ECSE-6290 – Semiconductor Devices and Models II
Instructor: Michael Shur E-mail: shurm@rpi.edu Home page: http://nina.ecse.rpi.edu/shur/	Subject Description Grading Required Textbook Software Prerequisites by topics Detailed Course Description Live Schedule SDM-2 Homepage
Subject Description The principle of operation, device physics, and analytical numerical, and circuit device models for semiconductor devices, such as bipolar junction transistors, metal-semiconductor junctions and transistors, heterostructure junctions and transistors. Selected advanced semiconductor devices, such as novel microwave devices, are also introduced. Prerequisite: SDM-I or equivalent. Back to the top	Grading: Homework 50% Final Project 50% Back to the top
Software AIM-Spice (please download from www.aimspice.com) Back to the top	Prerequisites by Topics Basic knowledge of semiconductor devices or SDM I or equivalent Back to the top

Michael Shur shurm@rpi.edu

Text: Michael Shur “Introduction to Electronic Devices”

Detailed course Description. ECSE-6290 – Semiconductor Devices and Models II

1. Introduction and review.

Course goals, outline, and policies

Semiconductor materials

Basic semiconductor equations

Device building blocks: Schottky, ohmic contacts, p-n junctions

Reading Assignments: Chapters 1 and 2. Sections 3-1 to 3-4.

2. Bipolar Junction Transistor.

The principle of operation

Device physics

High injection effects

Modes of operation

Current, voltage, and power gains

Input and output impedances

3. Bipolar Junction Transistor modeling

Ebers-Moll model

Gummel-Poon model

BJT models in SPICE

BJT parameter extraction

BJT breakdown

4. High Frequency Performance

s-parameters

cutoff frequency and maximum frequency of oscillations

Microwave BJTs

Microwave amplifiers

Reading Assignments: Sections 4-1 to 4-3.

5. BiCMOS

FET versus BJT

CMOS

BiCMOS technology

6. Heterostructure Bipolar Transistors

Principle of operation

Materials systems

HBT designs

State-of-the art performance

HBT modeling

HBT models in SPICE

Reading Assignments: Section 4-4 and notes.

7. BJT and HBT fabrication

Designs

Packaging

Interconnects

Passive components

8. Metal Semiconductor Field Effect Transistors

Principle of operation

Materials systems

MESFET designs

State-of-the art performance

MESFET modeling

MESFET models in SPICE

MESFETs and MMICs

Reading Assignments: Sections 5-1 to 5-4.

9. Heterostructure Field Effect Transistors

Principle of operation

Materials systems

HFET designs

State-of-the art performance

HFET modeling

HFET models in SPICE

Reading Assignments: Section 5-5 and notes.

10. Wide band Gap Technology

Wide band gap materials and devices

Pyroelectric semiconductors

GaN HFETs

GaN MESFETs

GaN FET Stability

SiC MESFETs

11. Solid State Lighting

12. Amplifier characteristics: gain, noise, stability,

dynamic range.

Basics of amplifier design.

Low noise amplifiers.

Power amplifiers.

Power combining.

MMICs and Millimeter-Wave Monolithic ICs.

Optical control of microwave devices.

Review of state-of-the art.

Si and Si-Ge competition.

Applications in systems.

13. Summary: High Speed Transistors.

Power-delay chart

Power-frequency chart

Basic limits

Course Review. Questions and answers

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Live Schedule

Lecture	Viewgraphs	Topic	Homework Assignments
1,2	1, 2	1. Introduction and review. Course goals and outline Semiconductor materials
3,4	3,4,5	Semiconductor materials Basic semiconductor equations Device building blocks: Schottky, ohmic contacts, p-n junctions
5,6	6, 7	2. Bipolar Junction Transistor. The principle of operation Device physics	Hw 1 assigned
7,8	8	High injection effects Modes of operation Current, voltage, and power gains Input and output impedances	Topics for final projects selected
9,10	9, 10	3. Bipolar Junction Transistor modeling Ebers-Moll model Gummel-Poon model BJT models in SPICE BJT parameter extraction BJT breakdown	Hw 1 is due, Hw 2 assigned
11,12	11, 12, 13	4. High Frequency Performance s-parameters fT and fmax Microwave BJTs Microwave amplifiers 5. BiCMOS FET versus BJT CMOS BiCMOS technology	Hw 2 is due; Hw 3 is assigned
13,14	14, 15, 16	6. Heterostructure Bipolar Transistors Principle of operation Materials systems HBT designs State-of-the art performance HBT modeling HBT models in SPICE 7. BJT and HBT fabrication Designs Packaging Interconnects Passive components
15,16	17, 18	8. Metal Semiconductor Field Effect Transistors Principle of operation Materials systems MESFET designs State-of-the art performance MESFET modeling MESFET models in SPICE MESFETs and MMICs 9. Heterostructure Field Effect Transistors Principle of operation Materials systems HFET designs State-of-the art performance HFET modeling HFET models in SPICE	Midterm presentations and discussions Hw 3 is due; Hw 4 is assigned
17,18	19, 20, 21, 22, 23, 24	10. Wide band Gap Technology Wide band gap materials and devices Pyroelectric semiconductors GaN HFETs GaN MESFETs GaN FET Stability SiC MESFETs
19,20	25	11. Solid State Lighting
21,22	26, 27, 28	12. Amplifier characteristics: gain, noise, stability, dynamic range. Basics of amplifier design. Low noise amplifiers. Power amplifiers. Power combining. MMICs and Millimeter-Wave Monolithic ICs. Optical control of microwave devices. Review of state-of-the art. Si and Si-Ge competition. Applications in systems. 12. Summary: High Speed Transistors. Power-delay chart Power-frequency chart Basic limits	Hw 4 is due; Hw 5 is assigned
23,24		Course Review. Questions and answers
25,26		Final presentations	Hw 5 is due
27,28		Final presentations

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