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Contact Information |
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Email address Web address Phone number Fax number Address |
http://nina.ecse.rpi.edu/shur/ (518)276-2201 (425)276-2990 Rensselaer Polytechnic Institute, CII 9017, |
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Honors |
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Fellow,
Electrochemical Society (2004) Distinguished
Microwave Lecturer, IEEE MTT (2004-2006) Pioneer
Award from Semiconductor Semi (2003) Distinguished
Lecturer, IEEE, EDS (2003-present) Plenary
Speaker, European Microwave Week (October, 2003, invited, joint with Prof.
Ryzhii) Humboldt
Senior Research Prize (2002) WOFE-02 two Best Poster Awards (First Place for A.
Žukauskas, R. Vaicekauskas, F. Ivanauskas, M. S. Shur and R. Gaska, Optimization of white all-semiconductor
lamp for solid-state lighting applications, in Proceedings of WOFE-02, IJHSES
and shared Third-Fourth Place for S. L. Rumyantsev, M. S. Shur, R. Gaska and M.
E. Levinshtein, Low frequency noise in GaN/AlGaN heterostructure field effect
transistors, in Proceedings of WOFE-02, IJHSES Highly
Cited Researcher Commendation (from ISI International) 2000 Plenary
Speaker at ECSCRM2000 1999
Materials Research Society Best Poster Award 1999 van der Ziel Award from ISDRS–99 Plenary
speaker at DCIS-99, Palma de Majorca, November 1999 Commendation for excellence in Technical Communications from Laser Focus World (joint with Asif Khan), June 1999 Co-recipient
of outstanding paper award from GOMAC'98 (T. T. Vu, P. C. Nguyen, L. T. Vu,
C. H. Vu, C. H. Nguyen, M. D. Bui, A. C. Nguyen, J. N. C. Vu, R. Harjani, L.
L. Kinney, K. K. Parhi, D. L. Polla, R. Schaumann, P. J. Schiller, and M. S.
Shur, GaAs Based Microsensors Systems, Government Microcircuits Applications
Conference, 16-19 March 1998, Arlington, Virginia) A.
F. Ioffe Prize for “New hydrodynamic phenomena in 2D electron fluid (joint
with A. P. Dmitriev, M. I. Dyakonov, A. S. Furman, V. Yu. Kachorovskii, and
G. G. Samsonidze), 1996 Plenary
Speaker at the International Symposium on Compound Semiconductors, Sep.
(1996) Patricia
W. and C. Sheldon Roberts Chair in Key
Note Speaker, 21-st Army Electronics Research Conference, June (1996) Fellow
APS (1995) Distinguished
Lecturer, Honorary
Doctorate, John
Marshall Money Chair Professorship, Fellow
IEEE (1989) Member
of Center for Advanced Studies, Eta Kappa Nu, Tau Beta Pi, Sigma Xi Prizes
for the best papers of A. F. Ioffe Institute: 1968-1973 Gold
Medal of the Russian Ministry of Education, 1959
Honors obtained by Shur’s graduate students Advisor
to J. Deng, Founder Award, 1999 Advisor
to Nezih Pala, Founder Award, 1999 Project
Advisor to Ives Ngu, Faculty for Future Award, 1998 Advisor
to Ling Wang, Founder Award, 1997 Advisor
to Holly Slade, Beckman Memorial Award Winner, ECS (1995) and MRS Graduate
Student Award Winner (1996) Advisor to Edgar Martinez, the Best Student Paper Award Winner, ISDRS-93 (1993) |
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Employment Rensselaer Polytechnic
Institute, Professor,
Physics, Applied Physics and Astronomy 1998-present Professor,
Information Technology, 1998-present Director,
Broadband Center 2002 –
present Acting,
Associate Director, CIE 1997- present University of Virginia, IBM, A. F. Ioffe Institute, |
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MSEE (with honors), St. Petersburg
Electrotechnical Institute, 1965 Ph.D., Physics,
A. F. Ioffe Institute of Physics and Technology, 1967 Dr. Phys. Math. Sc. A. F. Ioffe Institute of
Physics and Technology, 1992 Honorary Doctorate, |
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Boeing
(2004), SET – co-founder (1999-present), Northrop-Grumman (1998-2,000),
Motorola (1994 - 1997), APA Optics (1994 - 1998), DpiX and Xerox PARC (1986
-1997), AT&T Bell Labs (1990 - 1992), Allied Signal (1991), Honeywell
(1978 - 1988), Control Data (1990), Sperry Univac (1977-78,1992), General
Electric (1988), ARO (1988- 1993), Energy Conversion Devices (1976 - 1986),
Ford Microelectronics (1984 - 1985), International Holographics (1978), 3M
Canada (1982 - 1984), WPAFB (1991 - 1996) TDI (1998-2000), Technical Expert
(Patent firms, 1998 – 2000, Battelle (1996-1999), Xerox PARC and dPix (1986
-1997, Cray Research (1983), Sperry (1977 - 1978), |
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More than 100 grants and
contracts (over the years) from NSF, ARO, ONR, AFOSR, ARPA, NATO, NRL,
Honeywell, McDonnell Douglas, Ford Microelectronics, Control Data
Corporation, M/A COM, Bell Core, IBM, Microelectronics and Information
Sciences Center, Supercomputer Institute, VCIT, GE, Motorola, Supercomputer
Institute, NASA, and other agencies. |
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IEEE
(Fellow), American Physical Society (Fellow and Life Member); Electrochemical
Society (Fellow), Electron Device Society; Microwave Theory and Technique
Society (Life Member), Solid State Circuits Society, Eta Kappa Nu; Tau Beta
Pi; Sigma Xi (Life Member), Materials Research Society, ASEE, Electromagnetic
Academy, US Commission D, International Union of Radio Science (elected),
USNC Member-at-Large (elected 2000-2003), International Network for
Engineering Education and Research ( |
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Editor-in-Chief, International Journal of
High-Speed Electronics and Systems (1995-present) Co-Editor-in-Chief, Member, Editorial Board,
International Journal of High Speed Electronics and System (1990-present) Editor, Book series, Special Topics in Circuits
and Systems (1995-present) Associate Editor, IEEE Transactions on Electron
Devices (1990-1993) Member, Honorary Editorial Board, Solid State
Electronics (1996-present) Member, International
Advisory Committee, Journal of Semiconductor Technology and Science
(1999-present) Special
Issues and Proceedings Co-Editor (with T. Wilson and D. Urban) Mat. Res. Soc. Proc, MRS, Guest Editor (with Y. S. Park and W. Tang),”
International Journal of High Speed Electronics and Systems, (2003) Guest Editor (with V. Lumelsky and S. Wagner), Special Issue on “Sensitive Skin,” International Journal of High Speed Electronics and Systems (2001) Guest Editor (with Y. S. Park, J. Xu, Guest Editor, Special Issue on “Beyond Silicon.
