bykhovski, V. V. Kaminskii, M. S. Shur, Q. C. Chen, and M. Asif Khan, Piezoresistive Effect in Wurtzite n-type GaN, Appl. Phys. Lett., 68 (6), pp. 818-819 (1996)

495. M. I. Dyakonov and M. S. Shur, Detection, Mixing, and Frequency Multiplication of Terahertz Radiation by Two Dimensional Electronic Fluid, IEEE Transactions on Electron Devices, vol. 43, No. 3, pp. 380-387, March (1996)

496. M. I. Dyakonov and M. S. Shur, Plasma Wave Electronics: Novel Terahertz Devices using Two Dimensional Electron Fluid, Special Issue on Future Directions in Device Science and Technologies, IEEE Transactions on Electron Devices, vol. 43, No. 10, pp. 1640-1646, October (1996)

497. M. A. Khan, M. S. Shur, and Q. Chen, Hall Measurements and Contact Resistance in Doped GaN/AlGaN Heterostructures, Appl. Phys. Lett., vol. 68 (21), pp. 3022-3024, 20 May (1996)

498. Q. Chen, M. A. Khan, J. W. Yang, C. J. Sun, M. S. Shur and H. Park, High Transconductance Heterostructure Field Effect Transistors Based on AlGaN/GaN, Appl. Phys. Lett., 69(6), pp. 794-796, Aug 5, 1996

499. M. Asif Khan, Q. Chen, M. S. Shur, B. T. Dermott and J. A. Higgins, Microwave Operation of GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors, IEEE Electron Device Letters, vol. 17, No. 7, pp. 325-327, July (1996)

500. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Short Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors with 36.1 Cutoff Frequency, Electronics Letters, vol. 32, No. 4, p. 357, Feb. 15 (1996)

501. T. Fjeldly, T. Ytterdal, and M. S. Shur, Metal Semiconductor Field Effect Transistors, in "Compound Semiconductor Technology. The Age of Maturity", World Scientific, 1996, ed. M. S. Shur, ISBN 981-02-2325, pp. 1-24

502. M. S. Shur, Introduction, in "Compound Semiconductor Technology. The Age of Maturity", World Scientific, 1996, ed. M. S. Shur, ISBN 981-02-2325, pp. V-IX

503. M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. S. Shur, Recent Progress in AlGaN/GaN Based Optoelectronic Devices, MRS Fall Meeting (1995), vol. 395, pp. 913-918, invited

504. M. A. Khan, Q. Chen, C. J. Sun, J. W. Yang, and M. S. Shur, Recent Progress in AlGaN/GaN Based Field Effect Transistors, MRS Fall Meeting (1995), invited

505. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, and M. S. Shur, Optoelectronic and Electronic Devices Based on GaN-AlGaN Material System, in Proceedings of Topical Workshop on III-V Nitrides (TWN'95), 21-23 September 1995, Nagoya, Japan, IEEE Publication, I. Akasaki and K. Onabe, Editors, pp. 91-93

506. M. Shur and A. Khan, GaN Based Field Effect Transistors, in "High Temperature Electronics", ed. M. Willander and H. L. Hartnagel, Chapman and Hall, pp. 297-321, London (1996)

507. M. E. Levinshtein and M. S. Shur, Editors, Semiconductor Technology. Processing and Novel Fabrication Techniques, John Wiley and Sons, New York, ISBN 0-471-12792-2, 1997

508. M. J. Hurt, W. C. B. Peatman, M. S. Shur and T. Ytterdal, Heterodimensional Device Technologies, Compound Semiconductor, Vol. 3, No. 2, pp. 35-38, March-April (1997)

509. A. D. Bykhovski, and M. S. Shur. Surface Reconstruction of Zinc- Blende GaN, Appl. Phys. Lett., 69(16), pp. 2397-2399 (1996)

510. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, M. S. Shur, Electronic devices based on GaN-AlGaN Material System, , Inst. Phys. Conf. Ser. No 142: Chapter 6, pp. 985-990, (1996) paper presented at Silicon Carbide and Related Materials Conf. 1995 , Kyoto, Japan

511. M. S. Shur, W. C. B. Peatman, R. Tsai, F. Schuermeyer, and J. Xu, Heterodimensional Optoelectronic and Millimeter Wave Devices, in Proceeding of the 5th Biennial Department of Defense Photonics Conference, AFCEA, March, 1996, McLean, VA, pp. 285-288

