Above figure from http://www.elec.gla.ac.uk/groups/dev_mod/papers/igbt/igbt.html

The device structure of N-channel Insulated Gate Bipolar Transistor (IGBT) is shown above. The structure is very similar to that of a vertically Diffused MOSFET (DMOS) except for the p+ substrate layer for the drain instead of the n+ substrate. IGBT combines the simple gate drive characteristics of the MOSFET with the high current and low saturation voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

The N-channel IGBT Ic-Vce characteristics is measured by applying a staircase sweep voltage to the collector (Vce) of the IGBT and monitoring the collector current. A constant voltage is applied to the gate (Vg) during each sweep, and a group of Ic-Vce data curves can be acquired by varying the gate voltage between sweeps. The emitter/source is grounded.

The experiment parameters to be setup include the start, stop, and step voltages for the sweep, the start voltage, step voltage and the number of steps of the gate voltages. You may also set the compliance of the current for protection. Both the drain voltage and gate voltage are limited to (-5.0V, 5.0V).

To run the experiment, go back to Remote Lab Homepage.