Advanced Device and Circuit Simulators, International Journal of High Speed
Electronics and Systems, (2000) Guest Editor, Special Issue on “Compound
Semiconductor Technology. The Age of Maturity”, International Journal of High
Speed Electronics and Systems, (2000) Co-Editor (with T. H. Myers, R. M. Feenstra, H.
Amano) Mat. Res. Soc. Proc, vol. 595,
MRS, Guest co-Editor (with Simon Sze and Jimmy Xu),
Special Issue on Future and Present Trends in Microelectronics, IEEE
Transactions on Electron Devices, October, 1996 Co-Editor (with Steve DenBaars, John Palmour, and
Michael Spencer) Mat. Res. Soc. Proc,
vol. 512, MRS, Co-Editor, Proceedings of the International Symposium on Compound
Semicond., Sep. (1996) Co-Editor, Proceedings of the 21-st Army
Electronics Research Conference, June (1996) Co-Editor (with T. Fjeldly), Proceedings of Symposium on Supercomputer Simulation of Semiconductor Devices, Comp. Phys. Comm, Special Issue, August 1991 Co-Editor), Proceedings of Symposium on Supercomputer Simulation of Semiconductor Devices, Comp. Phys. Comm, Special Issue, August 1991 |
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Program Committee Member, International
Display Manufacturing Conference & Exhibition) 2005 Program Committee Member, SPIE
Conference 5470 Noise in Electronic Devices and Circuits 2004 Committee member of ICSICT 2004, Bejing
(2004) Co-organizer, MRS Symposium, Devices on
Flexible Substrates, Fall (2005) Chair, Workshop on Frontiers in Electronics
(WOFE), Local Chair, Lester Eastman Conference on
High Speed Devices (2004) Member of the International Programme
Committee for ICNS-6 Technical
Program Committee Member, 2004 International Conference on Solid-State and
Integrated-Circuit Technology (ICSICT) Beijing, China, Oct. 18-21, 2004
(website: www.ime.pku.edu.cn/icsict) Co-Organizer,
THIN FILM TRANSISTOR TECHNOLOGIES VII
The Electrochemical Society’s
206th Meeting Honolulu, Hawaii October
3-8, 2004 Member of International Advisory
Committee, ISPSA2004, Vice-President for publications, Sensor
Council, 2003 (elected) Member, Organizing Committee, ISDRS 2003 Member, International Advisory Committee,
Twelfth International Workshop on the Physics of Semiconductor Devices (IWPSD-2003)
in Technical Committee Member, FaN 2003 - SPIE
Conference on Noise in Devices and Circuits Committee Member , Lester Eastman
Conference on High Speed Devices (2002) Co-organizer, MRS Symposium on Electronics
on Unconventional Substrates, December 2002 Technical Program Committee co-Chair, IEEE
Sensor-02, Co-organizer, THIN FILM TRANSISTOR
TECHNOLOGIES VI, The Electrochemical Society’s 202-nd Meeting, Salt Lake
City, Utah, October 20-25, 2002 Co-organizer, MRS Symposium, Devices on
Flexible Substrates, Fall (2002) Member, International Advisory Committee,
11th Member, Program Committee, International
Workshop on Nitride Semiconductors - IWN2002, Member and past Chair, Organizing
Committee, ISDRD-2001 Member, Organizing Committee, ISSSE’01 Member, Program Committee, Chair, Workshop on Frontiers in Electronics
(WOFE), Member, Organizing Committee,
ISDRS-01, Member, Program Committee, International
conference on Nitride Semiconductors, Co-organizer, MRS Symposium on Wide Band
Gap Semiconductors for High power, high temperature applications, 2000 Member, Organizing Committee, 9th
International Symposium on Nanostructures, Member, IEEE Award Committee, 1999-2003 Co-organizer, MRS Symposium on Wide Band
Gap Semiconductors for high power, high temperature applications, 1999 Member, Scientific Program Committee,
ESSDERC'99 Co-Chair, Workshop on Frontiers in
Electronics, (1999) Past Senior Chair and Member,
Organizing Committee, ISDRS-99, Member, Scientific Program Committee,
ESSDERC'98 Co-organizer, MRS Symposium on Wide Band
Gap Semiconductors for High power, high temperature applications, 1998 Member, 6th
IEEE Terahertz Electronics Conference, Technical Programme Committee (1998) Co-Chair, Workshop on Frontiers in
Electronics, (1999) Program Chair, Workshop on Frontiers in
Electronics, Member, Scientific Program Committee,
ESSDERC'97, Member, Program Committee, Optoelectronic
Integrated Circuits, SPIE West, Feb. 1997 US Coordinator, Program Committee Member
and Co-Secretary, 23d International Symposium on Compound Semiconductors, Member, Scientific Program Committee,
ESSDERC'96, Session Convener, General Assembly of URSI,
Committee Member and Past Junior Chair,
Internat. Semicond. Device Research Symp., 1995 Member, Scientific Program Committee,
ESSDERC'95, Hague Member, Program Committee, International Member, Program Committee, MRS, 1995 Organizer, Special Session, APS March
Meeting, 1995 Co-Secretary, 22d Intern. Symp. on Compound
Semiconductors, Technical Program co-Chairman, ISSSE, Chairman, Vice Chairman, Secretary USNC, URSI, Member (ex-officio) 1994 –
1996. URSI Correspondent, 1994 - 1996 Member, Org. Committee of Topical Workshop
on Heterostr. Member, IEEE Award Committee, 1992-1994 Member, MRS Program Committee, Fall 1994 Committee Member, 3rd International
Conference on VLSI and CAD, Co-convener, Session on Device Modeling, URSI
General Assembly, Lecturer, Short Course on Compound
Semiconductor Modeling, Conference Chairman, International
Semicond. Device Research Symposium, 1993 Local Chairman, Optoelectronics Workshop, Local Chairman, Workshop on SiC Materials
and Devices, Committee Member, 8th Session Chairman, ISSSE, Program Committee Chairman,
International Semicond. Device
Research Symposium, 1991 Member,
Tech. Program Comm., APS-IEEE-URSI Conf., Session Chairman, APS-IEEE-URSI Conference,
Co-organizer, Symposium "
Supercomputer simulation of Semicond.