512. Michael S. Shur, Introduction to Electronic Devices, John Wiley and Sons, New York, 1996

513. T. Fjeldly and M. S. Shur, Simulation and Modeling of Compound Semiconductor Devices, in "Compound Semiconductor Technology. The Age of Maturity", World Scientific, 1996, ed. M. S. Shur, ISBN 981-02-2325, pp. 317-364

514. B. E. Foutz, L. F. Eastman, U. V. Bhapkar, M. S. Shur, Comparison of High Electron Transport in GaN and GaAs, Appl. Phys. Lett., 70, No 21, pp. 2849-2851, 1997

515. M. A. Khan, Q. Chen, J. W. Yang, C. J. Sun, B. Lim, M. Z. Anwar, M. Blasingame, M. S. Shur and H. Temkin, GaN-InGaN Based Optoelectronic Devices, in Proceedings of Workshop on Blue Light Emitting Diodes and Lasers, Chiba, Japan, March (1996)

516. T. A. Fjeldly, Michael S. Shur, and T. Ytterdal, Device Modeling Issues in Deep-Submicron MOSFETs, Semiconductor International, pp. 131-142 June (1996)

517. E. Martinez, M. S. Shur, and F. Schuermeyer, Gate Current Model for Hot Electron Regime of Operation in Heterostructure Field Effect Transistors, IEEE Transactions, submitted for publication

518. M. J. Hurt, W. C. B. Peatman, R. Tsai, T. Ytterdal, M. S. Shur, and B. J. Moon, An Ion-Implanted 0.4 µm Wide 2-D MESFET for Low Power Electronics, Electronics Letters, vol. 32, No. 8, pp. 772-773, 11 April 1996

519. W. Knap, H. Alause, J. M. Bluet, J. Camassel, J. Young, M. Asif Khan, Q. Chen, S. Huant, and M. Shur, The Cyclotron Resonance Effective Mass of Two-Dimensional Electrons Confined at the GaN-AlGaN Interface, Solid State Comm, 99, No. 3, 195-199 (1996)

520. M. E. Levinshtein, S. Rumyantsev, and M. Shur, Editors, Handbook of Semiconductor Material Parameters, vol. 1, World Scientific, 1996, ISBN981-02-2934-8

521. M. D. Jacunski, M. S. Shur, T. Ytterdal, A. Owusu, and M. Hack, AC and DC Characterization and SPICE Modeling of Short Channel Polysilicon TFTs, Mat. Res. Soc. Symp. Proc. Vol. 424, pp. 213-218 (1997)

522. H. Slade, M. S. Shur, S. C. Deane, and M. Hack, Physics of Below Threshold Current Conduction in Hydrogenated Amorphous Silicon Thin Film Transistors, Mat. Res. Soc. Symp. Proc., Vol. 420, pp.257-262 (1996)

523. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, M. A. Khan, Pyroelectric Effect in Wurtzite Gallium Nitride, in Symposium Proceedings of Material Research Society, vol. 423, pp. 75-79 (1996)

524. M. D. Jacunski, M. S. Shur, and M. Hack, Threshold Voltage, Field Effect Mobility, and gate to Channel Capacitance in Polysilicon TFTs, IEEE Transactions Electron Devices, vol. 43, N0. 9, pp. 1433-1440, Sep. (1996)

525. K. Weiser, F. Dahan, S. E. Schacham, M. Shur, E. Towe, and H. Park, Laser Beam Interference Effects on the Photovoltage of a p-n Junction Diode, J. Appl. Phys., Vol. 80, Issue 9, pp. 5459-5463, November 1, 1996

526. J. C. Zolper, R. J. Shul, A. G. Baca, S. J. Pearton, C. R. Abernathy, R. G. Wilson, R. A. Stall, and M. Shur, III- Nitride Ion Implantation and Device Processing, Electrochemical Society Proceedings, Spring 96, May 6-10, Los Angeles, CA

527. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, CW Operation of Short Channel GaN/AlGaN Doped Channel Heterostructure Field Effect Transistors at 10 GHz and 15 GHz, IEEE Electron Device Lett., vol. 17, No. 12, pp. 584-585, Dec. (1996)

528. M. Dyakonov and M. S. Shur. Plasma Wave Electronics: Terahertz Detectors and Sources using Two Dimensional Electronic Fluid in High Electron Mobility Transistors, in Proceedings of the 21-st International Conference on Microwave and Millimeter Wave Devices, Berlin (1996)