Dev.", University of Minnesota Senator, 1989 Session Chair and Program Comm. Member,
Intern. Symposium on Circuits and
Systems, Session Organizer, 1988 IEEE ISCS, Lecturer, Short Course on Compound
Semiconductor Devices, Member, IEDM Program Committee, Session Chairman, IEDM, Session Chairman, SSDM |
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Publications, Patents, and
Conference Presentations Over
1,000 technical publications, more than 200 plenary, invited, and contributed
conference presentations, 32 books authored, co-authored, or edited, 20 book
chapters, 26 patents on solid-state devices granted Books authored or
co-authored 9. A. Žukauskas, M. S. Shur, and R. Gaska,
Introduction to 8. T. Fjeldly, T. Ytterdal, and M. S. Shur, Introduction to Device Modeling and Circuit Simulation, Wiley and Sons, 1998 7. M. S. Shur,
Introduction to Electronic Devices, John Wiley, 6. K. Lee, M. S. Shur, T. Fjeldly, T. Ytterdal, Semiconductor Device Modeling for VLSI, Prentice, 1993 5.
M. S. Shur, Physics of Semiconductor
Devices, Prentice Hall, New Jersey, 1990 (translated into Russian and
Korean, Publishing House "MIR", Moscow, 1993), also published
in India in 1996 4.
M. S. Shur, GaAs Devices and Circuits,
Plenum Publishing Corporation, 1987 (translated into Russian,
Publishing House "MIR", 3. M. E. Levinshtein, Yu. K. Pozhela, M. S.
Shur, Gunn Effect, Sov. Radio, 2. M. S. Shur, Gunn Effect, Energia, 1. G. A. Smolenskii, V. A. Bokov, B. A.
Isupov, N. N. Krainik, R. E. Pasynkov, M. S. Shur, Ferroelectrics and Antiferroelectrics, Nauka, St. Petersburg,
1971. Books edited 24. D. Woolard, W. Loerop, and M. S. Shur, and,
Editors, Terahertz Sensing Technology, Volume II. Emerging Scientific
Applications and Novel Device Concepts, World Scientific (2003) (December) 23. D. Woolard, W. Loerop, and M. S. Shur, and,
Editors, Terahertz Sensing Technology, Volume I. Electronic Devices &
Advanced Technology, World Scientific (2003) 22. Y. S. Park, M. S. Shur, and W. Tang, Editors,
Frontiers in Electronics: Future Chips Proceedings of the 2002 Workshop on
Frontiers in Electronics (WOFE-02) St. Croix, Virgin Islands, World
Scientific Pub Co; (January 15, 2003), ISBN: 9812382224, Editors, Y. S. Park,
M. S. Shur, and W. Tang, Vol. 26. Series Selected Topics in Electronics and
Systems, M. S. Shur, Editor-in-Chief 21. M. S. Shur, T. Wilson Nguyen, 20. 24. T. A. Fjeldly and 19. Compound
Semiconductor Power Transistors and State-of-the-Art Program on Compound
Semiconductors XXIX, F. Ren, S. J. Pearton, J. C. Zolper, F. L. Schuermeyer,
M. Shur, V. Swaminathan, D. N. Buckley, S. N. G. Chu, C. R. Abernathy, and R.
E. Sah. PV 98-12, 18. G. Wetzel, M. S. Shur, U. K. Mishra, B. Gil,
and K. Kishino, GaN and Related Alloys – 2000, Materials Research Society
Symposium Proceedings, Vol. 639, G7.3, Editors (2001) 17. E. Borovitskaya and M. S. Shur, Introduction,
in E. Borovitskaya and M. S. Shur, Editors, Quantum Dots, World Scientific,
Ltd. , 16. M. E. Levinshtein, S. L. Rumyantsev, and M. S.
Shur, Editors, “Properties of Advanced Semiconductor Materials: GaN, AlN,
InN, BN, and SiGe“, John Wiley and Sons, ISBN 0-471-35827-4, 15. T. H. Myers, R. M. Feenstra, M. S. Shur, H.
Amano, Editors, GaN and Related Alloys – 1999, Mat. Res. Soc. Proc, vol. 595,
MRS, 14. V. Lumelsky, M. S. Shur, and S. Wagner, Editors, Sensitive Skin, World Scientific, ISBN 981-02-4369-3, 2000. 13.
M. S. Shur and T. A. Fjeldly, Editors, “Silicon and Beyond. Advanced Device Models and circuit
simulators, World Scientific, 2000 12. Y. S. Park, S. Luryi, M. S. Shur, J. Xu, and A. Zaslavsky, Proceedings of Advanced Workshop on 'Frontiers in Electronics' (WOFE-99), World Scientific, 2000 11.
M. E. Levinshtein, S. Rumyantsev, and M. S. Shur, Editors, Handbook of Semiconductor Material
Parameters, vol. 2, World Scientific, 1999 10. Steve DenBaars, John Palmour, Michael Shur,
and Michael Spencer. Wide band Gap Semiconductors for High Power, High Frequency,
and High Temperature, Mat. Res. Soc.
Proc, vol. 512, MRS, 9. M. E. Levinshtein and M. S. Shur, Editors,
Semiconductor Technology. Processing
and Novel Fabrication Techniques, John Wiley and Sons, 8.
Michael S. Shur and R. Suris, Editors, the Proceedings of 23d International
Symposium on GaAs and Related Compounds, St. Petersburg, Russia, Sep. 22-28,
1996, Institute Phys. Conference Series, No. 155, M. S. Shur and R. Suris,
Editors, IOP Publishing, London (1997) 7. G. S. Pomrenke, F. Schuermeyer, M. S. Shur,
and J. Xu, Editors, Preface, pp. IV-V, 1997 Advanced Workshop on Frontiers in
Electronics (WOFE 97) Proceedings, ISBN 0-7803-4059-0, IEEE, Catalog Number
97TH8292, Puerto de la Cruz, Tenerife, Spain, pp. 105-108, January (1997) 5.
Richard Chait, Catherine Kominos, Michael S Shur, Michael Stroscio, and James
J Valdes, Editors, Twelfth Army
Science Conference, Award Winning Papers, ISBN 981-02-3178-4, World
Scientific, 1997 5. M. S. Shur, Editor, Compound Semiconductor Technology. The Age of Maturity, World Sci, 1996 4. M. E. Levinshtein, S. Rumyantsev, and M. S. Shur, Editors, Handbook of Semiconductor Material Parameters, vol. 1, World Scientific, 1996 3. M. E. Levinshtein and M. S. Shur, Editors, Best of Soviet Semiconductor Physics and Technology (1989-1990), World Scientific, 1995 2. M. E. Levinshtein and M. S. Shur, Editors, Best of Soviet Semiconductor Physics and
Technology (1987-1988), Key Papers in Physics, American Institute of
Physics, 1991 1.
M. Shur and T.A. Fjeldly, editors, Supercomputer
Simulation of Semiconductor Devices, Proceedings of a Symposium at the
Minnesota Supercomputer Institute, (Minneapolis, 1990), published by North Holland,
Elsevier Science Publishers, Amsterdam (1991), ISSN 0010-4655 Book
Chapters 28. D. J. Gundlach, M. S.
Shur, and T. N. Jackson, Organic Semiconductor Electronic Devices, Systems,
and Networks. Device Structures, Characterization, and Modeling, in “Printed
Organic and Molecular Electronics,” Paul Brazis, Jr., Daniel Gamota and Jie
Zhang, Co-editors, Kluwer Academic Publishers 27.
S. Karmalkar, M. S. Shur, and
R. Gaska, GaN-based power high electron mobility transistors, in 'Wide Energy
Bandgap Electronic Devices”, pp. 173-216, Fan Ren and 26.
A. Žukauskas, M. S. Shur, and R. Gaska, 25. M. E. Levinshtein, A.
Balandin, S. L. Rumyantsev, M. S. Shur, Low-frequency noise in GaN-based
Field Effect Transistors (Chapter), in Low Frequency Noise, edited by A.
Balandin 24. E. Borovitskaya and M.
S. Shur, Introduction, in E. Borovitskaya and M. S. Shur, Editors, Quantum
Dots, World Scientific, Ltd. , Singapore, 2002; also published as Special
Issue of IJHSES 23. M. S. Shur, Metal
Semiconductor Field Effect Transistors, CRC Microwave Handbook, M. Golio,
Editor, 2001 22. M. S. Shur, Bipolar
Junction Transistor, Encyclopedia of Physical Science and Technology, 3-d
Edition, R. A. Meyers, Editor, September (2001) 21. M. Asif Khan, G. Simin,
M. Shur, and R. Gaska, Nitride based High-Power Field-Effect Transistors, in
The Encyclopedia of Materials: Science and Technology, Editors-in-Chief:,
K.H.J. Buschow, University of Amsterdam, The Netherlands, R.W. Cahn,
University of Cambridge, UK, M.C. Flemings, B. Ilschner, E.J. Kramer, S.
Mahajan, 2001, Elsevier Science 20. T. Ytterdal, T. A.
Fjeldly, and M. S. Shur, SPICE and Beyond. Advanced Device and Circuit
Simulators. in Special Issue “Silicon and Beyond. Advanced Device Models and circuit
simulators, M. S. Shur and T. A. Fjeldly, Editors, World Scientific, 2001 19. B. Ińiguez, T. A.
Fjeldly, and M. S. Shur, SPICE Models for Novel Semiconductor Devices, in
Special Issue “Silicon and Beyond.
Advanced Device Models and circuit simulators, IJHSES, M. S. Shur and
T. A. Fjeldly, Editors, World Scientific, 2001 18. B. Ińiguez, T. A. Fjeldly, and M. S. Shur, Thin Film Transistor
Modeling, in Special Issue “Silicon and Beyond. Advanced Device Models and circuit
simulators, IJHSES, M. S. Shur and T. A. Fjeldly, World Scientific, 2001 17.
M. S. Shur and M. Asif Khan, GaN and AlGaN Devices: Field Effect Transistors
and Ultraviolet Photodetectors, Academic Press, Semiconductors and Semimetals,
vol., pp. S. Pearton, Editor (1999) 16.
M. S. Shur, A. D. Bykhovski, R. Gaska, and A. Khan, GaN-based Pyroelectric
and Piezoelectric Sensors, Semiconductor Homo- and Hetero-Device Structures,
Colin Wood, Editor, Academic press, 1999 15.
M. S. Shur, SiC Transistors, in "SiC Materials and Devices", ed. Y.
S. Park, (1998), Academic Press, Semiconductors and Semimetals, vol. 52, pp.
161-193 (1998) 14.
M. S. Shur and M. Asif Khan, GaN and AlGaN Ultraviolet Photodetectors,
Academic Press, Semiconductors and Semimetals, vol. 57, pp. 407-439, T.
Moustakos and J. Pankove, Editors (1998) 13.
M. S. Shur and T. A. Fjeldly, Compound Semiconductor Field Effect
Transistors, in Modern Semiconductor Device Physics, Edited by S. M. Sze,
John Wiley and Sons, N, 1998 ISBN 0-471-15237-4 12.
M. S. Shur and M. Dyakonov, Two-Dimensional Electrons in Field Effect
Transistors, International Journal of High Speed Electronics and Systems, in
Vol. 9, No. 1, pp. 65-100, March (1998) 11.
M. S. Shur and A. Khan, GaN Based Field Effect Transistors, in "High
Temperature Electronics", ed. M. Willander and H. Hartnagel,
Chapman, 10.
M. S. Shur, Introduction, in "Compound Semiconductor Technology. The
Age of Maturity", World Scientific, 1996, ed. M. S. Shur 9.