529. M. A. Khan, Q. Chen, M. S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, High Temperature Performance of Doped Channel AlGaN/GaN Heterostructure Field Effect Transistors, in Proceedings of High Temperature Conference, Sandia, Albuquerque, NM, June (1996)

530. M. S. Shur and M. A. Khan, AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors, Physica Scripta, vol. T69, pp. 103-107 (1997)

531. Tor A. Fjeldly, Michael S. Shur and T. Ytterdal, Field Effect Transistor Modeling Issues, Physica Scripta, pp. 30-39 (1997)

532. A. Owusu, M. D. Jacunski, M. S. Shur, and T. Ytterdal, SPICE Model for the Kink Effect in Polysilicon TFTs, Electrochemical Society Proceedings, vol. 96-23, pp. 289-295 (1996)

533. M. S. Shur, M. D. Jacunski, H. C. Slade, A. A. Owusu, T. Ytterdal, and M. Hack, SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors, Electrochemical Society Proceedings, vol. 96-23, pp. 242-259 (1996) (invited)

534. M. Asif Khan, and Michael S. Shur, GaN Based Transistors for High Temperature Applications, Materials Science and Engineering, B, Solid State Materials for Advanced Technology, 46/1-3 pp. 69-73 (1997)

535. M. Asif Khan, Q. Chen, J. Yang, C. J. Sun, B. Lam, H. Temkin, J. Schetzina, and M. S. Shur, UV, Blue And Green Light Emitting Diodes Based On GaN-InGaN Multiple Quantum Wells Over Sapphire and (111) Spinel Substrates, Materials Science and Engineering, B43, pp. 265-268 (1997)

536. R. Weikle, J. Lu, M. S. Shur, M. I. Dyakonov, Detection of Microwave Radiation by Electronic Fluid in High Electron mobility Transistors, Electronics Letters, vol. 32, No. 7, pp. 2148-2149 (1996)

537. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, M. A. Khan, Pyroelectricity in Gallium Nitride Thin Films, Applied Physics Letters, November 18, 69(21), p. 3254 (1996)

538. M. Asif Khan, Q. Chen, J. Yang, C. J. Sun, B. Lam, M. Z. Anwar, M. S. Shur, H. Temkin, B. T. Dermott, J. A. Higgins, J. Burm, W. Schaff, and L. F. Eastman, Visible Light Emitters, Ultraviolet Detectors, and High-Frequency Transistors Based on III-N Alloys, (Invited.) The Physics of Semiconductors ed. by M. Scheffler and R. Zimmermann, pp. 3171-3178 (World Scientific, Singapore 1996)

539. M. Dyakonov and M. S. Shur. Ballistic Transport in High Mobility Semiconductor, The Physics of Semiconductors ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996), pp. 145-148, (1996)

540. I. Shlimak and M. S. Shur, Applications of Ultra-High Conducting Polymer Films for High-Resolution Flat-Panel Displays, The Physics of Semiconductors ed. by M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996), pp. 3347-3350 (1996)

541. K. Lee, M. Shur, and S. Jones, Optoelectronic Circuit Including Heterojunction, United States Patent # 5535231, July 9 (1996)

542. H. Slade, M. S. Shur, S. C. Deane, and M. Hack, Below Threshold Current Conduction in Hydrogenated Amorphous Silicon Thin Film Transistors, Applied Physics Letters, 69(17), pp. 2560-2562, 21 Oct. (1996)

543. M. S. Shur, S. M. Sze, and J. M. Xu, Preface, Special Issue on Present and Future Trends in Device Science and Technologies, IEEE Transactions on Electron Devices, vol. 43, No. 10, p. 1618, October (1996)

544. U. V. Bhapkar, and M. S. Shur, Monte Carlo Calculation of Velocity-Field Characteristic of Wurtzite GaN, J. Appl. Phys., 82 (4), pp. 1649-1655, August 15 (1997)

545. T. Ytterdal, M. S. Shur, M. Hurt, and W. Peatman, Schottky Barrier Height Enhancement, Applied Physics Letters, 70, No. 4, pp. 441-442, January (1997)

546. M. Asif Khan, Q. Chen, Michael S. Shur, B. T. Dermott, J. A. Higgins, J. Burm, W. J. Schaff, and L. F. Eastman, GaN Based Heterostructures for High Power Devices, Solid State Electronics, vol. 41, No. 10, pp. 1555-1559 (1997)