T. Fjeldly and M. S. Shur, Simulation and Modeling of Compound Semiconductor
Devices, in "Compound Semiconductor Technology. The Age of Maturity",
World Sci, 1996, ed. M. S. Shur T.
Fjeldly, T. Ytterdal, and M. S. Shur, Metal Semiconductor Field Effect
Transistors, in "Compound Semiconductor Technology. The Age of
Maturity", World Sci, 1996, ed. M. S. Shur 8.
G. Kelner and M. S. Shur, SiC Devices, chapter in the book "Properties
of Silicon Carbide", G. Harris, Editor, M. Faraday House, IEE,
England, 1995 7.
M. S. Shur and T. A. Fjeldly, HEMT Modeling, in "Semiconductor Device
Modeling", C. Snowden and Milnes, Editors, Springer Verlag, London,
1993 6.
M. S. Shur, Gunn and IMPATT Diode Modeling, in "Semiconductor Device
Modeling", C. Snowden and Milnes, Editors, Springer-Verlag, London,
1993 5.
M. S. Shur, Modeling of GaAs and AlGaAs/GaAs Field Effect Transistors, in
"Introduction to GaAs Technology," J. Wiley, New York, ed.
C. T. Wang, pp. 27-97, 1990 4.
M. S. Shur, Submicron GaAs, AlGaAs/GaAs and AlGaAs/InGaAs Transistors, in
"Integrated Circuits in 0.05-0.5 µm dimensional range", John
Wiley and Sons, ed. K. Watts, pp. 122-175, 1989 3.
M. S. Shur, Physical Models for Compound Semiconductor Field Effect
Transistors, in "Semiconductor Device Modeling", pp. 89-108,
C. Snowden, Editor, Springer Verlag, 2. M. S. Shur, Gallium Arsenide versus Silicon. Applications and Modeling,
in "Semiconductor Device Modeling", pp. 60-69, C. Snowden,
Editor, Springer-Verlag, 1.
M. S. Shur, GaAs MESFET Modeling, in "Circuit Analysis, Simulation
and Design", ed. by A. Ruehli, North-Holland; 1986 Book Translated J. E. Carrol, Hot
Electron Microwave Generators, Edward Arnold Ltd. Patents Issued 1.
M. E. Levinshtein and M. Shur, Current Stabilizer, Soviet patent No. 267706,
Bulletin of Inventions & Discoveries, No. 13 (1970) (in Russian) 2.
3.
4.
B. L. Gelmont and M. Shur, Method to Govern Gunn Diode Parameters, Soviet
Patent No. 379968, Bulletin of Inventions and Discoveries, No. 20 (1973) (in
Russian) 5.
B. L. Gelmont and M. Shur, Method of Microwave Amplification, Soviet Patent
No. 422065, Bulletin of Inventions and Discoveries, No. 12 (1974) (in Russian) 6.
M. Shur, Folded Logic 7.
S. M. Baier, N. C. Cirillo Jr., S. A. Hanka, and M. Shur, Gated Transmission
Line Model Structure for Characterization of FETs, Jan. 20 (1987), US patent
# 4,638,341 8.
J. K. Abrokwah, N. C. Cirillo, M. Shur, and O. N. Tufte, High
Transconductance Complementary (Al,Ga)As/GaAs Heterostructure Insulated Gate
Field-Effect Transistor, United States
Patent # 4,814,851, March 21 (1989) 9. J.
Xu and M. Shur, Tunneling Emitter Bipolar Transistor, United States
Patent # 4,845,541, July 4 (1989) 10.
W. Czubatyj, M. Hack, and M. Shur, Method of Making a Double Injection Field
Effect Transistor, United States Patent # 4,882,295, Nov. 21 (1989) 11.
M. Shur and J. Simmons, Novel high speed integrated heterostructure
transistors, photodetectors, and optoelectronic circuits, United States
Patent #4,899,200, February 6 (1990) 12.
J. Xu, M. Shur, and M. Sweeny,
Electronic and optoelectronic devices utilizing light hole properties, United
States Patent , #4,899,201, February 6 (1990) 13.
J. Xu and M. Shur, Double Base Hot
Electron Transistor, United States Patent #4,901,122, February 13 (1990) 14.
M. Shur, Modulation Doped Radiation Emitting 15.
M. Hack, J. G. Shaw and M. Shur, High Current Thin Film Transistor, Patent
4,990,977, Feb. 26 (1991) 16.
J. Xu, M. Shur, and M. Sweeny, Electronic and Optoelectronic Laser Devices
Utilizing Light Hole Properties, United States Patent , # 4,999,682, March 12
(1991) 17.
M. Hack, J. G. Shaw, and M. Shur,
Vertical Thin Film Transistor and Optical Sensor Having Leakage Current
Suppression Elements, Patent 4,996,553, Feb. 26 (1991) 18.
M. S. Shur, Split-gate Field Effect Transistor, United States Patent
5,012,315, April 30 (1991) 19.
M. Shur, Split-gate Field Effect Transistor, United States Patent 5,079,620,
January 7 (1992) 20.
M. Shur and K. Lee, Field-Effect Compound Semiconductive Devices and Methods
for Their Preparation, US Patent # 5,161,235, Nov. 3 (1992) 21.
G. Kelner and M. S. Shur, Junction Field Effect Transistor with Lateral Gate
Voltage Swing (GVS-JFET), United States Patent 5,309,007, May 1994 22.
E. Martinez, F. Schuermeyer, C. Cherny, and M. S. Shur, Twin-Tub
Complementary Heterostructure Field Effect Transistor Fab Process, US Patent,
5,429,963, July 4, 1995 23.
K. Lee, M. S. Shur, and S. Jones, Optoelectronic Circuit Including
Heterojunction, United States Patent # 5535231, July 9 (1996) 24.
J. M. Xu, M. S. Shur, and B. L. Gelmont, Semiconductor Ridge Waveguide Laser
with Lateral Current Injection, United States Patent #5563902, 10/08/1996 25.
K. Lee, M. S. Shur, and S. Jones, Method of Manufacturing an Optoelectronic
Circuit Including Heterojunction Bipolar Transistor, Laser, and Photodetector,
United States Patent # 567478, October 7 (1997) 26.
Rajesh Gupta and M. S. Shur, Compact Low Power Complementary FETs,” US Patent
6,201,267, March 13 (2001) 27. M. A.
Khan, R. Gaska, M. S. Shur, and J. Yang, Metal oxide semiconductor heterostructure
field effect transistor US States 6,690,042 February 10 (2004) Patents Allowed M. A. Khan,
R. Gaska, M. S. Shur, and J. Yang, Method of producing nitride-based
heterostructure devices, US Patent Application Publication, Pub No.: US
2002/0058349 A1, Pub. Date May 16, 2002 Patent Application Published H. Chen, M.
S. Shur, and T. A. Fjeldly, Conducting remote instructor-controlled
experimentation, US Patent Application Publication, Pub No.: 2003/0207243 A1,
Pub. Date Nov. 6, 2003 |
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Invention, modeling, and experimental
demonstration of heterodimensional devices (1991-98). These devices
utilize Schottky barriers or p-n junctions between a 3d metal or
semiconductor and two or one-dimensional electron or hole gas. The demonstrated
devices include a novel 2d-3d Schottky diode (which was used as a multiplier
up to 225 GHz), a novel Resonant Tunneling Transistor (RTT) with the highest
transconductance for Schottky Gated RTTs, and 2d MESFET which is promising
for applications in ultra-low power integrated circuits. The theoretically
studied devices include a novel Lateral Ridge Heterostructure Semiconductor
Laser. Key original papers include: B. Gelmont and M. S. Shur, Low Threshold
Laser Utilizing Junction Between Two-Dimensional Electron Gas and p-type
Semiconductor, in Proceeding of The First International Semiconductor Device
Research Symposium, pp. 193-196, Charlottesville, VA, Dec. (1991) B. Gelmont, M. S. Shur, and C. Moglestue,
Theory of Junction between Two-Dimensional Electron Gas and p-type
Semiconductor, IEEE Trans. Electron Devices, ED-39, No. 52, pp. 1216-1222,
May (1992) W. Peatman, T. Crowe, M. S. Shur, and B.
Gelmont, A Schottky/2-DEG Varactor Diode for Millimeter and Submillimeter
Wave Multiple Applications, Proc. 3rd International. Conf. Space THz Tech.,
University of Michigan, Ann Arbor, Michigan, pp. 93-109, May 1992 W. C. B. Peatman, T. W. Crowe, and M. S.
Shur, A Novel Schottky/2-DEG Diode for Millimeter and Submillimeter Wave
Multiplier Applications, IEEE Electron Device Letters, vol. 13, No. 1, pp.
11-13, Jan. (1992) B. Gelmont, W. Peatman, M. S. Shur,
Heterodimensional Schottky Metal-Two Dimensional Electron Gas Interfaces, J.
Vac. Sci. Technol. B11 (4), pp. 1670-1674, July/August (1993) G. L. Tan, J. M. Xu, and M. S. Shur, A
GaAs/AlGaAs Double-Heterojunction Lateral PIN Ridge Waveguide Laser, Optical
Engineering, 32, No. 9, pp. 2042-2045, 1993 (Invited) W. C. B. Peatman, H. Park, and M. S. Shur,
Novel Two-Dimensional Metal-Semiconductor Field Effect Transistor (2-D
MESFET) for Ultra Low Power Circuit Applications, IEEE Electron Device
Letters, vol. 15, No. 7, pp. 245-247, July (1994) W. C. B. Peatman, H. Park, B. Gelmont, M.
S. Shur, P. Maki, E. R. Brown, and M. J. Rooks, Novel Resonant Tunneling
Transistor with High Transconductance at Room Temperature, IEEE Electron
Device Letters, vol. 15, No. 7, pp. 236-238, July (1994) W. C. B. Peatman, M. Hurt, H. Park, R.
Tsai, and M. S. Shur, Narrow Channel 2-D MESFET for Low Power Electronics,
IEEE Trans. Electron Devices, 42, September (1995) M. J. Hurt, W. C. B. Peatman, R. Tsai, T.
Ytterdal, M. S. Shur, and B. J. Moon, An Ion-Implanted 0.4 µm Wide 2-D MESFET
for Low Power Electronics, Electronics Letters, vol. 32, No. 8, pp. 772-773,
11 April 1996 Ytterdal, M. Hurt, M. S. Shur, H. Park, R.
Tsai, and W. C. B. Peatman, High-Temperature Characteristics of
Two-Dimensional MESFETs, IEEE Electron Device Lett., vol. 17, No. 5, May, pp.
214-216 (1996) W. C. B. Peatman, R. Tsai, T. Ytterdal, M.
Hurt, H. Park, J. Gonzales, and M. S. Shur, Sub-half-micron Width 2-D MESFET,
IEEE Electron Device Lett., vol. 17, No. 2, pp. 40-42, Feb. (1996) J. Robertson, T. Ytterdal, W. C. B.
Peatman, R. Tsai, E. Brown, and M. S. Shur, RTD/2-D MESFET/RTD Logic Elements
for Compact, Ultra Low-Power Electronics, IEEE Trans. Electron Devices, 44,
N0. 7, pp. 1033-1039 (1997) Ballistic Transport and "Shallow Water"
Waves in Semiconductor Devices (1976-99) This work started
from the theory of the collisionless transport in n+-n-n+
structures (which first introduced the term "ballistic transport"
and predicted instability in this mode of transport. More recently, Dyakonov
and Shur applied the concept of the ballistic transport to Heterostructure
Field Effect Transistors (HFETs). They showed that in HFETs, ballistic
electrons should behave as shallow water. This electron fluid should be
unstable toward the generation of surface plasmons that are similar to
shallow water waves. This new instability is now referred to in technical
literature as "Dyakonov-Shur instability". This new mechanism may
be used for the generation, detection, and mixing of far infrared radiation
by submicron HFETs. The "choking" of the electronic fluid cause the
current saturation. A new family of the electronic devices includes "an
electronic flute" and a new detector, which has been recently
successfully fabricated. Key original papers include: M. S. Shur, Influence of Non-Uniform Field
Distribution in the Channel on the Frequency Performance of GaAs FETs,
Electronics Letters, 12, No. 23, pp. 615-616 (1976) M. S. Shur and L. F. Eastman, Ballistic
Transport in Semiconductors at Low-Temperatures for Low Power High Speed
Logic, IEEE Transactions Electron Devices, vol. ED-26, No. 11, pp. 1677-1683,
November (1979) M. S. Shur, Ballistic and Collision
Dominant Transport in a Short Semiconductor Diode, Proceedings of IEDM, pp.