547. M. Asif Khan, Q. Chen, J. Yang, M. Z. Anwar, and M. Blasingame, M. S. Shur, J. Burm and L. F. Eastman, Recent Advances in III-V Nitride Electron Devices, IEDM-96 Technical Digest, Invited, December (1996)

548. A. Owusu, M. D. Jacunski, M. S. Shur, and T. Ytterdal, SPICE Model for the Kink Effect in Polysilicon TFTs, p. 680, in Meeting Abstracts, vol. 96-2, Fall Meeting, San Antonio, Texas, The Electrochemical Society, New Jersey, ISBN 0160-4619, October 6-11, 1996

549. M. S. Shur, M. D. Jacunski, H. C. Slade, A. A. Owusu, T. Ytterdal, and M. Hack, SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors, p. 559, in Meeting Abstracts, vol. 96-2, Fall Meeting, San Antonio, Texas, The Electrochemical Society, New Jersey, ISBN 0160-4619, October 6-11, 1996

550. Michael S. Shur and M. Asif Khan, Wide Band Gap Semiconductors. Good Results and Great Expectations., in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, Chapter 2, pp. 25-32, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997)

551. F. Schuermeyer, N. Bunger, W. C. B. Peatman, and M. S. Shur, Optoelectronic 2-D MESFET, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, Chapter 2, pp. 41-44, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997)

552. J. M. Xu, M. S. Shur, and B. L. Gelmont, Semiconductor Ridge Laser with Lateral Injection, United States Patent #5563902, 10/08/1996

553. C. J. Sun, M. Zubair Anwar, Q. Chen, J. W. Yang and M. Asif Khan, M. S. Shur, A. D. Bykhovski, H. Temkin, Quantum Shift of Band Edge Stimulated Emission in InGaN-GaN Multiple Quantum Well Light Emitting Diodes, Appl. Phys. Lett., 70 (22), pp. 2978-2980, June 2 (1997)

554. M. S. Shur and M. Asif Khan, GaN/AlGaN Heterostructure Devices: Photodetectors and Field Effect Transistors, MRS Bulletin, vol. 22, No. 2, pp. 44-50, Feb. (1997)

555. M. Asif Khan and M. S. Shur, Recent Progress in AlGaN/GaN Based Optoelectronic Devices, in Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3006, Optoelectronics Integrated Circuits, Yoon-Soo Park and Ramu V. Ramaswamy, Editors, (1997), pp. 154-163

556. B. L. Gelmont, M. S. Shur, and M. Stroscio, Analytical Theory of Electron Mobility and Drift Velocity in GaN, Mat. Res. Soc. Proc. Vol. 449, pp. 609-614 (1997)

557. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, Elastic Strain Relaxation in GaN-AlN, GaN-AlGaN, and GaN-InGaN Superlattices, J. Appl. Phys., Vol. 81, No. 9, pp. 6332, May (1997)

558. T. Fjeldly, T. Ytterdal, and M. S. Shur, Introduction to Device and Circuit Modeling for VLSI, John Wiley and Sons, New York, 1998, ISBN 0-471-15778-3

559. M. S. Shur, Q. Chen, J. Yang, R. Gaska, M. Blasingame, M. Asif Khan, A. Ping, I. Idesida, V. P. Madangarli, and T. S. Sudarshan, High Pinch-off Voltage AlGaN-GaN Heterostructure Field Effect Transistor, Proceedings of ISDRS-97, pp. 377-380, Charlottesville, VA, Dec. (1997)

560. Michael S. Shur, SiC Transistors, in "SiC Materials and Devices", ed. Y. S. Park, (1998), Academic Press, Semiconductors and Semimetals, vol. 52, pp. 161-193 (1998)

561. Q. Chen, R. Gaska, M. Asif Khan, Michael S. Shur, A. Ping, I. Adesida, J. Burm, W. J.Schaff, and L. F. Eastman, Microwave Performance of 0.25 micron Doped Channel GaN/AlGaN Heterostructure Field Effect Transistor at Elevated Temperatures, Electronics Letters, vol. 33, No. 7, pp. 637-639, March 27 (1997)

562. M. E. Levinshtein, S. Rumyantsev, and M. Shur, Editors, Handbook of Semiconductor Material Parameters, vol. 2, World Scientific, 1998, to be published

563. R. Tsai, W. C. B. Peatman, R. M. Weikle, II, and M. S. Shur, Multi-Channel 2-D MESFET for Microwave Applications, Proceedings of ISDRS-97, pp. 151-154, Charlottesville, VA, Dec. (1997)