618-621, Washington, DC (1980) M. S. Shur, Ballistic Transport in
Semiconductor with Collisions, IEEE Trans. Electron. Devices, vol. ED-28, No.
10, pp. 1120-1130, October (1981) M. Dyakonov and M. S. Shur, Shallow Water
Analogy for a Ballistic Field Effect Transistor. New Mechanism of Plasma Wave
Generation by DC Current, Phys. Rev. Lett., vol. 71, No. 15, pp. 2465-2468,
Oct. 11 (1993) M. Dyakonov and M. S. Shur, Ballistic FET
as Tunable Terahertz Oscillator, in Proceedings of 2d International
Semiconductor Device Research Symposium, Charlottesville, VA, December, pp.
741-744 (1993) M. Dyakonov and M. S. Shur, New
Hydrodynamic Phenomena in Electronic Fluid, in Proceedings of 22d
International Conference on Physics of Semiconductors, M. Dyakonov and M. S. Shur, Choking of
Electron Flow - A Mechanism of Current Saturation in Field Effect
Transistors, Phys. Rev. B, vol. 51, No. 20, pp. 14341-14345, 15 May (1995) M. I. Dyakonov and M. S. Shur, Two
Dimensional Electronic Flute, Applied Physics Letters, Vol. 67 (8), August
21, pp. 1137-1139, 1995 M. I. Dyakonov and M. S. Shur, Detection,
Mixing, and Frequency Multiplication of Terahertz Radiation by Two
Dimensional Electronic Fluid, IEEE Transactions on Electron Devices, vol. 43,
No. 3, pp. 380-387, March (1996) M. I. Dyakonov and M. S. Shur, Plasma Wave
Electronics: Novel Terahertz Devices using Two Dimensional Electron Fluid, Special
Issue on Future Directions in Device Science and Technologies, IEEE
Transactions on Electron Devices, vol. 43, No. 10, pp. 1640-1646, October
(1996) M. Dyakonov and M. S. Shur. Ballistic
Transport in High Mobility Semiconductor, The Physics of Semiconductors ed.
by M. Scheffler and R. Zimmermann (World Scientific, Singapore 1996), pp.
145-148, (1996) R. Weikle, J. Lu, M. S. Shur, M. I.
Dyakonov, Detection of Microwave Radiation by Electronic Fluid in High
Electron mobility Transistors, Electronics Letters, vol. 32, No. 7, pp.
2148-2149 (1996) Semiconductor Device and Circuit Modeling for VLSI
(1976-99) This work
included new device and circuit models GaAs FETs, HFETs, HBTs, and a-Si TFTs.
More recently, Shur and co-workers developed a new approach to the FET theory
called the Unified Charge Control Model and applied this approach to develop
a deep submicron circuit simulator called AIM-Spice (successful in the
simulation and parameter extraction for 0.09 micron Si MOSFETs). Along with
many technical papers, the key original publications include two
monographs and several book chapters: M. S. Shur, GaAs Devices and Circuits
(book), Plenum Publishing Corporation, M. S. Shur, Modeling of GaAs and
AlGaAs/GaAs Field Effect Transistors, in Introduction to GaAs Technology, J.
Wiley, New York, ed. C. T. Wang (1990), pp. 27-97 M. S. Shur and T. A. Fjeldly, HEMT
Modeling, in Semiconductor Device Modeling, C. Snowden and Milnes, Editors,
Springer Verlag, London (1993), pp. 56-73 K. Lee, M. S. Shur, T. A. Fjeldly, and T.
Ytterdal, Semiconductor Device Modeling for VLSI, Prentice Hall, Englewood
Cliffs, NJ (1993) T. A. Fjeldly, Michael S. Shur and T.
Ytterdal, Device Modeling Issues in Deep-Submicron MOSFETs, Semiconductor
International, pp. 131-142 June (1996) Heterostructure Transistors and Integrated Circuits
(1969-1999) In 1969,
Levinshtein and Shur proposed a saturated (ungated FET) load. In 1980s,
jointly with a team of Honeywell engineers, Shur demonstrated the first GaAs
gate array (which received an IR-100 award) the first delta-doped HFET (this
work was also joint with Professor Eastman's group), the first complementary
HIGFET technology (later, it achieved both speed and integration scale
records -- VLSI complexity), and the highest transconductance in any FET
achieved at that time. Xu and Shur invented the Tunneling HBT (later
demonstrated excellent performance by many different groups around the
world). Shur was first to propose and observe the hot electron (CHINT-like)
regime in HFETs. Jointly with GE engineers, Shur reported on the record
cutoff frequency in HFETs in 1989. Also, in 1989, Shur invented new
high-speed FETs - M. E. Levinshtein and M. S. Shur, Current
Stabilizer on Gunn Diode, Fiz. Tekh. Poluprov., 3, No. 7, pp. 1085-1087
(1969) (in Russian). English translation in Soviet Phys. Semicond., 3, No. 7
(1969) L. F. Eastman and M. S. Shur, Substrate
Current in GaAs MESFET's, IEEE Transactions Electron Devices, vol. ED-26, No.
9, pp. 1359-61, September (1979) T. Vu, P. Roberts, R. Nelson, G. Lee, B.
Hanzai, K. Lee, D. Lamb, M. Helix, S. Jamison, S. Hanka, J. Brown, and M. S.
Shur, A 432-cell GaAs Gate Array with on Chip 64-bit RAM, in Proceedings of
IEEE Custom IC Conference, Rochester NY, p. 32-6, May (1983) N. C. Cirillo, A. Fraasch, H. Lee, L. F.
Eastman, M. S. Shur, and S. Baier, Novel Multilayer Modulation Doped
(Al,Ga)As/GaAs Structures for Self-aligned Gate FETs, Electronics Letters,
vol. 20, No. 21, pp. 854-855, October (1984) N. C. Cirillo, M. S. Shur, P. J. Vold, J.
K. Abrokwah, R. R. Daniels, and O. N. Tufte, Complementary Heterostructure
Insulated Gate Field Effect Transistors (HIGFETs), IEDM Technical Digest, pp.
317-320 (1985), Washington DC N. C. Cirillo, M. S. Shur, and J. K.
Abrokwah, Inverted GaAs/AlGaAs Modulation Doped Transistors with Extremely
High Transconductances, IEEE Electron Device Letters, vol. EDL-7, No. 2, pp.
71-74, February (1986) J. Xu and M. S. Shur, A Tunneling Emitter
Bipolar Junction Transistor, IEEE Electron Device Letters, vol. EDL-6, No. 7,
pp. 416-418 (1986) N. C. Cirillo, J. K. Abrokwah, and M. S.
Shur, Self-aligned Modulation Doped (Al,Ga)As/GaAs Field-effect Transistor,
IEEE Electron Device Lett., vol. EDL-5, No. 4, pp. 129-131, April (1984) M. S. Shur, D. K. Arch, R. R. Daniels, and
J. K. Abrokwah, New Negative Resistance Regime of Heterostructure Insulated
Gate Transistor (HIGFET) Operation, IEEE Electron Device Letters, vol. EDL-7,
No. 2, pp. 78-80, February (1986) J. Xu and M. S. Shur, Tunneling Emitter
Bipolar Transistor, US Patent # 4,845,541, July 4 (1989) P. C. Chao, M. S. Shur, , R. C. Tiberio, K.
H. G. Duh, P. M. Smith, J. M. Ballingall, P. Ho, and A. A. Jabra, DC and
Microwave Characteristics of Sub-0.1µm gate-length planar-doped pseudomorphic
HEMTs, IEEE Trans. Electron Dev., ED-36, No. 3, pp. 461-473, March (1989) M. S. Shur, Split-gate Field Effect
Transistor, Appl. Phys. Lett., 54 (2), pp. 162-164, Jan. 9 (1989) A. A. Akinwande, J. Zou, M. S. Shur, and A.
J. Xu and M. S. Shur, Double Base Hot
Electron Transistor, United States Patent #4,901,122, February 13 (1990) K. Lee and M. S. Shur,
π-Heterostructure Field Effect Transistors for VLSI applications, IEEE
Transactions Electron Devices, vol. 37, No. 8, pp. 1810-1820, Aug. (1990) M. S. Shur and K. Lee, Field-Effect Compound
Semiconductive Transistor with GaAs gate to increase barrier height and
reduce turn-on voltage, US Patent # 5,161,235, Nov. 3 (1992) E. Martinez, M. S. Shur, and F. L.
Schuermeyer, Heterostructure Field Effect Transistors Operated in Hot
Electron Regime, IEEE Trans. Electron Devices, vol. 41, No. 5, pp. 854-856
(1994) a-Si and poly-Si devices and integrated circuits
(1978-1999). Jointly with ECD
group, Shur developed record efficiency a-Si solar cells (in 1980s), invented
and demonstrated a new bipolar a-Si Thin Film Transistor called DIFET.
Jointly with Xerox PARC and his students and post-docs, Shur developed the
first SPICE model for a-Si TFT, invented and demonstrated a new vertical a-Si
TFT, and proposed and implemented a new characterization technique for a-Si
TFTs. Key original papers include: M. S. Shur, A. Madan, and M. Hack, M. S. Shur, W. Czubatyj, Double
Injection Solid State Transistor - A new solid state device, Appl. Phys.
Lett., vol. 48, (20), pp. 1386-1388, May (1986) M. S. Shur, C. Hyun, and M. Hack, New High
Mobility Regimes of Operation of Amorphous Silicon Alloys FETs, J. Appl.
Phys., vol. 59, No. 7, pp. 2488-2497, April (1986) M. Hack, M. S. Shur, and J. G. Shaw,
Physical Models for Amorphous Silicon Thin Film Transistors and Their
Implementation in a Circuit Simulation program, IEEE Transactions Electron
Devices, ED-36, No. 12, pp. 2764-2769 (1989) M. Hack, J. G. Shaw and M. S. Shur, High
Current Thin Film Transistor, Patent 4,990,977, Feb. 26 (1991)) T. Globus, M. S. Shur, Y. Byun, and M.
Hack, New Split FET Technique for Measurements of Source Series Resistance
Applied to Amorphous Silicon Thin Film Transistors, IEEE Electron Device
Letters, vol. 13, No. 2, pp. 108-110, February (1992) M. S. Shur, M. D. Jacunsky, H. Slade, and
M. Hack , Analytical Models for Amorphous-Silicon and Polysilicon Thin-Film
Transistors for High Definition Display Technology, in Journ. Society for
Information Display, vol. 3, No. 4, pp. 223-236, Dec. (1995) Wide Band Gap Semiconductor Devices (1989-1999). Jointly with the
NRL and CREE Research groups, Shur demonstrated a and b SiC transistor with a
record transconductances (in 1989 and 1991), demonstrated high temperature
operation of SiC transistors, and invented a new type of high speed SiC FET.
Jointly with APA Optics, Shur recently demonstrated the record microwave
AlGaN/GaN HFET based on novel Doped Channel concept. Shur and co-workers
proposed a new characterization technique for wide band gap heterostructure
layers and demonstrated that piezoelectric properties play a dominant role in
these devices. Shur also contributed to the development of novel GaN-based
LEDs and photodetectors. Key original papers include: G. Kelner, M. S. Shur, S. Binari, K.
Sleger, and H. S. Kong, High-Transconductance b-SiC Buried-Gate JFET's, IEEE
Trans. Electron Devices, ED-36, No. 6, pp. 1045-1049 (1989)) G. Kelner, S. Binari, M. S. Shur, K.
Sleger, J. Palmer, and H. Kong, High Temperature Performance of a-SiC Buried
Gate Junction Field-Effect Transistors, Electronics Letters, vol. 27, No. 12,
pp. 1038-1040, July (1991) R. F. Davis, G. Kelner, M. S. Shur, J. W.
Palmour, and J. A. Edmond, Thin Film Deposition and Microelectronic and
Optoelectronic Device Fabrication and Characterization in Monocrystalline
Alpha and Beta Silicon Carbide, Proc. of IEEE, 79, No. 5, pp. 677-701, May
(1991) | ||