564. M. Dyakonov and M. S. Shur. Plasma Wave Electronics: Terahertz Detectors and Sources Using Two Dimensional Electronic Fluid in High Electron Mobility Transistors, 1997 Advanced Workshop on Frontiers in Electronics (WOFE-97) Proceedings, ISBN 0-7803-4059-0, IEEE, Catalog Number 97TH8292, Puerto de la Cruz, Tenerife, Spain, pp. 105-108, January (1997)

565. W. Knap, S. Contreras, H. Alause, C. Skiberbiszewski, J. Camassel, M. Dyakonov, J. L. Robert, J. Yang, Q. Chen, M. Asif Khan, M. Sadowski, S. Huant, F. J. Yang, M. Goiran, J. Leotin, and M. Shur, Cyclotron Resonance and Quantum Hall Effect Studies of the Two-Dimensional Electrons Confined at the GaN-AlGaN Interface, Appl. Phys. Lett., 70 (16), pp. 2123-2125, April (1997)

566. M. S. Shur, H. C. Slade, T. Ytterdal, L. Wang, Z. Xu, K. Aflatooni, Y. Byun, Y. Chen, M. Froggatt, A. Krishnan, P. Mei, H. Meiling, B.-H. Min, A. Nathan, S. Sherman, M. Stewart, and S. Theiss, Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors, Mat. Res. Soc. Symp. Proc., vol. 467, pp. 831-842 (1997)

567. J. Burm, K. Chu, W. J. Schaff, L. F. Eastman, M. A. Khan, Q. Chen, J. W. Yang, and M. S. Shur, 0.12-µm Gate III-V Nitride HFET's with High Contact Resistances, IEEE Electron Device Letters, vol. 18, No. 4, pp. 141-143, April (1997)

568. G. Meneghesso, A. Neviani, M. Pavesi, M. Hurt, W. C. B. Peatman, M. Shur, C. Canali, E. Zanoni, Parasitic bipolar effects leading to on-state breakdown in 2D-MESFET’s", Proc. of ESSDERC ‘97, 27th European Solid State Device Research Conference, pp. 724-727, Stuttgart, Germany, 22-24 September 1997

569. F. Schuermeyer, C. Cherny, and M. S. Shur, In-situ Characterization of Lateral and Vertical Band Structure Profiles and Hole Storage Effects in PHEMTs by the Photoconduction Technique,, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, Chapter 2, pp. 495-498, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997)

570. R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and Michael S. Shur, High Temperature Performance of AlGaN/GaN HFETs on SiC Substrates, IEEE Electron Device Letters, vol. 18, No. 10, pp.492-494, October 1997

571. R. Gaska, Q. Chen, J. Yang, A. Osinsky, M. Asif Khan, and Michael S. Shur, AlGaN/GaN Heterostructure FETs with Offset Gate Design, Electronics Letters, 33, No. 14, pp. 1255-1257, 3 July (1997)

572. A. A. Tager, R. Gaska, I. A. Avrutsky, M. Fay, H. Chik, A. Springthorpe, Z. Husain, J. M. Xu, and M. S. Shur, Ion Implanted GaAs/InGaAs lateral Injection Ridge QW Laser for OEICs: study of Operation Mechanisms, in Proceedings of ISCS-24, accepted for publication, Institute Phys. Conference Series, IOP Publishing, London (1998)

573. M. V. Cheremisin, M. I. Dyakonov, M. S. Shur, and G. Samsonidze, Influence of Electron Scattering on Current Instability in Field Effect Transistor, submitted to Solid State Electronics

574. Q. Chen, R. Gaska, M. Asif Khan, and Michael S. Shur, G. J. Sullivan, A. L. Saylor, and J. A. Higgins, High Power Microwave 0.25 Micron Doped Channel GaN/AlGaN Heterostructure Field Effect Transistor, IEEE Electron Device Lett., Vol. 19, No. 2, pp. 44 - 46, Feb. (1998)

575. T. Ytterdal, Tor A. Fjeldly, Michael S. Shur, and S. Baier, and R. Lucero, Enhanced Heterostructure Field Effect Transistor Model Suitable for Simulation of Mixed Mode, unpublished

576. F. Schuermeyer, K. Y. Hur, and M. S. Shur, Negative Photoconduction in Fully Fabricated InP Based HEMTs, in Proceedings of Sixteenth Biennial Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New Your, Aug. 4-6 (1997), IEEE ISBN Number 0-7803-3970-3, pp. 89-98

577. M. S. Shur and M. Asif Khan, GaN and AlGaN Ultraviolet Photodetectors, Academic Press, Semiconductors and Semimetals, T. Moustakos and J. Pankove, Editors (1998), to be published

578. F. Schuermeyer, M. S. Shur, E. J. Martinez, and D. E. Grider, Real Space Transfer of Holes in p-channel HFETs, ISDRS-97, Proceedings of ISDRS-97, pp. 85-88, Charlottesville, VA, Dec. (1997)

579. M. A. Khan and M. S. Shur, GaN-based Devices for Electronic Applications, in Proceedings of ESSDERC '97, September 1997, to be published

580. T. Ytterdal, M. S. Shur, W. C. B. Peatman, M. Hurt, and R. Tsai, Emerging Heterodimensional Electronics for Ultra Low Power Applications, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, Chapter 2, pp. 45-44, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997)

581. T. A. Fjeldly, T. Ytterdal, and M. S. Shur, FET Modeling for Analog and Digital Applications, 1997 Advanced Workshop on Frontiers in Electronics (WOFE-97) Proceedings, ISBN 0-7803-4059-0, IEEE, Catalog Number 97TH8292, Puerto de la Cruz, Tenerife, Spain, pp. 133-136, January (1997)

582. Tor Ytterdal, M. S. Shur, W.C.B. Peatman, and M. Hurt, Heterodimensional MESFETs for Ultra Low Power Electronics, 1997 Advanced Workshop on Frontiers in Electronics (WOFE-97) Proceedings, ISBN 0-7803-4059-0, IEEE, Catalog Number 97TH8292, Puerto de la Cruz, Tenerife, Spain, pp. 137-140, January (1997)

583. M. S. Shur and R. Suris, Preface, in the Proceedings of 23d International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28, 1996, Institute Phys. Conference Series, No. 155, M. S. Shur and R. Suris, Editors, IOP Publishing, London (1997)

584. S. K. O'Leary, B. E. Foutz, M. S. Shur, U. V. Bhapkar, and L. F. Eastman, Electron Transport in Wurtzite Indium Nitride, J. Appl. Phys., 83 (2), pp. 826-829, 15 Jan. (1998)

585. G. S. Pomrenke, F. Schuermeyer, M. S. Shur, and J. Xu, Editors, Preface, pp. IV-V, 1997 Advanced Workshop on Frontiers in Electronics (WOFE-97) Proceedings, ISBN 0-7803-4059-0, IEEE, Catalog Number 97TH8292, Puerto de la Cruz, Tenerife, Spain, pp. 105-108, January (1997)

586. R. Gaska, J. Yang, A. Osinsky, A. D. Bykhovski, and Michael S. Shur, Piezoeffect and Gate Current in AlGaN/GaN High Electron Mobility Transistors, Appl. Phys. Lett., Applied Physics Letters 71(25), p. 3673, December 22 (1997)

587. R. Gaska, A. Osinsky, J. Yang, and Michael S. Shur, Self-Heating in High Power AlGaN/GaN HFETs, IEEE Electron Device Letters, vol. 19, No. 3, pp. 89-91 (1998)

588. J. Lu, M. S. Shur, R. Weikle, and M. I. Dyakonov, Detection of Microwave Radiation by Electronic Fluid in AlGaN/GaN High Electron Mobility Transistors, in Proceedings of Sixteenth Biennial Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, New York, Aug. 4-6 (1997), pp. 211-217, IEEE ISBN Number 0-7803-3970-3

589. R. Gaska, M. S. Shur, J. W. Yang, A. Osinsky, A. O. Orlov, G. L. Snider, Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates, Materials Science Forum, vol. 264-268, pp. 1445-1448, Trans. Tech. Publ., Switzerland (1998)

590. R. Gaska, J. Yang, A. Osinsky, M. Asif Khan, M. S. Shur, Novel High Power AlGaN/GaN HFETs on SiC substrates, IEDM-97 Technical Digest, pp. 565-568, December, 1997

592. G. Meneghesso, G. Peloso, A. Neviani, M. Hurt, W.C.B. Peatman, M. Shur, E.

Zanoni, Study of breakdown mechanism in 2D MESFET’s", Proc. of WOCSDICE ‘97, 21th European Workshop on Compound Semiconductor Devices and Integrated Circuits, pp.21-22, Scheveningen, The Netherlands, 25-28 May 1997.

593. M. S. Shur, H